中国物理B ›› 2008, Vol. 17 ›› Issue (6): 2272-2276.doi: 10.1088/1674-1056/17/6/056

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Effect of thermal-annealing on the magnetoresistance of manganite-based junctions

沈保根1, 孙继荣1, 谢燕武2   

  1. (1)State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; (2)State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China;State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Scie
  • 收稿日期:2007-12-04 修回日期:2008-01-08 出版日期:2008-06-20 发布日期:2008-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 10474133 and 10674169) and the National Fundamental Research of China (Grant No 2007CB925002).

Effect of thermal-annealing on the magnetoresistance of manganite-based junctions

Xie Yan-Wu(谢燕武)a)b)†, Shen Bao-Gen (沈保根)b), and Sun Ji-Rong(孙继荣)b)   

  1. a State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China; b State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2007-12-04 Revised:2008-01-08 Online:2008-06-20 Published:2008-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 10474133 and 10674169) and the National Fundamental Research of China (Grant No 2007CB925002).

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摘要： Thermal-annealing has been widely used in modulating the oxygen content of manganites. In this work, we have studied the effect of annealing on the transport properties and magnetoresistance of junctions composed of a La0.9Ca0.1MnO3 + \delta film and a Nb-doped SrTiO3 substrate. We have demonstrated that the magnetoresistance of junctions is strongly dependent on the annealing conditions: From the junction annealed-in-air to the junction annealed-in-vacuum, the magnetoresistance near 0-V bias can vary from \sim --60% to \sim 0. A possible mechanism accounting for this phenomenon is discussed.

关键词: manganite, magnetoresistance, manganite junction, annealing

Abstract: Thermal-annealing has been widely used in modulating the oxygen content of manganites. In this work, we have studied the effect of annealing on the transport properties and magnetoresistance of junctions composed of a La0.9Ca0.1MnO3 + $\delta$ film and a Nb-doped SrTiO3 substrate. We have demonstrated that the magnetoresistance of junctions is strongly dependent on the annealing conditions: From the junction annealed-in-air to the junction annealed-in-vacuum, the magnetoresistance near 0-V bias can vary from $\sim$ --60% to $\sim$ 0. A possible mechanism accounting for this phenomenon is discussed.

Key words: manganite, magnetoresistance, manganite junction, annealing

中图分类号:  (Electronic transport in interface structures)

  • 73.40.-c
73.50.Jt (Galvanomagnetic and other magnetotransport effects) 75.47.Lx (Magnetic oxides) 75.60.Nt (Magnetic annealing and temperature-hysteresis effects) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)