Gap opening and tuning in single-layer graphene with combined electric and magnetic field modulation

doi:10.1088/1674-1056/20/4/047302

中国物理B ›› 2011, Vol. 20 ›› Issue (4): 47302-047302.doi: 10.1088/1674-1056/20/4/047302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Gap opening and tuning in single-layer graphene with combined electric and magnetic field modulation

林鑫, 王海龙, 潘晖, 许怀哲

Department of Physics, Beihang University, Beijing 100191, China

收稿日期:2010-12-09 修回日期:2011-01-08 出版日期:2011-04-15 发布日期:2011-04-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60776067 and 10974011).

Gap opening and tuning in single-layer graphene with combined electric and magnetic field modulation

Lin Xin(林鑫), Wang Hai-Long(王海龙), Pan Hui(潘晖), and Xu Huai-Zhe(许怀哲)^†

Department of Physics, Beihang University, Beijing 100191, China

Received:2010-12-09 Revised:2011-01-08 Online:2011-04-15 Published:2011-04-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60776067 and 10974011).

摘要/Abstract

摘要： The energy band structure of single-layer graphene under one-dimensional electric and magnetic field modulation is theoretically investigated. The criterion for bandgap opening at the Dirac point is analytically derived with a two-fold degeneracy second-order perturbation method. It is shown that a direct or an indirect bandgap semiconductor could be realized in a single-layer graphene under some specific configurations of the electric and magnetic field arrangement. Due to the bandgap generated in the single-layer graphene, the Klein tunneling observed in pristine graphene is completely suppressed.

Abstract: The energy band structure of single-layer graphene under one-dimensional electric and magnetic field modulation is theoretically investigated. The criterion for bandgap opening at the Dirac point is analytically derived with a two-fold degeneracy second-order perturbation method. It is shown that a direct or an indirect bandgap semiconductor could be realized in a single-layer graphene under some specific configurations of the electric and magnetic field arrangement. Due to the bandgap generated in the single-layer graphene, the Klein tunneling observed in pristine graphene is completely suppressed.

Key words: gap opening at Dirac point, single-layer graphene, electric and magnetic superlattice, second-order perturbation

中图分类号: (Theory and modeling)

73.43.Cd

73.61.Wp (Fullerenes and related materials) 73.50.Bk (General theory, scattering mechanisms)

林鑫, 王海龙, 潘晖, 许怀哲. Gap opening and tuning in single-layer graphene with combined electric and magnetic field modulation[J]. 中国物理B, 2011, 20(4): 47302-047302.

Lin Xin(林鑫), Wang Hai-Long(王海龙), Pan Hui(潘晖), and Xu Huai-Zhe(许怀哲) . Gap opening and tuning in single-layer graphene with combined electric and magnetic field modulation[J]. Chin. Phys. B, 2011, 20(4): 47302-047302.

