The effects of post-thermal annealing on the optical parameters of indium-doped ZnO thin films

doi:10.1088/1674-1056/21/4/047305

中国物理B ›› 2012, Vol. 21 ›› Issue (4): 47305-047305.doi: 10.1088/1674-1056/21/4/047305

彭丽萍¹ ²,方亮²,吴卫东¹,王雪敏¹,李丽³

收稿日期:2011-06-05 修回日期:2011-08-10 出版日期:2012-02-29 发布日期:2012-02-29
通讯作者: 彭丽萍,pengliping2005@yahoo.cn;方亮,fangliangcqu@yahoo.com.cn E-mail:pengliping2005@yahoo.cn;fangliangcqu@yahoo.com.cn

The effects of post-thermal annealing on the optical parameters of indium-doped ZnO thin films

Peng Li-Ping(彭丽萍)^a)b)†, Fang Liang(方亮)^b)‡, Wu Wei-Dong(吴卫东)^a), Wang Xue-Min(王雪敏)^a), and Li Li(李丽)^c)

a. Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China;
b. Department of Applied Physics, Chongqing University, Chongqing 400030, China;
c. College of Mathematics and Physics, Chongqing University of Posts and Telecommunications, Chongqing 400065, China

Received:2011-06-05 Revised:2011-08-10 Online:2012-02-29 Published:2012-02-29
Contact: Peng Li-Ping,pengliping2005@yahoo.cn;Fang Liang,fangliangcqu@yahoo.com.cn E-mail:pengliping2005@yahoo.cn;fangliangcqu@yahoo.com.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 50942021 and 11075314) and the Fundamental Research Fund for the Central Universities (Grant No. CDJXS10102207).

摘要/Abstract

Abstract: Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400 ℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400 ℃ to 800 ℃. The band gap of the as-deposited ZnO:In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400 ℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400 ℃ to 800 ℃.

Key words: ZnO thin films, optical constants, annealing, transmittance spectra

中图分类号: (II-VI semiconductors)

73.61.Ga

81.15.Cd (Deposition by sputtering) 68.55.ag (Semiconductors)

彭丽萍, 方亮, 吴卫东, 王雪敏, 李丽. [J]. 中国物理B, 2012, 21(4): 47305-047305.

Peng Li-Ping(彭丽萍), Fang Liang(方亮), Wu Wei-Dong(吴卫东), Wang Xue-Min(王雪敏), and Li Li(李丽) . The effects of post-thermal annealing on the optical parameters of indium-doped ZnO thin films[J]. Chin. Phys. B, 2012, 21(4): 47305-047305.

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The effects of post-thermal annealing on the optical parameters of indium-doped ZnO thin films

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