Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage

doi:10.1088/1674-1056/abeedf

中国物理B ›› 2021, Vol. 30 ›› Issue (5): 58504-058504.doi: 10.1088/1674-1056/abeedf

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage

Bo Liu(刘波)^1,2,†, Tao Wei(魏涛)^1,2, Jing Hu(胡敬)¹, Wanfei Li(李宛飞)¹, Yun Ling(凌云)¹, Qianqian Liu(刘倩倩)¹, Miao Cheng(程淼)¹, and Zhitang Song(宋志棠)²

1 Research Center for Nanophotonic and Nanoelectronic Materials, School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China;
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

收稿日期:2021-01-22 修回日期:2021-02-26 接受日期:2021-03-16 出版日期:2021-05-14 发布日期:2021-05-14
通讯作者: Bo Liu E-mail:liubo@mail.usts.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 21773291, 61904118, and 22002102), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20190935 and BK20190947), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant Nos. 19KJA210005, 19KJB510012, 19KJB120005, and 19KJB430034), the Fund from the Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices (Grant No. SZS201812), the Science Fund from the Jiangsu Key Laboratory for Environment Functional Materials, the State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences.

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage

Bo Liu(刘波)^1,2,†, Tao Wei(魏涛)^1,2, Jing Hu(胡敬)¹, Wanfei Li(李宛飞)¹, Yun Ling(凌云)¹, Qianqian Liu(刘倩倩)¹, Miao Cheng(程淼)¹, and Zhitang Song(宋志棠)²

1 Research Center for Nanophotonic and Nanoelectronic Materials, School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China;
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Received:2021-01-22 Revised:2021-02-26 Accepted:2021-03-16 Online:2021-05-14 Published:2021-05-14
Contact: Bo Liu E-mail:liubo@mail.usts.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 21773291, 61904118, and 22002102), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20190935 and BK20190947), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant Nos. 19KJA210005, 19KJB510012, 19KJB120005, and 19KJB430034), the Fund from the Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices (Grant No. SZS201812), the Science Fund from the Jiangsu Key Laboratory for Environment Functional Materials, the State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences.

摘要/Abstract

摘要： The era of information explosion is coming and information need to be continuously stored and randomly accessed over long-term periods, which constitute an insurmountable challenge for existing data centers. At present, computing devices use the von Neumann architecture with separate computing and memory units, which exposes the shortcomings of “memory bottleneck”. Nonvolatile memristor can realize data storage and in-memory computing at the same time and promises to overcome this bottleneck. Phase-change random access memory (PCRAM) is called one of the best solutions for next generation non-volatile memory. Due to its high speed, good data retention, high density, low power consumption, PCRAM has the broad commercial prospects in the in-memory computing application. In this review, the research progress of phase-change materials and device structures for PCRAM, as well as the most critical performances for a universal memory, such as speed, capacity, and power consumption, are reviewed. By comparing the advantages and disadvantages of phase-change optical disk and PCRAM, a new concept of optoelectronic hybrid storage based on phase-change material is proposed. Furthermore, its feasibility to replace existing memory technologies as a universal memory is also discussed as well.

关键词: universal memory, optoelectronic hybrid storage, phase-change material, phase-change random access memory

Abstract: The era of information explosion is coming and information need to be continuously stored and randomly accessed over long-term periods, which constitute an insurmountable challenge for existing data centers. At present, computing devices use the von Neumann architecture with separate computing and memory units, which exposes the shortcomings of “memory bottleneck”. Nonvolatile memristor can realize data storage and in-memory computing at the same time and promises to overcome this bottleneck. Phase-change random access memory (PCRAM) is called one of the best solutions for next generation non-volatile memory. Due to its high speed, good data retention, high density, low power consumption, PCRAM has the broad commercial prospects in the in-memory computing application. In this review, the research progress of phase-change materials and device structures for PCRAM, as well as the most critical performances for a universal memory, such as speed, capacity, and power consumption, are reviewed. By comparing the advantages and disadvantages of phase-change optical disk and PCRAM, a new concept of optoelectronic hybrid storage based on phase-change material is proposed. Furthermore, its feasibility to replace existing memory technologies as a universal memory is also discussed as well.

Key words: universal memory, optoelectronic hybrid storage, phase-change material, phase-change random access memory

中图分类号: (Optoelectronic devices)

85.60.-q

85.35.-p (Nanoelectronic devices) 87.19.lv (Learning and memory) 82.53.Mj (Femtosecond probing of semiconductor nanostructures)

Bo Liu(刘波), Tao Wei(魏涛), Jing Hu(胡敬), Wanfei Li(李宛飞), Yun Ling(凌云), Qianqian Liu(刘倩倩), Miao Cheng(程淼), and Zhitang Song(宋志棠). Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage[J]. 中国物理B, 2021, 30(5): 58504-058504.

