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Ningjing Yang(杨柠境), Hai Yang(杨海), and Guojun Jin(金国钧). Interface-induced topological phase and doping-modulated bandgap of two-dimensioanl graphene-like networks[J]. 中国物理B, 2023, 32(1): 17201-017201. |
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Pezhman Sheykholeslami-Nasab, Mahdi Davoudi-Darareh, and Mohammad Hassan Yousefi. Modeling and numerical simulation of electrical and optical characteristics of a quantum dot light-emitting diode based on the hopping mobility model: Influence of quantum dot concentration[J]. 中国物理B, 2022, 31(6): 68504-068504. |
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Linwei Huai(淮琳崴), Yang Luo(罗洋), Samuel M. L. Teicher, Brenden R. Ortiz, Kaize Wang(王铠泽),Shuting Peng(彭舒婷), Zhiyuan Wei(魏志远), Jianchang Shen(沈建昌), Bingqian Wang(王冰倩), Yu Miao(缪宇),Xiupeng Sun(孙秀鹏), Zhipeng Ou(欧志鹏), Stephen D. Wilson, and Junfeng He(何俊峰). Surface-induced orbital-selective band reconstruction in kagome superconductor CsV3Sb5[J]. 中国物理B, 2022, 31(5): 57403-057403. |
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Hongxia Liu(刘虹霞), Xinyue Zhang(张馨月), Wen Li(李文), and Yanzhong Pei(裴艳中). Advances in thermoelectric (GeTe)x(AgSbTe2)100-x[J]. 中国物理B, 2022, 31(4): 47401-047401. |
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Tongyao Wu(吴桐尧), Hongyuan Wang(王洪远), Yuanyuan Yang(杨媛媛), Shaofeng Duan(段绍峰), Chaozhi Huang(黄超之), Tianwei Tang(唐天威), Yanfeng Guo(郭艳峰), Weidong Luo(罗卫东), and Wentao Zhang(张文涛). Determination of the surface states from the ultrafast electronic states in a thermoelectric material[J]. 中国物理B, 2022, 31(2): 27902-027902. |
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Wei-Xia Luo(罗伟霞), Xue-Lu Liu(刘雪璐), Xiang-Dong Luo(罗向东), Feng Yang(杨峰), Shen-Jin Zhang(张申金), Qin-Jun Peng(彭钦军), Zu-Yan Xu(许祖彦), and Ping-Heng Tan(谭平恒). Photoreflectance system based on vacuum ultraviolet laser at 177.3 nm[J]. 中国物理B, 2022, 31(11): 110701-110701. |
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Junyu Zong(宗君宇), Yang Xie(谢阳), Qinghao Meng(孟庆豪), Qichao Tian(田启超), Wang Chen(陈望), Xuedong Xie(谢学栋), Shaoen Jin(靳少恩), Yongheng Zhang(张永衡), Li Wang(王利), Wei Ren(任伟), Jian Shen(沈健), Aixi Chen(陈爱喜), Pengdong Wang(王鹏栋), Fang-Sen Li(李坊森), Zhaoyang Dong(董召阳), Can Wang(王灿), Jian-Xin Li(李建新), and Yi Zhang(张翼). Observation of multiple charge density wave phases in epitaxial monolayer 1T-VSe2 film[J]. 中国物理B, 2022, 31(10): 107301-107301. |
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Yunlong Li(李云龙), Chaozhi Huang(黄超之), Guohua Wang(王国华), Jiayuan Hu(胡佳元), Shaofeng Duan(段绍峰), Chenhang Xu(徐晨航), Qi Lu(卢琦), Qiang Jing(景强), Wentao Zhang(张文涛), and Dong Qian(钱冬). Topological Dirac surface states in ternary compounds GeBi2Te4, SnBi2Te4 and Sn0.571Bi2.286Se4[J]. 中国物理B, 2021, 30(12): 127901-127901. |
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S Lu(卢帅), K Peng(彭坤), P D Wang(王鹏栋), A X Chen(陈爱喜), W Ren(任伟), X W Fang(方鑫伟), Y Wu(伍莹), Z Y Li(李治云), H F Li(李慧芳), F Y Cheng(程飞宇), K L Xiong(熊康林), J Y Yang(杨继勇), J Z Wang(王俊忠), S A Ding(丁孙安), Y P Jiang(蒋烨平), L Wang(王利), Q Li(李青), F S Li(李坊森), and L F Chi(迟力峰). Molecular beam epitaxy growth of monolayer hexagonal MnTe2 on Si(111) substrate[J]. 中国物理B, 2021, 30(12): 126804-126804. |
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Hai-Qing Xie(谢海情), Dan Wu(伍丹), Xiao-Qing Deng(邓小清), Zhi-Qiang Fan(范志强), Wu-Xing Zhou(周五星), Chang-Qing Xiang(向长青), and Yue-Yang Liu(刘岳阳). Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application[J]. 中国物理B, 2021, 30(11): 117102-117102. |
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张帅, 宋洋, 李金梅, 王振宇, 刘晨, 王嘉鸥, 高蕾, 卢建臣, 张余洋, 林晓, 潘金波, 杜世萱, 高鸿钧. Epitaxial fabrication of monolayer copper arsenide on Cu(111)[J]. 中国物理B, 2020, 29(7): 77301-077301. |
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王成玮, 王美晓, 姜娟, 杨海峰, 杨乐仙, 史武军, 赖晓芳, Sung-Kwan Mo, Alexei Barinov, 颜丙海, 刘志, 黄富强, 贾金峰, 柳仲楷, 陈宇林. Electronic structure and spatial inhomogeneity of iron-based superconductor FeS[J]. 中国物理B, 2020, 29(4): 47401-047401. |
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刘雪飞, 罗子江, 周勋, 魏节敏, 王一, 郭祥, 吕兵, 丁召. Structural, mechanical, and electronic properties of 25 kinds of Ⅲ-V binary monolayers:A computational study with first-principles calculation[J]. 中国物理B, 2019, 28(8): 86105-086105. |
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Irfan Ahmed, Muhammad Rafique, Mukhtiar Ahmed Mahar, Abdul Sattar Larik, Mohsin Ali Tunio, 帅永. Inducing opto-electronic and spintronic trends in bilayer h-BN through TMO3 clusters incorporation: Ab-initio study[J]. 中国物理B, 2019, 28(11): 116301-116301. |
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Engin Ateser, Oguzhan Okvuran, Yasemin Oztekin Ciftci, Haci Ozisik, Engin Deligoz. Physical properties of ternary thallium chalcogenes Tl2MQ3 (M=Zr, Hf; Q=S, Se, Te) via ab-initio calculations[J]. 中国物理B, 2019, 28(10): 106301-106301. |