中国物理B ›› 2019, Vol. 28 ›› Issue (8): 87501-087501.doi: 10.1088/1674-1056/28/8/087501

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Model of output characteristics of giant magnetoresistance (GMR) multilayer sensor

Jiao-Feng Zhang(张教凤), Zheng-Hong Qian(钱正洪), Hua-Chen Zhu(朱华辰), Ru Bai(白茹), Jian-Guo Zhu(朱建国)   

  1. 1 School of Materials Science and Engineering, Sichuan University, Chengdu 610041, China;
    2 Center for Integrated Spintronic Devices, Hangzhou Dianzi University, Hangzhou 310018, China
  • 收稿日期:2019-02-19 修回日期:2019-05-22 出版日期:2019-08-05 发布日期:2019-08-05
  • 通讯作者: Zheng-Hong Qian E-mail:zqian@hdu.edu.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant No. 2018YFF01010701), the Natural Science Foundation of Zhejiang Province, China (Grant No. LQ17F010004), and the National Natural Science Foundation of China (Grant No. 61741506).

Model of output characteristics of giant magnetoresistance (GMR) multilayer sensor

Jiao-Feng Zhang(张教凤)1, Zheng-Hong Qian(钱正洪)1,2, Hua-Chen Zhu(朱华辰)2, Ru Bai(白茹)2, Jian-Guo Zhu(朱建国)1   

  1. 1 School of Materials Science and Engineering, Sichuan University, Chengdu 610041, China;
    2 Center for Integrated Spintronic Devices, Hangzhou Dianzi University, Hangzhou 310018, China
  • Received:2019-02-19 Revised:2019-05-22 Online:2019-08-05 Published:2019-08-05
  • Contact: Zheng-Hong Qian E-mail:zqian@hdu.edu.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant No. 2018YFF01010701), the Natural Science Foundation of Zhejiang Province, China (Grant No. LQ17F010004), and the National Natural Science Foundation of China (Grant No. 61741506).

摘要: In this paper, the giant magnetoresistance (GMR) multilayer sensor is fabricated with a Wheatstone bridge, and it exhibits excellent performance with a sensitivity of 2.8349 mV/(V/Oe) (1 Oe=79.5775 A·m-1) and a saturation field of 26 Oe along the sensitive axis. The GMR sensor is also characterized in a high magnetic field. The sensitivity decreases from 2.8349 mV/(V/Oe) at an angle of 0° to 0.0175 mV/(V/Oe) at an angle of 90°. Then, the sensor is placed in a series of rotating magnetic fields. We propose a model to express the output characteristics of the GMR multilayer sensor. The transfer curves of the sensor can be shown as two exactly symmetrical circles with an increasing radius when the magnetic field increases. The experimental results are consistent with the simulation results of the model. The advantage of this model is that it is simpler and more intuitive.

关键词: giant magnetoresistance, sensor phenomena and characterization, angular dependence

Abstract: In this paper, the giant magnetoresistance (GMR) multilayer sensor is fabricated with a Wheatstone bridge, and it exhibits excellent performance with a sensitivity of 2.8349 mV/(V/Oe) (1 Oe=79.5775 A·m-1) and a saturation field of 26 Oe along the sensitive axis. The GMR sensor is also characterized in a high magnetic field. The sensitivity decreases from 2.8349 mV/(V/Oe) at an angle of 0° to 0.0175 mV/(V/Oe) at an angle of 90°. Then, the sensor is placed in a series of rotating magnetic fields. We propose a model to express the output characteristics of the GMR multilayer sensor. The transfer curves of the sensor can be shown as two exactly symmetrical circles with an increasing radius when the magnetic field increases. The experimental results are consistent with the simulation results of the model. The advantage of this model is that it is simpler and more intuitive.

Key words: giant magnetoresistance, sensor phenomena and characterization, angular dependence

中图分类号:  (Giant magnetoresistance)

  • 75.47.De
75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects) 75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures)) 72.15.Gd (Galvanomagnetic and other magnetotransport effects)