参考文献

[1] Hwang C S 2015 Adv. Electron. Mater. 1 1400056
[2] Huang X, Liu C, Jiang Y G and Zhou P 2020 Chin. Phys. B 29 078504
[3] Wong H S P, Raoux S, Kim S B, Liang J, Reifenberg J P, Rajendran B, Asheghi M and Goodson K E 2010 Proc. IEEE 98 2201
[4] Yang R 2020 Chin. Phys. B 29 097305
[5] Wouters D J, Waser R and Wuttig M 2015 Proc. IEEE 103 1274
[6] Apalkov D, Dieny B and Slaughter J M 2016 Proc. IEEE 104 1796
[7] Wong H S P and Salahuddin S 2015 Nat. Nanotechnol. 10 191
[8] Wong H S P, Lee H Y, Yu S, Chen Y S, Wu Y, Chen P S, Lee B, Chen F T and Tsai M J 2012 Proc. IEEE 100 1951
[9] Valov I and Kozicki M 2017 Nat. Mater. 16 1170
[10] Yu S 2018 Proc. IEEE 106 260
[11] Wu H, Wang X H, Gao B, Deng N, Lu Z, Haukness B, Bronner G and Qian H 2017 Proc. IEEE 105 1770
[12] Zambelli C, Navarro G, Sousa V, Prejbeanu I L and Perniola L 2017 Proc. IEEE 105 1790
[13] Ahn E C, Wong H S P and Pop E 2018 Nat. Rev. Mater. 3 18009
[14] Cao Q, Lü W, Wang X R, Guan X, Wang L, Yan S, Wu T and Wang X 2020 ACS Appl. Mater. Interfaces 12 42449
[15] Guo Y B and Zhu L Q 2020 Chin. Phys. B 29 078502
[16] Waterman A T 1923 Phys. Rev. 21 540
[17] Ovshinsky S R 1968 Phys. Rev. Lett. 21 1450
[18] Feinleib J, deNeufville J, Moss S C and Ovshinsky S R 1971 Appl. Phys. Lett. 18 254
[19] Ohta T, Nishiuchi K, Narumi K, Kitaoka Y, Ishibashi H, Yamada N and Kozaki T 2000 Jpn. J. Appl. Phys. 39 770
[20] Maeda T, Terao M and Shimano T 2003 Jpn. J. Appl. Phys. 42 1044
[21] Clarke P 2010 Phase-change memory found in handset
[22] Hruska J 2015 Intel, Micron reveal Xpoint, a new memory architecture that could outclass DDR4 and NAND
[23] Hady F T, Foong A, Veal B and Williams D 2017 Proc. IEEE 105 1822
[24] Choe J 2017
[25] Fong S W, Neumann C M and Wong H S P 2017 IEEE Trans. Electron. Dev. 64 4374
[26] Hruska J 2018 Intel Announces New Optane DC Persistent Memory
[27] Xu K, Miao X and Xu M 2019 Physi. Stat. Sol. RRL 13 1800506
[28] Lai S 2003 IEEE International Electron Devices Meeting (IEDM), December 8-10, Washington, DC, USA, p. 255
[29] Wuttig M 2005 Nat. Mater. 4 265
[30] Salinga M and Wuttig M 2011 Science 332 543
[31] Zhang W, Mazzarello R, Wuttig M and Ma E 2019 Nat. Rev. Mater. 4 150
[32] Liu B 2015 Data Storage at the Nanoscale: Advances and Applications (Singapore: Pan Stanford Publishing Pte. Ltd.) Ch. 11 pp. 463-589
[33] Karpov I V and Kostylev S A 2006 IEEE Electron Dev. Lett. 27 808
[34] Siegrist T, Jost P, Volker H, Woda M, Merkelbach P, Schlockermann C and Wuttig M 2011 Nat. Mater. 10 202
[35] Zhang W, Thiess A, Zalden P, Zeller R, Dederichs P H, Raty J Y, Wuttig M, Blügel S and Mazzarello R 2012 Nat. Mater. 11 952
[36] Yin Y, Sone H and Hosaka S 2006 Jpn. J. Appl. Phys. 45 8600
[37] Kang M J, Park T J, Kwon Y W, Ahn D H, Kang Y S, Jeong H, Ahn S J, Song Y J, Kim B C, Nam S W, Kang H K, Jeong G T and Chung C H 2011 IEEE International Electron Devices Meeting (IEDM), May 19-20, Osaka, Japan, p. 3.1.1
[38] Wu J Y, Breitwisch M, Kim S, Hsu T H, Cheek R, Du P Y, Li J, Lai E K, Zhu Y, Wang T Y, Cheng H Y, Schrott A, Joseph E A, Dasaka R, Raoux S, Lee M H, Lung H L and Lam C 2011 IEEE International Electron Devices Meeting (IEDM), May 19-20, Osaka, Japan, p. 3.2.1
[39] Liang J, Jeyasingh R G D, Chen H Y and Wong H S P 2011 IEEE Proc. Symp. VLSI Technology, April 25-27, Hsinchu, Taiwan, China, p. 100
[40] Xiong F, Liao A D and Estrada D, Pop E 2011 Science 332 568
[41] Ohyanagi T, Takaura N, Tai M, Kitamura M, Kinoshita M, Akita K, Morikawa T, Kato S, Araidai M, Kamiya K, Yamamoto T and Shiraishi K 2013 IEEE International Electron Devices Meeting (IEDM), December 9-11, Washington, DC, USA, p. 754
[42] Cheng H Y, BrightSky M, Raoux S, Chen C F, Du P Y, Wu J Y, Lin Y Y, Hsu T H, Zhu Y, Kim S, Lin C M, Ray A, Lung H L and Lam C 2013 IEEE International Electron Devices Meeting (IEDM), December 9-11, Washington, DC, USA, p. 758
[43] Lai S C, Kim S, BrightSky M, Zhu Y, Joseph E, Bruce R, Cheng H Y, Ray A, Raoux S, Wu J Y, Wang T Y, Cortes N S, Lin C M, Lin Y Y, Cheek R, Lai E K, Lee M H, Lung H L and Lam C 2013 IEEE Proc. Symp. VLSI Technology, June 11-13, Kyoto, Japan, p. T132
[44] Muneer S, Gokirmak A and Silva H 2015 IEEE Trans. Electron Dev. 62 1668
[45] Chien W C, Cheng H Y, BrightSky M, Ray A, Yeh C W, Kim W, Bruce R, Zhu Y, Ho H Y, Lung H L and Lam C 2016 IEEE International Electron Devices Meeting (IEDM), December 3-7, San Francisco, CA, USA, p. 552
[46] He M, He D, Qian H, Lin Q, Wan D, Cheng X, Xu M, Tong H and Miao X 2019 IEEE Electron Dev. Lett. 40 1595
[47] Modi G, Stach E A and Agarwal R 2020 ACS Nano 14 2162
[48] Servalli G 2009 IEEE International Electron Devices Meeting (IEDM), December 7-9, Baltimore, MD, USA, p. 113
[49] Nukala P, Lin C C, Composto R and Agarwal R 2015 Nat. Commun. 7 10482
[50] Zhang T, Liu B, Song Z, Liu W, Feng S and Chen B 2005 Chin. Phys. Lett. 22 1803
[51] Chen Y C, Rettner C T, Raoux S, Burr G W, Chen S H, Shelby R M, Salinga M, Risk W P, Happ T D, McClelland G M, Breitwisch M, Schrott A, Philipp J B, Lee M H, Cheek R, Nirsch T, Lamorey M, Chen C F, Joseph E, Zaidi S, Yee B, Lung H L, Bergmann R and Lam C 2006 IEEE International Electron Devices Meeting (IEDM), December 11-13, San Francisco, CA, USA, p. 1
[52] Raoux S, Jordan Sweet J L and Kellock A J 2008 J. Appl. Phys. 103 114310
