中国物理B ›› 2009, Vol. 18 ›› Issue (10): 4460-4464.doi: 10.1088/1674-1056/18/10/059
唐为华1, 郭熹1, 符秀丽2, 彭志坚3
Fu Xiu-Li(符秀丽)a)†, Peng Zhi-Jian(彭志坚)b), Tang Wei-Hua(唐为华)c), and Guo Xi(郭熹)c)
摘要: We report on the synthesis and the characterisation of metal/semiconductor hybrids consisting of self-assembled CdS nanoparticles on Cd nanowires, which are grown by thermal evaporation of the mixture of CdS and Cr. The growth of the hybrids is attributed to the decomposition of CdS at high temperature and the strain relieving that arises mainly from the lattice mismatch between Cd and CdS. Temperature dependence of zero-field resistance of single nanohybrid indicates that the as-produced Cd/CdS nanohybrid undergoes a metal--semiconductor transition as a natural consequence of hybrid from metallic Cd and semiconducting CdS. The metal/semiconductor hybrid property provides a promising basis for the development of novel nanoelectronic devices.
中图分类号: (Self-assembly)