中国物理B ›› 2008, Vol. 17 ›› Issue (4): 1475-1479.doi: 10.1088/1674-1056/17/4/055

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Particle-in-Cell/Monte Carlo Collision simulation of planar DC magnetron sputtering

赵华玉, 牟宗信   

  1. State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China
  • 收稿日期:2007-04-05 修回日期:2007-08-21 出版日期:2008-04-20 发布日期:2008-04-01
  • 基金资助:
    Project supported by the National Science Found for Distinguished Young Scholars of China (Grant No 50407015).

Particle-in-Cell/Monte Carlo Collision simulation of planar DC magnetron sputtering

Zhao Hua-Yu(赵华玉) and Mu Zong-Xin(牟宗信)†   

  1. State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China
  • Received:2007-04-05 Revised:2007-08-21 Online:2008-04-20 Published:2008-04-01
  • Supported by:
    Project supported by the National Science Found for Distinguished Young Scholars of China (Grant No 50407015).

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摘要： In this paper a numerical simulation of a planar DC magnetron discharge is performed with the Particle-in-Cell/Monte Carlo Collision (PIC/MCC) method. The magnetic field used in the simulation is calculated with finite element method according to experimental configuration. The simulation is carried out under the condition of gas pressure of 0.665\,Pa and voltage magnitude of 400V. Typical results such as the potential distribution, charged particle densities, the discharge current density and ion flux onto the target are calculated. The erosion profile from the simulation is compared with the experimental data. The maximum erosion position corresponds to the place where the magnetic field lines are parallel to the target surface.

关键词: magnetron sputtering, PIC/MCC, sputtering yield

Abstract: In this paper a numerical simulation of a planar DC magnetron discharge is performed with the Particle-in-Cell/Monte Carlo Collision (PIC/MCC) method. The magnetic field used in the simulation is calculated with finite element method according to experimental configuration. The simulation is carried out under the condition of gas pressure of 0.665 Pa and voltage magnitude of 400V. Typical results such as the potential distribution, charged particle densities, the discharge current density and ion flux onto the target are calculated. The erosion profile from the simulation is compared with the experimental data. The maximum erosion position corresponds to the place where the magnetic field lines are parallel to the target surface.

Key words: magnetron sputtering, PIC/MCC, sputtering yield

中图分类号:  (Transport properties)

  • 52.25.Fi
52.65.Pp (Monte Carlo methods) 52.65.Rr (Particle-in-cell method) 52.70.Ds (Electric and magnetic measurements) 81.15.Cd (Deposition by sputtering)