[53] Ronneberger I, Zanolli Z, Wuttig M and Mazzarello R 2020 Adv. Mater. 32 2001033
[54] Yu D, Brittman S, Lee J S, Falk A L and Park H 2008 Nano Lett. 8 3429
[55] Burr G W, Breitwisch M J, Franceschini M, Garetto D, Gopalakrishnan K, Jackson B, Kurdi B, Lam C, Lastras L A, Padilla A, Rajendran B, Raoux S and Shenoy R S 2010 J. Vac. Sci. Technol. B 28 223
[56] Kang D H, Cheong B, Jeong J, Lee T S, Kim I H, Kim W M and Huh J Y 2005 Appl. Phys. Lett. 87 253504
[57] Loke D, Lee T H, Wang W J, Shi L P, Zhao R, Yeo Y C, Chong T C and Elliott S R 2012 Science 336 1566
[58] Rao F, Ding K, Zhou Y, Zheng Y, Xia M, Lv S, Song Z, Feng S, Ronneberger I, Mazzarello R, Zhang W and Ma E 2017 Science 358 1423
[59] Chen B, Chen Y, Ding K, Li K, Jiao F, Wang L, Zeng X, Wang J, Shen X, Zhang W, Rao F and Ma E 2019 Chem. Mater. 31 8794
[60] Hirata A, Ichitsubo T, Guan P F, Fujita T and Chen M W 2018 Phys. Rev. Lett. 120 205502
[61] Sadeghipour S M, Pileggi L and Asheghi M 2006 The Tenth Intersociety Conference on ITHERM, IEEE, May 30-June 2, San Diego, CA, USA, p. 660
[62] Johguchi K, Shintani T, Morikawa T, Yoshioka K and Takeuchi K 2013 Solid-State Electron. 81 78
[63] Jeong C W, Kang D H, Ha D W, Song Y J, Oh J H, Kong J H, Yoo J H, Park J H, Ryoo K C, Lim D W, Park S S, Kim J I, Oh Y T, Kim J S, Shin J M, Park J, Fai Y, Koh G H, Jeong G T, Jeong H S and Kim K 2008 Solid-State Electron. 52 591
[64] Kang D H, Ahn D H, Kim K B, Webb J F and Yi K W 2003 J. Appl. Phys. 94 3536
[65] Kang D H, Ahn D H, Kwon M H, Kwon H S, Kim K B, Lee K S and Cheong B 2004 Jpn. J. Appl. Phys. 43 5243
[66] Kang D H, Kim I H, Jeong J, Cheong B, Ahn D H, Lee D, Kim H M, Kim K B and Kim S H 2006 J. Appl. Phys. 100 054506
[67] Cheng H Y, Chen Y C, Chung R J and Chin T S 2006 Semicond. Sci. Technol. 21 1196
[68] Yoon S M, Choi K J, Lee N Y, Jung S W, Lee S Y, Park Y S, Yu B G, Lee S J and Yoon S G 2008 J. Electrochem. Soc. 155 H421
[69] Cheng H Y, Chen Y C, Le, C M, Chung R J and Chin T S 2006 J. Electrochem. Soc. 153 G685
[70] Jung K M, Jung M S, Kim Y B and Choi D K 2009 Thin Solid Film 517 3837
[71] Lee S Y, Choi K J, Ryu S O, Yoon S M, Lee N Y, Park Y S, Kim S H, Lee S H and Yu B G 2006 Appl. Phys. Lett. 89 053517
[72] Matsui Y, Kurotsuchi K, Tonomura O, Morikawa T, Kinoshita M, Fujisaki Y, Matsuzaki N, Hanzawa S, Terao M, Takaura N, Moriya H, Iwasaki T, Moniwa M and Koga T 2006 IEEE International Electron Devices Meeting (IEDM), December 11-13, San Francisco, CA, USA, p. 1
[73] Rao F, Song Z, Wu L, Zhong M and Feng S 2007 Appl. Phys. Lett. 91 073505
[74] Lee S Y, Park Y S, Yoon S M, Jung S W, Lee J and Yu B G 2009 Microelectron. Eng. 85 2342
[75] Shen J, Liu B, Song Z, Xu C, Rao F, Liang S, Feng S and Chen B 2008 Appl. Phys. Exp. 1 011201
[76] Zhang X, Liu B, Peng C, Rao F, Zhou X, Song S, Wang L, Cheng Y, Wu L, Yao D, Song Z and Feng S 2012 Chin. Phys. Lett. 29 107201
[77] Kim C, Suh D S, Kim K H P, Kang Y S, Lee T Y, Khang Y and Cahill D G 2008 Appl. Phys. Lett. 92 013109
[78] Xu C, Song Z, Liu B, Feng S and Chen B 2008 Appl. Phys. Lett. 92 062103
[79] Chen L, Zhang Z, Song S, Song Z, Zheng Q, Zhang X, Zhang J, Zheng W, Shao H, Zhu X and Yu W 2017 Appl. Phys. Lett. 110 023103
[80] Zhang T, Song Z, Gong Y, Lin Y, Xu C, Chen Y, Liu B and Feng S 2008 Appl. Phys. Lett. 92 113503
[81] Rao F, Song Z, Zhang T, Gong Y, Wu L, Feng S and Chen B 2008 Electrochem. Solid-State Lett. 11 H147
[82] Rao F, Song Z, Gong Y, Wu L, Liu B, Feng S and Chen B 2008 Appl. Phys. Lett. 92 223507
[83] Rao F, Song Z, Gong Y, Wu L, Feng S and Chen B 2008 Nanotechnology 19 445706
[84] Shang F, Zhai J, Song S, Song Z and Wang C 2010 Appl. Phys. Lett. 96 203504
[85] Hubert Q, Jahan C, Toffoli A, Delaye V, Lafond D, Grampeix H and DeSalvo B 2013 IEEE Trans. Electron Dev. 60 2268
[86] Suri M, Bichler O, Hubert Q, Perniola L, Sousa V, Jahan C, Vuillaume D, Gamrat C and DeSalvo B 2013 Solid-State Electron. 79 227
[87] Ahn C Y, Fong S W, Kim Y, Lee S, Sood A, Neumann C M, Ashegh M, Goodson K E, Pop E and Wong H S P 2015 Nano Lett. 15 6809
[88] Lu Y, Song S, Song Z, Wu L, He A, Gong Y, Rao F and Liu B 2012 Appl. Phys. Lett. 101 113104
[89] Fong S W, Neumann C M, Yalon E, Rojo M M, Pop E and Wong H S P 2017 IEEE Trans. Electron Dev. 64 4496
[90] Lencer D, Salinga M, Grabowski B, Hickel T, Neugebauer J and Wuttig M 2008 Nat. Mater. 7 972
[91] Wuttig M, Deringer V L, Gonze X, Bichara C and Raty J Y 2018 Adv. Mater. 30 1803777
[92] Raty J Y, Schumacher M, Golub P, Deringer V L, Gatti C and Wuttig M 2019 Adv. Mater. 31 1806280
[93] Raoux S and Wuttig M 2009 Phase Change Materials: Science and Applications (New York: Springer-Verlag)
[94] Li X B, Chen N K, Wang X P and Sun H B 2018 Adv. Funct. Mater. 28 1803380
[95] Kooi B J and Wuttig M 2020 Adv. Mater. 32 1908302
[96] Kang L and Chen L 2021 J. Electron. Mater. 50 1
[97] Wuttig M and Yamada N 2007 Nat. Mater. 6 824
[98] Noé P, Vallée Ce, Hippert F, Fillot F and Raty J Y 2018 Semicond. Sci. Technol. 33 013002
[99] Terao M, Morikawa T and Ohta T 2009 Jpn. J. Appl. Phys. 48 080001
[100] Nardone M, Simon M, Karpov I V and Karpov V G 2012 J. Appl. Phys. 112 071101
[101] Raoux S, Welnic W and Ielmini D 2010 Chem. Rev. 110 240
[102] Guo P, Sarangan A M and Agha I 2019 Appl. Sci. 9 530
