中国物理B ›› 2012, Vol. 21 ›› Issue (5): 58504-058504.doi: 10.1088/1674-1056/21/5/058504

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Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

陈峻1 2,范广涵1,张运炎3,庞玮2,郑树文1,姚光锐1   

  1. 1. Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
    2. Experimental Teaching Center, Guangdong University of Technology, Guangzhou 510006, China;
    3. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
  • 收稿日期:2011-08-14 修回日期:2012-04-27 出版日期:2012-04-01 发布日期:2012-04-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176043), the Fund for Strategic and Emerging Industries of Guangdong Province, China (Grant No. 2010A081002005), and the Project of Combination of Production and Research of the Education Ministry and Guangdong Province, China (Grant No. 2010B090400192).

Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

Chen Jun(陈峻)a)b), Fan Guang-Han(范广涵)a)†, Zhang Yun-Yan(张运炎)c), Pang Wei(庞玮)b), Zheng Shu-Wen(郑树文)a), and Yao Guang-Rui(姚光锐)a)   

  1. a. Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
    b. Experimental Teaching Center, Guangdong University of Technology, Guangzhou 510006, China;
    c. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
  • Received:2011-08-14 Revised:2012-04-27 Online:2012-04-01 Published:2012-04-01
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176043), the Fund for Strategic and Emerging Industries of Guangdong Province, China (Grant No. 2010A081002005), and the Project of Combination of Production and Research of the Education Ministry and Guangdong Province, China (Grant No. 2010B090400192).

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摘要： The performance of InGaN blue light-emitting diodes (LEDs) with different kinds of electron-blocking layers is investigated numerically. We compare the simulated emission spectra, electron and hole concentrations, energy band diagrams, electrostatic fields, and internal quantum efficiencies of the LEDs. The LED using AlGaN with gradually increasing Al content from 0% to 20% as the electron-blocking layer (EBL) has a strong spectrum intensity, mitigates efficiency droop, and possesses higher output power compared with the LEDs with the other three types of EBLs. These advantages could be because of the lower electron leakage current and more effective hole injection. The optical performance of the specifically designed LED is also improved in the case of large injection current.

关键词: electron-blocking layer, light-emitting diode, internal quantum efficiency

Abstract: The performance of InGaN blue light-emitting diodes (LEDs) with different kinds of electron-blocking layers is investigated numerically. We compare the simulated emission spectra, electron and hole concentrations, energy band diagrams, electrostatic fields, and internal quantum efficiencies of the LEDs. The LED using AlGaN with gradually increasing Al content from 0% to 20% as the electron-blocking layer (EBL) has a strong spectrum intensity, mitigates efficiency droop, and possesses higher output power compared with the LEDs with the other three types of EBLs. These advantages could be because of the lower electron leakage current and more effective hole injection. The optical performance of the specifically designed LED is also improved in the case of large injection current.

Key words: electron-blocking layer, light-emitting diode, internal quantum efficiency

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
85.50.-n (Dielectric, ferroelectric, and piezoelectric devices) 87.15.A- (Theory, modeling, and computer simulation) 78.60.Fi (Electroluminescence)