Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO

doi:10.1088/1674-1056/20/2/027103

中国物理B ›› 2011, Vol. 20 ›› Issue (2): 27103-027103.doi: 10.1088/1674-1056/20/2/027103

Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO

林文雄¹, 翁臻臻², 张健敏³, 黄志高³

(1)Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China; (2)Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China; College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China; (3)School of Physics and OptoElectronics Technology, Fujian Normal University, Fuzhou 350007, China

收稿日期:2010-07-25 修回日期:2010-09-13 出版日期:2011-02-15 发布日期:2011-02-15
基金资助:
Project supported by the National Key Project for Basic Research of China (Grant No. 2005CB623605), the Fund of National Engineering Research Center for Optoelectronic Crystalline Materials (Grant No. 2005DC105003) and the National Natural Science Foundation of China (Grant No. 60876069).

Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO

Weng Zhen-Zhen(翁臻臻)^a)b),Zhang Jian-Min(张健敏)^c), Huang Zhi-Gao(黄志高)^c)^†,and Lin Wen-Xiong(林文雄)^a)^‡

^a Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China; ^b College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China; ^c School of Physics and OptoElectronics Technology, Fujian Normal University, Fuzhou 350007, China

Received:2010-07-25 Revised:2010-09-13 Online:2011-02-15 Published:2011-02-15
Supported by:
Project supported by the National Key Project for Basic Research of China (Grant No. 2005CB623605), the Fund of National Engineering Research Center for Optoelectronic Crystalline Materials (Grant No. 2005DC105003) and the National Natural Science Foundation of China (Grant No. 60876069).

摘要/Abstract

摘要： The influence of oxygen vacancy on the magnetism of Co-doped ZnO has been investigated by the first-principles calculations. It is suggested that oxygen vacancy and its location play crucial roles on the magnetic properties of Co-doped ZnO. The exchange coupling mechanism should account for the magnetism in Co-doped ZnO with oxygen vacancy and the oxygen vacancy is likely to be close to the Co atom. The oxygen vacancy (doping electrons) might be available for carrier mediation but is localized with a certain length and can strengthen the ferromagnetic exchange interaction between Co atoms.

关键词: Co-doped ZnO, oxygen vacancy, ferromagnetism

Abstract: The influence of oxygen vacancy on the magnetism of Co-doped ZnO has been investigated by the first-principles calculations. It is suggested that oxygen vacancy and its location play crucial roles on the magnetic properties of Co-doped ZnO. The exchange coupling mechanism should account for the magnetism in Co-doped ZnO with oxygen vacancy and the oxygen vacancy is likely to be close to the Co atom. The oxygen vacancy (doping electrons) might be available for carrier mediation but is localized with a certain length and can strengthen the ferromagnetic exchange interaction between Co atoms.

Key words: Co-doped ZnO, oxygen vacancy, ferromagnetism

中图分类号: (Density functional theory, local density approximation, gradient and other corrections)

71.15.Mb

71.55.Gs (II-VI semiconductors) 75.50.Pp (Magnetic semiconductors)

翁臻臻, 张健敏, 黄志高, 林文雄. Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO[J]. 中国物理B, 2011, 20(2): 27103-027103.

Weng Zhen-Zhen(翁臻臻), Zhang Jian-Min(张健敏), Huang Zhi-Gao(黄志高), and Lin Wen-Xiong(林文雄) . Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO[J]. Chin. Phys. B, 2011, 20(2): 27103-027103.