[103] Goi E, Zhang Q, Chen X, Luan H and Gu M 2020 PhotoniX 1 3
[104] Wang J, Wang L and Liu J 2020 IEEE Access 8 121211
[105] Wuttig M, Bhaskaran H and Taubner T 2017 Nat. Photon. 11 465
[106] Jedema F 2007 Nat. Mater. 6 90
[107] Kojima R, Okabayashi S, Kashihara T, Horai K, Matsunaga T, Ohno E, Yamada N and Ohta T 1998 Jpn. J. Appl. Phys. 37 2098
[108] Zhou G F and Jacobs B A J 1999 Jpn. J. Appl. Phys. 38 1625
[109] Dimitrov D Z, Lu Y H, Tseng M R, Hsu W C and Shieh H P D 2002 Jpn. J. Appl. Phys. 41 1656
[110] Jeong S M, Kim K H, Choi S M and Lee H L 2009 Jpn. J. Appl. Phys. 48 045503
[111] Moss S C and DeNeufville J P 1972 J. Non-Cryst. Solids 8-10 45
[112] Xia J, Liu B, Song Z, Feng S and Chen B 2005 Chin. Phys. Lett. 22 934
[113] Hirota K, Nagino K and Ohbayashi G 1997 J. Appl. Phys. 82 65
[114] Hirotsune A, Miyauchi Y and Terao M 1995 Appl. Phys. Lett. 66 2312
[115] Lee C M, Chin T S, Huang Y Y, Tung I C, Jeng T R, Chiang D Y and Huang D R 1999 Jpn. J. Appl. Phys. 38 6369
[116] Men L, Tominaga J, Fuji H, Kikukawa T and Atoda N 2001 Jpn. J. Appl. Phys. 40 1629
[117] Xu C, Liu B, Song Z, Feng S and Chen B 2005 Chin. Phys. Lett. 22 2929
[118] Lee C M, Yen W S, Liu R H and Chin T S 2001 Jpn. J. Appl. Phys. 40 5321
[119] Wang K, Steimer C, Wamwangi D, Ziegler S and Wuttig M 2005 Appl. Phys. A 80 1611
[120] Kim S W, Lim W S, Kim T W and Lee H Y 2008 Jpn. J. Appl. Phys. 47 5337
[121] Zhang Z, Song S, Song Z, Cheng Y, Gu Y, Wu L, Liu B and Feng S 2013 J. Non-Cryst. Solids 381 54
[122] Huang Y J, Chen Y C and Hsieh T E 2009 J. Appl. Phys. 106 034916
[123] Seo J H, Song K H and Lee H Y 2010 J. Appl. Phys. 108 064515
[124] Raoux S, Shelby R M, Sweet J J, Munoz B, Salinga M, Chen Y C, Shih Y H, Lai E K and Lee M H 2009 Microelectron. Eng. 85 2330
[125] Borisenko K B, Chen Y, Cockayne D J H, Song S A and Jeong H S 2011 Acta Materialia 59 4335
[126] Huang Y J, Tsai M C, Wang C H and Hsieh T E 2012 Thin Solid Films 52 3692
[127] Skelton J M, Lee T H and Elliott S R 2012 Appl. Phys. Lett. 101 024106
[128] Fu J, Shen X, Nie Q, Wang G, Wu L, Dai S, Xu T and Wang R P 2013 Appl. Surf. Sci. 264 269
[129] Sherchenkov A, Kozyukhin S, Babich A and Lazarenko P 2013 J. Non-Cryst. Solids 377 26
[130] Zhang T, Zhang B, Shao R and Zheng K 2014 Mater. Lett. 128 329
[131] Bang K S, Oh Y J and Lee S Y 2015 J. Electron Mater. 44 2712
[132] Vinod E M, Ramesh K and Sangunni K S 2015 Sci. Rep. 5 8050
[133] Li Z, Lu Y, Ma Y, Song S, Shen X, Wang G, Dai S and Song Z 2016 J. Non-Cryst. Solids 452 9
[134] Jang M H, Park S J, Ahn M, Jeong K S, Park S J, Cho M H, Song J Y and Jeong H 2015 J. Mater. Chem. C 3 1707
[135] Liu B, Song Z, Zhang T, Feng S and Chen B 2004 Chin. Phys. 13 1947
[136] Liu B, Song Z, Zhang T, Xia J, Feng S and Chen B 2005 Thin Solid Films 478 49
[137] Jung M C, Lee Y M, Kim H D, Kim M G, Shin H J, Kim K H, Song S A, Jeong H S, Ko C H and Han M 2007 Appl. Phys. Lett. 91 083514
[138] Kim Y K, Baeck J H, Cho M H, Jeong E J and Ko D H 2006 J. Appl. Phys. 100 083502
[139] Jeong T H, Kim M R, Seo H, Park J W and Yeon C 2000 Jpn. J. Appl. Phys. 39 2775
[140] Seo H, Jeong T H, Park J W, Yeon C, Kim S J and Kim S Y 2000 Jpn. J. Appl. Phys. 39 745
[141] Horii H, Yi J H, Park J H, Ha Y H, Baek I G, Park S O, Hwang Y N, Lee S H, Kim Y T, Lee K H, Chug U I and Moon J T 2003 IEEE Proc. Symp. VLSI Technology, June 10-12, Kyoto, Japan, p. 177
[142] Liu B, Zhang T, Xia J, Song Z, Feng S and Chen B 2004 Semicond. Sci. Technol. 19 L61
[143] Ahn S J, Song Y J, Jeong C W, Shin J M, Fai Y, Hwang Y N, Lee S H, Ryoo K C, Lee S Y, Park J H, Horii H, Ha Y H, Yi J H, Kuh B J, Koh G H, Jeong G T, Jeong H S, Kim K and Ryu B I 2004 IEEE International Electron Devices Meeting (IEDM), December 13-15, San Francisco, CA, USA, p. 907
[144] Xu Z, Liu B, Chen Y, Zhang Z, Gao D, Wang H, Song Z, Wang C, Ren J, Zhu N, Xiang Y, Zhan Y and Feng S 2016 Solid State Electron. 116 119
[145] Cho E, Youn Y and Han S 2011 Appl. Phys. Lett. 99 183501
[146] Zhou X, Wu L, Song Z, Rao F, Zhu M, Peng C, Yao D, Song S, Liu B and Feng S 2012 Appl. Phys. Lett. 101 142104
[147] Souiki S, Hubert Q, Navarro G, Persico A, Jahan C, Henaff E, Delaye V, Blachier D, Sousa V, Perniola L, Vianello E and DeSalvo B 2013 IEEE International Reliability Physics Symposium (IRPS), May 14-18, Monterey, CA, USA, p. MY.8.1
[148] Park J H, Kim S W, Kim J H, Wu Z, Cho S L, Ahn D, Ahn D H, Lee J M, Nam S U and Ko D H 2015 J. Appl. Phys. 117 115703
[149] Wang G, Zhou J, Elliott S R and Sun Z 2019 J. Alloys Compd. 782 852
[150] Li T, Shen J, Wu L, Song Z, Lv S, Cai D, Zhang S, Guo T, Song S and Zhu M 2019 J. Phys. Chem. C 123 13377
[151] Cheng Y, Cai D, Zheng Y, Yan S, Wu L, Li C, Song W, Xin T, Lv S, Huang R, Lv H, Song Z and Feng S 2020 ACS Appl. Mater. Interfaces 12 23051
[152] Afonso C N, Solis J, Catalina F and Kalpouzos C 1992 Appl. Phys. Lett. 60 3123
[153] Zhang T, Song Z, Wang F, Liu B, Feng S and Chen B 2007 Jpn. J. Appl. Phys. 46 L602
[154] Park T J, Kim D H, Park S J, Choi S Y, Yoon S M, Choi K J, Lee N Y and Yu B G 2007 Jpn. J. Appl. Phys. 46 L543
[155] Rao F, Song Z, Ren K, Li X, Wu L, Xi W and Liu B 2009 Appl. Phys. Lett. 95 032105
[156] Chang C C, Chang P C, Kao K F, Yew T R, Tsai M J and Chin T S 2011 IEEE Trans. Magnetics 47 645
[157] Lu Y, Song S, Song Z and Liu B 2011 J. Appl. Phys. 109 064503
