Multifunctional silicon-based light emitting device in standard complementary metal–oxide–semiconductor technology

doi:10.1088/1674-1056/20/1/018503

中国物理B ›› 2011, Vol. 20 ›› Issue (1): 18503-018503.doi: 10.1088/1674-1056/20/1/018503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Multifunctional silicon-based light emitting device in standard complementary metal–oxide–semiconductor technology

王伟, 黄北举, 董赞, 陈弘达

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2010-03-15 修回日期:2010-08-13 出版日期:2011-01-15 发布日期:2011-01-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60536030, 61036002, 60776024, 60877035 and 61036009) and National High Technology Research and Development Program of China (Grant Nos. 2007AA04Z329 and 2007AA04Z254).

Multifunctional silicon-based light emitting device in standard complementary metal–oxide–semiconductor technology

Wang Wei(王伟)^†, Huang Bei-Ju(黄北举), Dong Zan(董赞), and Chen Hong-Da(陈弘达)

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2010-03-15 Revised:2010-08-13 Online:2011-01-15 Published:2011-01-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60536030, 61036002, 60776024, 60877035 and 61036009) and National High Technology Research and Development Program of China (Grant Nos. 2007AA04Z329 and 2007AA04Z254).

摘要/Abstract

摘要： A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μ m complementary metal--oxide--semiconductor technology. This device is capable of versatile working modes: it can emit visible to near infra-red (NIR) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 V--12 V and emit NIR light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.

Abstract: A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal–oxide–semiconductor technology. This device is capable of versatile working modes: it can emit visible to near infra-red (NIR) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 V–12 V and emit NIR light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.

Key words: optoelectronic integrated circuit, complementary metal–oxide–semiconductor technology, silicon-based light emitting device, electroluminescence

中图分类号: (Optoelectronic devices)

85.60.-q

85.60.Jb (Light-emitting devices)

王伟, 黄北举, 董赞, 陈弘达. Multifunctional silicon-based light emitting device in standard complementary metal–oxide–semiconductor technology[J]. 中国物理B, 2011, 20(1): 18503-018503.

Wang Wei(王伟), Huang Bei-Ju(黄北举), Dong Zan(董赞), and Chen Hong-Da(陈弘达). Multifunctional silicon-based light emitting device in standard complementary metal–oxide–semiconductor technology[J]. Chin. Phys. B, 2011, 20(1): 18503-018503.

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Multifunctional silicon-based light emitting device in standard complementary metal–oxide–semiconductor technology

Multifunctional silicon-based light emitting device in standard complementary metal–oxide–semiconductor technology

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