参考文献 29

[1]	Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, von Molnar S, Roukes M L, Chtchelkanova A Y and Treger D M 2001 Science bf294 1488
[2]	Dietl T, Ohno H, Matsujura F, Cibert J and Ferand D 2000 Science bf287 1019
[3]	Prellier W, Fouchet A and Mercey B 2003 J. Phys.: Condens. Matter bf15 R1583
[4]	Chambers S A, Droubay T C, Wang C M, Rosso K M, Heald S M, Schwartz D A, Kittilstved K R and Gamelin D R 2006 Mater. Today bf9 28
[5]	Sato K and Katayama-Yoshida H 2000 Jpn. J. Appl. Phys. Part 2 bf39 555
[6]	Bruno P and Sandratskii L M 2006 Phys. Rev. B bf73 045203
[7]	Petit L, Schulthess T C, Svane A, Szotek Z, Temmerman W M and Janotti A 2006 Phys. Rev. B bf73 045107
[8]	Spaldin N A 2004 Phys. Rev. B bf69 125201
[9]	Ueda K, Tabata H and Kawai T 2001 Appl. Phys. Lett. bf79 988
[10]	Janisch R, Gopal P and Spaldin N A 2005 J. Phys.: Condens. Matter bf17 R657
[11]	Jin Z, Fukumura T, Kawasaki M, Ando K, Saito H, Sekiguchi T, Yoo Y Z, Murakami M, Matsumoto Y, Hasegawa T and Koinuma H 2001 Appl. Phys. Lett. bf78 3824
[12]	Jedrecy N, von Bardeleben H J, Zheng Y and Cantin J L 2004 Phys. Rev. B bf69 041308
[13]	Ueda K, Tabata H and Kawai T 2001 Appl. Phys. Lett. bf79 988
[14]	Jaffe J E, Droubay T C and Chambers S A 2005 J. Appl. Phys. bf97 073908
[15]	Huang B, Zhu D and Ma X 2007 Appl. Surf. Sci. bf253 6892
[16]	Hong N H, Sakai J, Huong N T, Poirot N and Ruyter A 2005 Phys. Rev. B bf72 045336
[17]	Manivannan A, Glaspell G, Dutta P and Seehra M S 2005 J. Appl. Phys. bf97 (10) D325
[18]	Hsu H S, Huang J C A, Huang Y H, Liao Y F, Lin M Z, Lee C H, Lee J F, Chen S F, Lai L Y and Liu C P 2006 Appl. Phys. Lett. bf88 242507
[19]	Seghier D and Gislason H P 2009 Physica B bf404 4800
[20]	Bl"ochl P E 1994 Phys. Rev. B bf50 17953
[21]	Kresse G and Hafner J 1993 Phys. Rev. B bf47 558
[22]	Kresse G and Furthm"uller J 1996 Phys. Rev. B bf54 11169
[23]	Wu Q Y, Chen Z G, Wu R Q, Xu G G, Huang Z G, Zhang F M and Du Y W 2007 Solid State Commun. bf142 242
[24]	Xu G G, Wu Q Y, Chen Z G, Huang Z G, Wu R Q and Feng Y P 2008 Phys. Rev. B bf78 115420
[25]	Xu G G, Wu Q Y, Chen Z G, Huang Z G and Feng Y P 2009 J. Appl. Phys. bf106 043708
[26]	Perdew J P and Wang Y 1992 Phys. Rev. B bf45 13244
[27]	Pemmaraju C D, Hanafin R, Archer T, Braun H B and Sanvito S 2008 Phys. Rev. B bf78 054428
[28]	Sluiter M H F, Kawazoe Y, Sharma P, Inoue A, Raju A R, Rout C and Waghmare U V 2005 Phys. Rev. Lett. bf94 187204
[29]	Biegger E, Fonin M, R"udiger U, Janssen N, Beyer M, Thomay T, Bratschitsch R and Dedkov Yu S 2007 J. Appl. Phys. bf101 073904

Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO

Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 29

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Wenyu Xiang(相文雨), Yaping Wang(王亚萍), Weixiao Ji(纪维霄), Wenjie Hou(侯文杰),Shengshi Li(李胜世), and Peiji Wang(王培吉). Prediction of one-dimensional CrN nanostructure as a promising ferromagnetic half-metal[J]. 中国物理B, 2023, 32(3): 37103-037103.
[2]	Ming Yan(闫明), Zhi-Yuan Xie(谢志远), and Miao Gao(高淼). High-temperature ferromagnetism and strong π-conjugation feature in two-dimensional manganese tetranitride[J]. 中国物理B, 2023, 32(3): 37104-037104.
[3]	Yilin Li(李屹林), Hui Zhu(朱慧), Rui Li(李锐), Jie Liu(柳杰), Jinjuan Xiang(项金娟), Na Xie(解娜), Zeng Huang(黄增), Zhixuan Fang(方志轩), Xing Liu(刘行), and Lixing Zhou(周丽星). Wake-up effect in Hf_0.4Zr_0.6O₂ ferroelectric thin-film capacitors under a cycling electric field[J]. 中国物理B, 2022, 31(8): 88502-088502.
[4]	Xiaoting Sun(孙小婷), Yadong Zhang(张亚东), Kunpeng Jia(贾昆鹏), Guoliang Tian(田国良), Jiahan Yu(余嘉晗), Jinjuan Xiang(项金娟), Ruixia Yang(杨瑞霞), Zhenhua Wu(吴振华), and Huaxiang Yin(殷华湘). Improved performance of MoS₂ FET by in situ NH₃ doping in ALD Al₂O₃ dielectric[J]. 中国物理B, 2022, 31(7): 77701-077701.
[5]	Ning Xi(西宁) and Rong Yu(俞榕). Dynamical signatures of the one-dimensional deconfined quantum critical point[J]. 中国物理B, 2022, 31(5): 57501-057501.
[6]	Han Xu(许涵), Tongtong Shang(尚彤彤), Xuefeng Wang(王雪锋), Ang Gao(高昂), and Lin Gu(谷林). Origin of the low formation energy of oxygen vacancies in CeO₂[J]. 中国物理B, 2022, 31(10): 107102-107102.
[7]	Feng-Chun Pan(潘凤春), Xue-Ling Lin(林雪玲), and Xu-Ming Wang(王旭明). Strain-tuned magnetic properties in (Ga,Fe)Sb: First-principles study[J]. 中国物理B, 2021, 30(9): 96105-096105.
[8]	Hongyu Ma(马宏宇), Kewei Liu(刘可为), Zhen Cheng(程祯), Zhiyao Zheng(郑智遥), Yinzhe Liu(刘寅哲), Peixuan Zhang(张培宣), Xing Chen(陈星), Deming Liu(刘德明), Lei Liu(刘雷), and Dezhen Shen(申德振). Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector[J]. 中国物理B, 2021, 30(8): 87303-087303.
[9]	Haitao Zhou(周海涛), Lujia Cong(丛璐佳), Jiangang Ma(马剑钢), Bingsheng Li(李炳生), Haiyang Xu(徐海洋), and Yichun Liu(刘益春). Suppression of persistent photoconductivity in high gain Ga₂O₃ Schottky photodetectors[J]. 中国物理B, 2021, 30(12): 126104-126104.
[10]	Yajing Zhang(张亚婧), Keke Song(宋可可), Shuo Cao(曹硕), Xiaodong Jian(建晓东), and Ping Qian(钱萍). Density functional theory study of formaldehyde adsorption and decomposition on Co-doped defective CeO₂ (110) surface[J]. 中国物理B, 2021, 30(10): 103101-103101.
[11]	Bo Sun(孙博), Dong He(贺栋), Hongbo Wang(王宏博), Jiangchao Liu(刘江超), Zunjian Ke(柯尊健), Li Cheng(程莉), and Xiangheng Xiao(肖湘衡). Oxygen vacancies and V co-doped Co₃O₄ prepared by ion implantation boosts oxygen evolution catalysis[J]. 中国物理B, 2021, 30(10): 106102-106102.
[12]	Hui Sun(孙慧), Jiaying Niu(钮佳颖), Haiying Cheng(成海英), Yuxi Lu(卢玉溪), Zirou Xu(徐紫柔), Lei Zhang(张磊), and Xiaobing Chen(陈小兵). Effects of Ni substitution on multiferroic properties in Bi₅FeTi₃O₁₅ ceramics[J]. 中国物理B, 2021, 30(10): 107701-107701.
[13]	李洁, 车利强, 乐天, 张佳浩, 孙培杰, Toshiro Takabatake, 路欣. Point-contact spectroscopy on antiferromagnetic Kondo semiconductors CeT₂Al₁₀ (T=Ru and Os)[J]. 中国物理B, 2020, 29(7): 77103-077103.
[14]	康玉娇, 陈元平, 袁加仁, 颜晓红, 谢月娥. Seeing Dirac electrons and heavy fermions in new boron nitride monolayers[J]. 中国物理B, 2020, 29(5): 57303-057303.
[15]	王焕明, 孙森, 徐家胤, 吕晓伟, 汪渊, 彭勇, 张析, 向钢. Microstructure and ferromagnetism of heavily Mn doped SiGe thin flims[J]. 中国物理B, 2020, 29(5): 57504-057504.