[158] Salinga M, Kersting B, Ronneberger I, Jonnalagadda V P, Vu X T, Gallo M L, Giannopoulos I, C Mirédin O, Mazzarello R and Sebastian A 2018 Nat. Mater. 17 681
[159] Yamada N, Ohno E, Nishiuchi K and Akahira N 1991 J. Appl. Phys. 69 2849
[160] Borg H J, Schijndel M, Rijpers J C N, Martijn H R L, Zhou G, Martijn J D, Ubbens I P D and Kuijper M 2001 Jpn. J. Appl. Phys. 40 1592
[161] Oomachi N, Ashida S, Nakamura N, Yusu K and Ichihara K 2002 Jpn. J. Appl. Phys. 41 1695
[162] Lankhorst M H R, Pieterson L, Schijndel M, Jacobs B A J and Rijpers J C N 2003 Jpn. J. Appl. Phys. 42 863
[163] Lankhorst M H R, Ketelaars B W S M M and Wolters R A M 2005 Nat. Mater. 4 347
[164] Liu B, Song Z, Feng S and Chen B 2005 Microelectron. Eng. 82 168
[165] Gu Y, Zhang T, Song Z, Liu B and Feng S 2010 J. Nanosci. Nanotechnol. 10 7040
[166] Yu J, Liu B, Zhang T, Song Z, Feng S and Chen B 2007 Appl. Surf. Sci. 253 6125
[167] Lee S, Jeong J, Lee T S, Kim W M and Cheong B 2008 Appl. Phys. Lett. 92 243507
[168] Wu Z, Lee S, Park Y W, Ahn H W, Jeong D S, Jeong J, No K and Cheong B 2010 Appl. Phys. Lett. 96 133510
[169] Wang F, Zhang T, Liu C, Song Z, Wu L, Liu B, Feng S and Chen B 2008 Appl. Surf. Sci. 254 2281
[170] Hsu Y S, Her Y C, Cheng S T and Tsai S Y 2007 IEEE Trans. Magnetics 43 936
[171] Jang M H, Park S J, Lim D H, Park S J, Cho M H, Ko D H, Heo M Y, Sohn H C and Kim S O 2010 Appl. Phys. Lett. 96 052112
[172] Xu J, Liu B, Song Z, Feng S and Chen B 2006 Mater. Sci. Eng. B 127 228
[173] Park Y S, Lee S Y, Yoon S M, Jung S W, Yu B G, Lee S J and Yoon S G 2007 Appl. Phys. Lett. 91 162107
[174] Peng C, Song Z, Rao F, Wu L, Zhu M, Song H, Liu B, Zhou X, Yao D, Yang P and Chu J 2011 Appl. Phys. Lett. 99 043105
[175] Peng C, Wu L, Song Z, Rao F, Zhu M, Li X, Liu B, Cheng L, Feng S, Yang P and Chu J 2011 Appl. Surf. Sci. 257 10667
[176] Ren K, Rao F, Song Z, Lv S, Cheng Y, Wu L, Peng C, Zhou X, Xia M, Liu B and Feng S 2012 Appl. Phys. Lett. 100 052105
[177] Wei F, Wang L, Kong T, Shi L, Huang R, Zhang J and Cheng G 2013 Appl. Phys. Lett. 103 181908
[178] Yin Y, Sone H and Hosaka S 2007 J. Appl. Phys. 102 064503
[179] Kim M S, Cho S H, Hong S K, Roh J S and Choi D J 2008 Ceram. Int. 34 1043
[180] Choi J, Lee H S, Lee T S, Lee S, Kim W M, Kim D and Cheong B 2009 Appl. Phys. Lett. 95 081905
[181] Zhu M, Wu L, Rao F, Song Z, Li X, Peng C, Zhou X, Ren K, Yao D and Feng S 2011 J. Alloys Compd. 509 10105
[182] Li X, Rao F, Song Z, Zhu M, Liu W and Sun Z 2011 J. Appl. Phys. 110 094318
[183] Lu Y, Song S, Song Z, Ren W, Cheng Y and Liu B 2011 Appl. Phys. Exp. 4 094102
[184] Zhang T, Song Z, Liu B, Liu W, Feng S and Chen B 2007 Chin. Phys. 16 2475
[185] Lai Y F, Feng J, Qiao B W, Huang X G, Cai Y F, Lin Y Y, Tang T A, Cai B C and Chen B 2006 Chin. Phys. Lett. 23 2516
[186] Zhang T, Song Z, Liu B, Feng S and Chen B 2007 Jpn. J. Appl. Phys. 46 L70
[187] Song S, Song Z, Lu Y, Liu B, Wu L and Feng S 2010 Mater. Lett. 64 2728
[188] Lu Y, Song S, Song Z, Ren K, Liu B and Feng S 2011 Appl. Phys. A 105 183
[189] Peng C, Yang P, Wu L, Song Z, Rao F, Xu J, Zhou X, Zhu M, Liu B and Chu J 2012 Electrochem. Solid-State Lett. 15 H101
[190] Cheng H Y, Wu J Y, Cheek R, Raoux S, BrightSky M, Garbin D, Kim S, Hsu T H, Zhu Y, Lai E K, Joseph E, Schrott A, Lai S C, Ray A, Lung H L and Lam C 2012 IEEE International Electron Devices Meeting (IEDM), December 10-13, San Francisco, CA, USA, p. 725
[191] Zhu M, Xia M, Rao F, Li X, Wu L, Ji X, Lv S, Song Z, Feng S, Sun H and Zhang S 2014 Nat. Commun. 5 4086
[192] Yin Y, Morioka S, Kozaki S, Satoh R and Hosaka S 2015 Appl. Surf. Sci. 349 230
[193] Wang Q, Liu B, Xia Y, Zheng Y, Huo R, Zhu M, Song S, Lv S, Cheng Y, Song Z and Feng S 2015 Phys. Stat. Sol. RRL 9 470
[194] Wang Q, Jiang M, Liu, B, Wang Y, Zheng Y, Song S, Wu Y, Song Z and Feng S 2016 ACS Appl. Mater. Interfaces 8 20885
[195] Wang G, Shen X, Nie Q, Wang H, Lu Y and Shi D 2016 Thin Solid Films 615 345
[196] Wang G, Nie Q, Shen X, Wang R, Wu L, Lv Y, Fu J, Xu T and Dai S 2012 Mater. Lett. 87 135
[197] Li Z, Si C, Zhou J, Xu H and Sun Z 2016 ACS Appl. Mater. Interfaces 8 26126
[198] Wang G, Li C, Shi D, Nie Q, Wang H, Shen X and Lu Y 2017 Sci. Rep. 7 46279
[199] Meng Y, Wu L, Song Z, Wen S, Jiang M, Wei J and Wang Y 2017 Mater. Lett. 201 109
[200] Zewdie G M, Zhou Y, Sun L, Rao F, Deringer V R L, Mazzarello R and Zhang W 2019 Chem. Mater. 31 4008
[201] Hu S, Xiao J, Zhou J, Elliott S R and Sun Z 2020 J. Mater. Chem. C 8 6672
[202] Xue Y, Cheng Y, Zheng Y, Yan S, Song W, Lv S, Song S and Song Z 2020 Mater. Today Phys. 15 100266
[203] Rao F, Song Z, Cheng Y, Liu X, Xia M, Li W, Ding K, Feng X, Zhu M and Feng S 2015 Nat. Commun. 6 10040
[204] Song Z, Song S, Zhu M, Wu L, Ren K, Song W and Feng S 2018 Sci. China Inf. Sci. 61 081302
[205] Song Z, Zhan Y, Cai D, Liu B, Chen Y and Ren J 2015 Nano-Micro Lett. 7 172
[206] Liu B, Liu W, Li Z, Li K, Wu L, Zhou J, Song Z and Sun Z 2020 ACS Appl. Mater. Interfaces 12 20672
[207] Pirovano A, Lacaita A L, Benvenuti A, Pellizzer F, Hudgens S and Bez R 2003 IEEE International Electron Devices Meeting (IEDM), December 8-10, Washington, DC, USA, p. 699
[208] Lai S 2003 IEEE International Electron Devices Meeting (IEDM), December 8-10, Washington, DC, USA, p. 255
