中国物理B ›› 2011, Vol. 20 ›› Issue (5): 56101-056101.doi: 10.1088/1674-1056/20/5/056101

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Unidirectional expansion of lattice parameters in GaN induced by ion implantation

法涛, 李琳, 姚淑德, 吴名枋, 周生强   

  1. State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2010-10-24 修回日期:2010-12-16 出版日期:2011-05-15 发布日期:2011-05-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11005005), the National Basic Research Program of China (Grant No. 2010CB832904), and the Bilateral Cooperation between China and Flanders (Grant No. BIL 02-02).

Unidirectional expansion of lattice parameters in GaN induced by ion implantation

Fa Tao (法涛), Li Lin (李琳), Yao Shu-De (姚淑德), Wu Ming-Fang (吴名枋), Zhou Sheng-Qiang (周生强)   

  1. State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, China
  • Received:2010-10-24 Revised:2010-12-16 Online:2011-05-15 Published:2011-05-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11005005), the National Basic Research Program of China (Grant No. 2010CB832904), and the Bilateral Cooperation between China and Flanders (Grant No. BIL 02-02).

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摘要： This paper reports that the 150-keV Mn ions are implanted into GaN thin film grown on Al2O3 by metal–organic chemical vapour deposition. The X-ray diffraction reciprocal spacing mapping is applied to study the lattice parameter variation upon implantation and post-annealing. After implantation, a significant expansion is observed in the perpendicular direction. The lattice strain in perpendicular direction strongly depends on ion fluence and implantation geometry and can be partially relaxed by post-annealing. While in the parallel direction, the lattice parameter approximately keeps the same as the unimplanted GaN, which is independent of ion fluence, implantation geometry and post-annealing temperature.

Abstract: This paper reports that the 150-keV Mn ions are implanted into GaN thin film grown on Al2O3 by metal–organic chemical vapour deposition. The X-ray diffraction reciprocal spacing mapping is applied to study the lattice parameter variation upon implantation and post-annealing. After implantation, a significant expansion is observed in the perpendicular direction. The lattice strain in perpendicular direction strongly depends on ion fluence and implantation geometry and can be partially relaxed by post-annealing. While in the parallel direction, the lattice parameter approximately keeps the same as the unimplanted GaN, which is independent of ion fluence, implantation geometry and post-annealing temperature.

Key words: GaN, ion implantation, unidirectional strain, X-ray reciprocal space mapping

中图分类号:  (X-ray diffraction)

  • 61.05.cp
61.80.Jh (Ion radiation effects) 61.72.uj (III-V and II-VI semiconductors) 82.80.Yc (Rutherford backscattering (RBS), and other methods ofchemical analysis)