参考文献 51

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666
[2]	Bolotin K, Sikes K, Jiang Z, Klima M, Fudenberg G, Hone J, Kim P and Stormer H L 2008 Solid State Commun. 146 351
[3]	Neugebauer P, Orlita M, Faugeras C, Barra A L and Potemski M 2009 Phys. Rev. Lett. 103 136403
[4]	Neto H C, Guinea F, Peres N M R, Novoselov K S and Geim A K 2009 Rev. Mod. Phys. 81 109
[5]	Beenakker W J 2008 Rev. Mod. Phys. 80 1337
[6]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V and Firsov A A 2005 Nature 438 197
[7]	Zhang Y, Tan J W, Stormer H L and Kim P 2005 Nature 438 201
[8]	Zhou S Y, Gweon G H, Fedorov A V, First P N, Deheer W A, Lee D H, Guinea F, Castro Neto A H and Lanzara1 A 2007 Nat. Mater. 6 770
[9]	Gusynin V P and Sharapov S G 2005 Phys. Rev. Lett. 95 146801
[10]	Katsnelson M I, Novoselov K S and Geim A K 2006 Nat. Phys. 2 620
[11]	Novoselov K S, Jiang D, Booth T, Khotkevich V V, Morozov S M and Geim A K 2005 Proc. Natl. Acad. Sci. USA 102 10451
[12]	Guinea F, Katsnelson M I and Geim A K 2010 Nat. Phys. 6 30
[13]	Balog R, Jorgensen B, Nilsson1 L, Andersen M, Rienks E, Bianchi M, Fanetti M, Laegsgaard E, Baraldi A, Lizzit S, Sljivancanin Z, Besenbacher F, Hammer B, Pedersen T G, Hofmann P and Hornekaer L 2010 Nat. Mater. 9 315
[14]	Meyer J C, Girit C O, Crommie M F and Zettl A 2008 Appl. Phys. Lett. 92 123110
[15]	Yang J, Dong Q L, Jiang Z T and Zhang J 2010 Chin. Phys. B 19 127104
[16]	Han M Y, Ozyilmaz B, Zhang Y and Kim P 2007 Phys. Rev. Lett. 98 206805
[17]	Zhang L J and Xia T S 2010 Chin. Phys. B 19 117105
[18]	Son Y W, Cohen M L and Louie S G 2006 Phys. Rev. Lett. 97 216803
[19]	Pedersen T G, Flindt C, Pedersen J, Mortensen N A, Jauho A P and Pedersen K 2008 Phys. Rev. Lett. 100 136804
[20]	Rotenberg E, Bostwick A, Ohta T, McChesney J L, Seyller T and Horn K 2008 Nat. Mater. 7 258
[21]	Zhou S Y, Siegel D A, Fedorov A V, Gabaly F E, Schmid A K, Castro Neto A H, Lee D H and Lanzara1 A 2008 Nat. Mater. 7 259
[22]	Gerhardts R R, Weiss D and Klitzing K V 1989 Phys. Rev. Lett. 62 1173
[23]	Peeters F M and Matulis A 1993 Phys. Rev. B 48 20
[24]	Matulis A and Peeters F M 1994 Phys. Rev. Lett. 72 1518
[25]	Messica A, Soibel A, Meirav U, Stern A, Shtrikman H, Umansky V and Mahalu D 1997 Phys. Rev. Lett. 78 705
[26]	Kato M, Endo A, Katsumoto S and Iye Y 1998 Phys. Rev. B 58 4876
[27]	Zhai F and Chang K 2008 Phys. Rev. B 77 113409
[28]	Masir M R, Vasiopoulos P and Peeters F M 2009 Phys. Rev. B 79 035409
[29]	Huard B, Sulpizio J A, Stander N, Todd K, Yang B and Goldhaber-Gordon D 2007 Phys. Rev. Lett. 98 236803
[30]	Williams J R, Carlo L Di and Marcus C M 2007 Science 317 638
[31]	Haugen H, Huertas-Hernando D and Brataas A 2008 Phys. Rev. B 77 115406
[32]	Lin X, Pan H and Xu H Z 2010 Commun. Theor. Phys. 54 1134
[33]	Park C H, Yang L, Son Y W, Cohen M L and Louie S G 2008 Nat. Phys. 4 213
[34]	Park C H, Yang L, Son Y W, Cohen M L and Louie S G 2008 Phys. Rev. Lett. 101 126804
[35]	Park C H, Son Y W, Yang L, Cohen M L and Louie S G 2008 Nano Lett. 8 2920
[36]	Brey L and Fertig H A 2009 Phys. Rev. Lett. 103 046809
[37]	Barbier M, Vasiopoulos P and Peeters F M 2010 Phli. Trans. R. Soc. A 368 5499
[38]	Park C H, Son Y W, Yang L, Cohen M L and Louie S G 2009 Phys. Rev. Lett. 103 046808
[39]	Barbier M, Vasiopoulos P and Peeters F M 2009 Phys. Rev. B 80 205415
[40]	Barbier M, Peeters F M, Vasiopoulos P and Pereira J M 2008 Phys. Rev. B 77 115446
[41]	Wang L G and Zhu S Y 2010 Phys. Rev. B 81 205444
[42]	Park C H, Tan L Z and Louie S G 2011 Physica E 43 651
[43]	Masir M R, Vasiopoulos P and Peeters F M 2009 New J. Phys. 11 095009
[44]	Masir M R, Vasiopoulos P, Matulis A and Peeters F M 2008 Phys. Rev. B 77 235443
[45]	DeMartino A, Dellánna L and Egger R 2007 Phys. Rev. Lett. 98 066802
[46]	DeMartino A, Dellánna L and Egger R 2009 Phys. Rev. B 79 045420
[47]	Xu L, An J and Gong C D 2010 Phys. Rev. B 81 125424
[48]	Tan L Z, Park C H and Louie S G 2010 Phys. Rev. B 81 195426
[49]	Snyman I 2009 Phys. Rev. B 80 054303
[50]	Barbier M, Vasiopoulos P and Peeters F M 2010 J. Phys.: Condens. Matter 22 465302
[51]	Meyer J C, Girit C O, Crommie M F and Zettl A 2008 Appl. Phys. Lett. 92 123110 endfootnotesize