[209] Ha Y H, Yi J H, Horii H, Park J H, Joo S H, Park S O, Chung U I and Moon J T 2003 IEEE Proc. Symp. VLSI Technology, June 10-12, Kyoto, Japan, p. 175
[210] Pellizzer F, Pirovano A, Ottogalli F, Magistretti M, Scaravaggi M, Zuliani P, Tosi M, Benvenuti A, Besana P, Cadeo S, Marangon T, Morandi R, Piva R, Spandre A, Zonca R, Modelli A, Varesi E, Lowrey T, Lacaita A, Casagrande G, Cappelletti P and Bez R 2004 IEEE Proc. Symp. VLSI Technology, June 15-17, Honolulu, HI, USA, p. 18
[211] Liu B and Song Z (Chin. Patent) ZL 201310370735.9 [2016-03-09] (In Chinese)
[212] Liu B and Song Z (Chin. Patent) ZL 201310370885.X [2016-07-06] (In Chinese)
[213] Jeong C W, Ahn S J, Hwang Y N, Song Y J, Oh J H, Lee S Y, Lee S H, Ryoo K C, Park J H, Park J H, Shin J M, Yeung F, Jeong W C, Kim J I, Koh, G H, Jeong G T, Jeong H S and Kim K 2006 Jpn. J. Appl. Phys. 45 3233
[214] Liu B, Song Z, Feng S and Chen B (Chin. Patent) ZL 200710043924.X [2009-08-19] (In Chinese)
[215] Che, W S, Lee C M, Chao D S, Chen Y C, Chen F, Chen C W, Yen P H, Chen M J, Wang W H, Hsiao T C, Yeh J T, Chiou S H, Liu M Y, Wang T C, Chein L L, Huang C M, Shih N T, Tu L S, Huang D, Yu T H, Kao M J and Tsai M J 2007 IEEE International Electron Devices Meeting (IEDM), December 10-12, Washington, DC, USA, p. 319
[216] Liu B, Song Z and Feng S (Chin. Patent) ZL 201510177956.3 [2017-04-19] (in Chinese)
[217] Chao D S, Chen Y C, Chen F, Chen M J, Yen P H, Lee C M, Chen W S, Lien C, Kao M J and Tsai M J 2007 IEEE Electron Dev. Lett. 28 871
[218] Yeung F, Ahn S J, Hwang Y N, Jeong C W, Song Y J, Lee S Y, Lee S H, Ryoo K C, Park J H, Shin J M, Jeong W C, Kim Y T, Koh G H, Jeong G T, Jeong H S and Kim K 2005 Jpn. J. Appl. Phys. 44 2691
[219] Im D H, Lee J I, Cho S L, An H G, Kim D H, Kim I S, Park H, Ahn D H, Horii H, Park S O, Chung U I and Moon J T 2008 IEEE International Electron Devices Meeting (IEDM), December 15-17, San Francisco, CA, USA, p. 211
[220] Pirovano A, Pellizzer F, Tortorelli I, Riganó A, Harrigan R, Magistretti M, Petruzza P, Varesi E, Redaelli A, Erbetta D, Marangon T, Bedeschi F, Fackenthal R, Atwood G and Bez R 2008 Solid-State Electron. 52 1467
[221] Gao D, Liu B, Xu Z, Wang H, Xia Y, Wang L, Zhu N, Li Y, Zhan Y, Song Z and Feng S 2016 Proc. SPIE 9818 98180
[222] Ryoo K C, Song Y J, Shin J M, Park S S, Lim D W, Kim J H, Park W I, Sim K R, Jeong J H, Kang D H, Kong J H, Jeong C W, Oh J H, Park J H, Kim J I, Oh Y T, Kim J S, Eun S H, Lee K W, Koh S P, Fai Y, Koh G H, Jeong G T, Jeong H S and Kim K 2007 Jpn. J. Appl. Phys. 46 2001
[223] Lee C M, Chen C W, Chen W S, Chao D S, Chen M J, Yen P H, Chen F, Kao M J and Tsai M J 2008 International Symposium on VLSI Technology, Systems and Applications 136
[224] Nakayama K, Kitagawa T, Ohmura M and Suzuki M 1993 Jpn. J. Appl. Phys. 32 564
[225] Nakayama K, Kojima K, Hayakawa F, Imai Y, Kitagawa A and Suzuki M 2000 Jpn. J. Appl. Phys. 39 6157
[226] Liu B, Song Z, Feng S and Chen B 2004 Chin. Phys. Lett. 21 2054
[227] Yin Y, Sone H and Hosaka S 2006 Jpn. J. Appl. Phys. 45 6177
[228] Cho S L, Yi J H, Ha Y H, Kuh B J, Lee C M, Park J H, Nam S D, Horii H, Cho B O, Ryoo K C, Park S O, Kim H S, Chung U I, Moon J T and Ryu B I 2005 IEEE Proc. Symp. VLSI Technology, June 14-16, Kyoto, Japan, p. 96
[229] Xu Z, Liu B, Chen Y, Gao D, Wang H, Song Z and Zhan Y 2017 Mater. Sci. Semicond. Proc. 64 143
[230] Meijer G I 2008 Science 319 1625
[231] Kim I S, Cho S L, Im D H, Cho E H, Kim D H, Oh G H, Ahn D H, Park S O, Nam S W, Moon J T and Chung C H 2010 IEEE Proc. Symp. VLSI Technology, June 15-17, Honolulu, HI, USA, p. 203
[232] Nam S W, Lee T Y, Wi J S, Lee D, Lee H S, Jin K B, Lee M H, Kim H M and Kim K B 2007 J. Electrochem. Soc. 154 H844
[233] Du X, Song S, Song Z, Liu W, Lv S, Gu Y, Xue W and Xi W 2012 Chin. Phys. B 21 098401
[234] Sugawara K, Gotoh T and Tanaka K 2001 Appl. Phys. Lett. 79 1549
[235] Kado H and Tohda T 1997 Jpn. J. Appl. Phys. 36 523
[236] Lee S H, Ko D K, Jung Y and Agarwal R 2006 Appl. Phys. Lett. 89 223116
[237] Meister S, Peng H, McIlwrath K, Jarausch K, Zhang X F and Cui Y 2006 Nano Lett. 6 1514
[238] Yu D, Wu J, Gu Q and Park H 2006 J. Am. Chem. Soc. 128 8148
[239] Lee S H, Jung Y and Agarwal R 2007 Nat. Nanotechnol. 2 626
[240] Jung Y, Lee S H, Jennings A T and Agarwal R 2008 Nano. Lett. 8 2056
[241] Jung Y, Yang C Y, Lee S H and Agarwal R 2009 Nano Lett. 9 2103
[242] Nam S W, Chung H S, Lo Y C, Qi L, Li J, Lu Y, Johnson A T C, Jung Y, Nukala P and Agarwal R 2012 Science 336 1561
[243] Han N, Kim S I, Yang, J D, Lee K, Sohn H, So H M, Ahn C W and Yoo K H 2011 Adv. Mater. 23 1871
[244] Ahn M, Oh J S, Park D, Jung H, Park S, Jeong K, Kim D, Sung N E, Lee K S, Yang C W and Cho M H 2020 ACS Appl. Electron. Mater. 2 2418
[245] Chen W and Guo J 2011 J. Appl. Phys. 110 084315
[246] Behnam A, Xiong F, Cappelli A, Wang N C, Carrion E A, Hong S, Dai Y, Lyons A S, Chow E K, Piccinini E, Jacoboni C and Pop E 2015 Appl. Phys. Lett. 107 123508
[247] Zheng J, Zhu S, Xu P, Dunham S and Majumdar A 2020 ACS Appl. Mater. Interfaces 12 21827
[248] Lin Y C, Dumcenco D O, Huang Y S and Suenaga K 2014 Nat. Nanotechnol. 9 391
[249] Desai S B, Madhvapathy S R, Sachid A B, Llinas J P, Wang Q, Ahn G H, Pitner G, Kim M J, Bokor J, Hu C, Wong H S P and Javey A 2016 Science 354 99
[250] Chang Y M, Lin C Y, Lin Y F and Tsukagoshi K 2016 Jpn. J. Appl. Phys. 55 1102A1
[251] Zhang F, Zhang H, Krylyuk S, Milligan C A, Zhu Y, Zemlyanov D Y, Bendersky L A, Burton B P, Davydov A V and Appenzeller J 2019 Nat. Mater. 18 55
[252] Shi L P, Chong T C, Tan P K, Miao X, Ho J J and Wu Y J 2000 Jpn. J. Appl. Phys. 39 733
[253] Kiyono K, Horie M, Ohno T, Uematsu T, Hashizume T, O’Neill M P, Balasubramanian K, Narayan R, Warland D and Zhou T 2001 Jpn. J. Appl. Phys. 40 1855
[254] Lo F H, Kuo J W, Tseng N H, Ju J J and Howe D 2004 Jpn. J. Appl. Phys. 43 4852
[255] Jiang S H, Kuo J W, Ma C P and Lo F H 2005 Jpn. J. Appl. Phys. 44 3453
[256] Ovshinsky S R 1997 Proc. 9th Symp. Phase Change Recording 44
[257] Zhang W and Ma E 2020 Mater. Today 41 156
[258] Lai Y F, Feng J, Qiao B W, Cai Y F, Lin Y Y, Tang T A, Cai B C and Chen B 2006 Appl. Phys. A 84 21
[259] Rao F, Song Z, Wu L, Liu B, Feng S and Chen B 2007 Appl. Phys. Lett. 91 123511
[260] Zhang Y, Feng J, Zhang Y, Zhang Z, Lin Y, Tang T, Cai B and Chen B 2007 Phys. Stat. Sol. RRL 1 R28
[261] Yin Y, Sone H and Hosaka S 2007 Microelectron. Eng. 84 2901
[262] Yin Y, Higano N, Sone H and Hosaka S 2008 Appl. Phys. Lett. 92 163509
[263] Oh G H, Park Y L, Lee J I, Im D H, Bae J S, Kim D H, Ahn D H, Horii H, Park S O, Yoon H S, Park I S, Ko Y S, Chung U I and Moon J T 2009 IEEE Proc. Symp. VLSI Technology, June 15–17, Kyoto, Japan, p. 220
[264] Nirschl T, Philipp J B, Happ T D, Burr G W, Rajendran B, Lee M H, Schrott A, Yang M, Breitwisch M, Chen C F, Joseph E, Lamorey M, Cheek R, Chen S H, Zaidi S, Raoux S, Chen Y C, Zhu Y, Bergmann R, Lung H L and Lam C 2007 IEEE International Electron Devices Meeting (IEDM), December 10–12, Washington, DC, USA, p. 461
[265] Braga S, Cabrini A and Torelli G 2011 IEEE Trans. Electron Dev. 58 517
[266] Hwang Y N, Um C Y, Lee J H, Wei C G, Oh H R, Jeong G T, Jeong H S, Kim C H and Chung C H 2010 IEEE Proc. Symp. VLSI Technology, June 15–17, Honolulu, HI, USA, p. 201
[267] Kang D H, Lee J H, Kong J H, Ha D, Yu J, Um C Y, Park J H, Yeung F, Kim J H, Park W I, Jeon Y J, Lee M K, Park J H, Song Y J, Oh J H, Jeong G T and Jeong H S 2008 IEEE Proc. Symp. VLSI Technology, June 17–19, Honolulu, HI, USA, p. 98
[268] Nakayama K, Takata M, Kasai T, Kitagawa A and Akita J 2007 J. Phys. D: Appl. Phys. 40 5061
[269] Braga S, Sanasi A, Cabrini A and Torelli G 2010 IEEE Trans. Electron Dev. 57 2556
[270] Rubin K A, Rosen H J, Tang W W, Imaino W and Strand T C 1994 Proc. SPIE 2338 247
[271] Nishiuchi K, Kitaura H, Yamada N and Akanira N 1998 Jpn. J. Appl. Phys. 37 2163
[272] Nagata K, Yamada N, Nishiuchi K, Furukawa S and Akahira N 1999 Jpn. J. Appl. Phys. 38 1679
[273] Nakamura A, Kobayashi I, Narumi K, Takaoka T, Furumiya S and Miyagawa N 2010 Jpn. J. Appl. Phys. 49 08KG01
[274] Kikukawa T, Inoue M, Mishima K and Ushida T 2010 Jpn. J. Appl. Phys. 49 08KF03
[275] Compagnoni C M, Goda A, Spinelli A S, Feeley P, Lacaita A L and Visconti A 2017 Proc. IEEE 105 1609
[276] Kim K 2010 IEEE International Electron Devices Meeting (IEDM), May 18–20, Monterey, CA, USA, p. 1.1.1
[277] Sasago Y, Kinoshita M, Morikawa T, Kurotsuchi K, Hanzawa S, Mine T, Shima A, Fujisaki Y, Kume H, Moriya H, Takaura N and Torii K 2009 IEEE Proc. Symp. VLSI Technology, June 15–17, Kyoto, Japan, p. 24
[278] Lee S H, Park H C, Kim M S, et al. 2011 IEEE International Electron Devices Meeting (IEDM), May 19–20, Osaka, Japan, p. 3.3.1
[279] Zhang C, Song Z T, Wu G P, Liu B, Wan X D, Wang L, Wang L H, Yang Z Y, Chen B and Feng S L 2011 IEEE Electron Dev. Lett. 32 1014
[280] Kinoshita M, Sasago Y, Minemura H, Anzai Y, Tai M, Fujisaki Y, Kusaba S, Morimoto T, Takahama T, Mine T, Shima A, Yonamoto Y and Kobayashi T 2012 IEEE Proc. of Symp. on VLSI Technology, June 12– 14, Honolulu, HI, USA, p. 35
[281] Liu Y, Song Z, Liu B, Wu G, Chen H, Zhang C, Wang L and Feng S 2012 IEEE Electron Dev. Lett. 33 1192
[282] Kau D C, Tang S, Karpov I V, Dodge R, Klehn B, Kalb J A, Strand J, Diaz A, Leung N, Wu J, Lee S, Langtry T, Chang K, Papagianni C, Lee J, Hirst J, Erra S, Flores E, Righos N, Castro H and Spadini G 2009 IEEE International Electron Devices Meeting (IEDM), December 7–9, Baltimore, MD, USA, p. 617
[283] Ovshinsky S R, Evans E J, Nelson D L and Fritzsche H 1968 IEEE Trans. Nucl. Sci. 15 311
[284] Evans E J, Helbers J H and Ovshinsky S R 1970 J. Non-Cryst. Solids 2 334
[285] Zhu M, Ren K and Song Z 2019 MRS Bull. 44 715
[286] Ielmini D and Zhang Y 2007 J. Appl. Phys. 102 054517
[287] Cheng H Y, Carta F, Chien W C, Lung H L and BrightSky M J 2019 J. Phys. D: Appl. Phys. 52 473002
[288] Chekol S A, Yoo J, Park J, Song J, Sung C and Hwangn H A 2018 Nanotechnology 29 345202
[289] Chekol S A, Song J, Yoo J, Lim S and Hwang H 2019 Appl. Phys. Lett. 114 102106
[290] Jia S, Li H, Gotoh T, Longeaud C, Zhang B, Lyu J, Lv S, Zhu M, Song Z, Liu Q, Robertson J and Liu M 2020 Nat. Commun. 11 4636
[291] Zhang G, Gan F, Lysenko S and Liu H 2007 J. Appl. Phys. 101 033127
[292] Zalden P, Shu M J, Chen F, Wu X, Zhu Y, Wen H, Johnston S, Shen Z X, Landreman P, Brongersma M, Fong S W, Wong H S P, Sher M J, Kaes P J M, Salinga M, von Hoegen A, Wuttig M and Lindenberg A M 2016 Phys. Rev. Lett. 117 067601
[293] Liu B, Song Z and Feng S (Chin. Patent) ZL 201310534339.5 [2016-06-01] (in Chinese)