Gap opening and tuning in single-layer graphene with combined electric and magnetic field modulation

Gap opening and tuning in single-layer graphene with combined electric and magnetic field modulation

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 51

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Yuan Gao(高源), Huiping Li(李慧平), and Wenguang Zhu(朱文光). Prediction of quantum anomalous Hall effect in CrI₃/ScCl₂ bilayer heterostructure[J]. 中国物理B, 2022, 31(10): 107304-107304.
[2]	Guo-Bao Zhu(朱国宝), Hui-Min Yang(杨慧敏), and Jie Yang(杨杰). Longitudinal conductivity in ABC-stacked trilayer graphene under irradiating of linearly polarized light[J]. 中国物理B, 2022, 31(8): 88102-088102.
[3]	Jing Li(李京), Peng Zhu(朱鹏), Yuan-Yuan Sheng(盛圆圆), Lin Liu(刘麟), and Yong Luo(罗勇). Atomistic simulations of the lubricative mechanism of a nano-alkane lubricating film between two layers of Cu-Zn alloy[J]. 中国物理B, 2021, 30(8): 80205-080205.
[4]	. [J]. 中国物理B, 2021, 30(2): 26801-0.
[5]	. [J]. 中国物理B, 2020, 29(12): 127302-.
[6]	Zedong Li(李泽东), Z F Wang(王征飞). [J]. 中国物理B, 2020, 29(10): 107101-.
[7]	康玉娇, 陈元平, 袁加仁, 颜晓红, 谢月娥. Seeing Dirac electrons and heavy fermions in new boron nitride monolayers[J]. 中国物理B, 2020, 29(5): 57303-057303.
[8]	何伊妮, 邓联文, 覃婷, 廖聪维, 罗衡, 黄生祥. Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates[J]. 中国物理B, 2020, 29(4): 47102-047102.
[9]	王夏烘, 李平, 冉召, 罗卫东. Quantum spin Hall insulators in chemically functionalized As (110) and Sb (110) films[J]. 中国物理B, 2018, 27(8): 87305-087305.
[10]	邵楠, 张盛兵, 邵舒渊. A phenomenological memristor model for synaptic memory and learning behaviors[J]. 中国物理B, 2017, 26(11): 118501-118501.
[11]	何敬, 寇谡鹏. Topological hierarchy matters–topological matters with superlattices of defects[J]. 中国物理B, 2016, 25(11): 117310-117310.
[12]	徐昊, 杨红, 罗维春, 徐烨峰, 王艳蓉, 唐波, 王文武, 祁路伟, 李俊峰, 闫江, 朱慧珑, 赵超, 陈大鹏, 叶甜春. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations[J]. 中国物理B, 2016, 25(8): 87305-087305.
[13]	徐昊, 杨红, 王艳蓉, 王文武, 罗维春, 祁路伟, 李俊峰, 赵超, 陈大鹏, 叶甜春. Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation[J]. 中国物理B, 2016, 25(8): 87306-087306.
[14]	刘高斌, 李达,,王健, 刘伟, 张志东. Control of Hall angle of Skyrmion driven by electric current[J]. 中国物理B, 2016, 25(6): 67203-067203.
[15]	刘颖, 何进, 陈文新, 杜彩霞, 叶韵, 赵巍, 吴文, 邓婉玲, 王文平. An analytic model for gate-all-around silicon nanowire tunneling field effect transistors[J]. , 2014, 23(9): 97102-097102.