[294] Hosseini P, Wright C D and Bhaskaran H 2014 Nature 511 206
[295] Farmakidis N, Youngblood N, Li X, Tan J, Swett J L, Cheng Z, Wright C D, Pernice W H P and Bhaskaran H 2019 Sci. Adv. 5 eaaw2687
[296] Peng C and Mansuripur M 2004 Appl. Opt. 43 4367
[297] Kieu K, Narumi K and Mansuripur M 2006 Appl. Opt. 45 7826
[298] Rousse A, Rischel C, Fourmaux S, Uschmann I, Sebban S, Grillon G, Balcou P, Förster E, Geindre J P, Audebert P, Gauthier J C and Hulin D 2001 Nature 410 65
[299] Liu Y, Aziz M M, Shalini A, Wright C D and Hicken R J 2012 J. Appl. Phys. 112 123526
[300] Wang Q, Maddock J, Rogers E T F, Roy T, Craig C, Macdonald K F, Hewak D W and Zheludev N I 2014 Appl. Phys. Lett. 104 121105
[301] Yang Q, Cai Z, Wang Y, Huang H and Wu Y 2015 Mater. Sci. Eng. B 193 189
[302] Cotton R L and Siegel J 2012 J. Appl. Phys. 112 123520
[303] Sundaram S K and Mazur E 2002 Nat. Mater. 1 217
[304] Huang L, Callan J P, Glezer N and Mazur E 1998 Phys. Rev. Lett. 80 185
[305] Sun X, Ehrhardt M, Lotnyk A, Lorenz P, Thelander E, Gerlach J W, Smausz T, Decker U and Rauschenbach B 2016 Sci. Rep. 6 28246
[306] Danz T, Domröse T and Ropers C 2021 Science 371 371
[307] Siegel J, Gawelda W, Puerto D, Dorronsoro C, Solis J, Afonso C N, de Sande J C G, Bez R, Pirovano A and Wiemer C 2008 J. Appl. Phys. 103 023516
[308] Fons P, Osawa H, Kolobov A V, Fukaya T, Suzuki M, Uruga T, Kawamura N, Tanida H and Tominaga J 2010 Phys. Rev. B 82 041203
[309] Li X B, Liu X Q, Liu X, Han D, Zhang Z, Han X D, Sun H B and Zhang S B 2011 Phys. Rev. Lett. 107 015501
[310] Simpson R E, Fons P, Kolobov A V, Fukaya T, Krbal M, Yagi T and Tominaga J 2011 Nat. Nanotechnol. 6 501
[311] Kolobov A V, Krbal M, Fons P, Tominaga J and Uruga T 2011 Nat. Chem. 3 311
[312] Chong T C, Shi L P, Zhao R, Tan P K, Li J M, Lee H K, Miao X S, Du A Y and Tung C H 2006 Appl. Phys. Lett. 88 122114
[313] Tominaga J 2019 Phys. Stat. Sol. RRL 13 1800539
[314] Hase M, Fons P, Mitrofanov K, Kolobov A V and Tominaga J 2015 Nat. Commun. 6 8367
[315] Boniardi M, Boschker J E, Momand J, Kooi B J, Redaelli A and Calarco R 2019 Phys. Stat. Sol. RRL 13 1800634
[316] Loke D, Shi L, Wang W, Zhao R, Ng L T, Lim K G, Yang H, Chong T C and Yeo Y C 2010 Appl. Phys. Lett. 97 243508
[317] Momand J, Wang R, Boschker J E, Verheijen M A, Calarco R and Kooi B J 2017 Nanoscale 9 8774
[318] Lotnyk A, Hilmi I, Ross U and Rauschenbach B 2018 Nano Res. 11 1676
[319] Kowalczyk P, Hippert F, Bernier N, Mocuta C, Sabbione C, Batista Pessoa W and Noe P 2018 Small 14 1704514
[320] Huang Y, Liu F, Zhang Y, Li W, Han G, Sun N and Liu F 2019 Appl. Surf. Sci. 493 904
[321] Lotnyk A, Dankwort T, Hilmi I, Kienle L and Rauschenbach B 2019 Nanoscale 11 10838
[322] Tominaga J, Sumi S and Awano H 2020 Appl. Phys. Exp. 13 075503
[323] Hu Q, Dong B, Wang L, Huang E, Tong H, He Y, Xu M and Miao X 2020 Chin. Phys. B 29 070701
[324] Lotnyk A, Hilmi I, Behrens M and Raschenbach B 2021 Appl. Surf. Sci. 536 147959
[325] Wang G and Cagin T 2006 Appl. Phys. Lett. 89 152101
[326] Wang C, Zhai J, Song Z, Shang F and Yao X 2010 Appl. Surf. Sci. 257 949
[327] Yang H, Chong C T, Zhao R, Lee H K, Li J, Lim K G and Shi L 2009 Appl. Phys. Lett. 94 203110
[328] Wang C, Zhai J, Song S, Song Z, Sun M and Shen B 2011 Electrochem. Solid-State Lett. 14 H258
[329] Wang C, Zhai J, Song Z, Shang F and Yao X 2011 Appl. Phys. A 103 193
[330] Loke D, Shi L, Wang W, Zhao R, Ng L T, Lim K G, Yang H, Chong T C and Yeo Y C 2010 Appl. Phys. Lett. 97 243508
[331] Wang C, Zhai J, Song S, Song Z and Yao X 2011 Current Appl. Phys. 11 S345
[332] Kim K H, Lee J H and Kyoung Y K 2011 Jpn. J. Appl. Phys. 50 101802
[333] Soeya S, Shintani T, Odaka T, Kondou R and Tominaga J 2013 Appl. Phys. Lett. 103 053103
[334] Zhu X, Hu Y, Zou H, Zhang J, Sun Y, Wu W, Yuan L, Zhai L, Song S and Song Z 2016 Scr. Mater. 121 66
[335] Zheng L, Song W, Song Z and Song S 2019 ACS Appl. Mater. Interfaces 11 45885
[336] Qiu Q, Wu P, Hu Y, Zhai J and Lai T 2021 Nanomaterials 11 20
[337] Rudé M, Pello J, Simpson R E, Osmond J, Roelkens G, van der Tol J J G M and Pruneri V 2013 Appl. Phys. Lett. 103 141119
[338] Rios C, Hosseini P, Wright C D, Bhaskaran H and Pernice W H P 2014 Adv. Mater. 26 1372
[339] Rios C, Stegmaier M, Cheng Z, Youngblood N, Wright C D, Pernice W H P and Bhaskaran H 2018 Opt. Mater. Exp. 8 2455
[340] Gemo E, Carrillo S G C, DeGalarreta C R, Baldycheva A, Hayat H, Youngblood N, Bhaskaran H, Pernice W H P and Wright C D 2019 Opt. Express 27 24724
[341] Ríos C, Stegmaier M, Hosseini P, Wang D, Scherer T and Wright C D 2015 Nat. Photon. 9 725
[342] Li X, Youngblood N, Ríos C, Cheng Z, Wright C D, Pernice W H P and Bhaskaran H 2019 Optica 6 1
[343] Rodriguez Hernandez G, Hosseini P, Ríos C, Wright C D and Bhaskaran H 2017 Adv. Electron. Mater. 3 1700079
[344] Chen N K and Li X B 2019 Chin. Phys. B 28 104202
[345] Karunaratne G, Gallo M L, Cherubini G, Benini L, Rahimi A and Sebastian A 2020 Nat. Electron. 3 327
[346] Xu M, Mai X, Lin J, Zhang W, Li Y, He Y, Tong H, Hou X, Zhou P and Miao X 2020 Adv. Funct. Mater. 30 2003419
[347] Liu Z and Wang L 2020 IEEE Access 8 76471
[348] Lim D H, Wu S, Zhao R, Lee J H, Jeong H and Shi L 2021 Nat. Commun. 12 319

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage

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