中国物理B ›› 2005, Vol. 14 ›› Issue (2): 420-421.doi: 10.1088/1009-1963/14/2/034

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Pico-second photoelectric characteristic in manganite oxide La0.67Ca0.33MnO3 films

黄延红1, 吕惠宾1, 何萌1, 金奎娟1, 陈正豪1, 周岳亮1, 程波林1, 戴守愚1, 杨国桢1, 赵昆2   

  1. (1)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; (2)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China
  • 收稿日期:2004-10-26 出版日期:2005-03-02 发布日期:2005-03-02
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10334070).

Pico-second photoelectric characteristic in manganite oxide La0.67Ca0.33MnO3 films

Zhao Kun (赵昆)ab, Huang Yan-Hong (黄延红)a, Lü Hui-Bin (吕惠宾)a, He Meng (何萌)a, Jin Kui-Juan (金奎娟)a, Chen Zheng-Hao (陈正豪)a, Zhou Yue-Liang (周岳亮)a, Cheng Bo-Lin (程波林)a, Dai Shou-Yu (戴守愚)a, Yang Guo-Zhen (杨国桢)a   

  1. a Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; b International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China
  • Received:2004-10-26 Online:2005-03-02 Published:2005-03-02
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10334070).

摘要: Ultrafast photoelectric characteristic has been observed in La0.67Ca0.33MnO3 films on tilted SrTiO3 substrates. A pico-second (ps) open-circuit photovoltage of the perovskite manganese oxide films has been obtained when the films were irradiated by a 1.064μm laser pulse of 25 ps duration. The rise time and full width at half-maximum of the photovoltage pulse are ~300 ps and ~700 ps, respectively. The photovoltaic sensitivity was as large as ~500 mV/mJ.

关键词: manganese oxide, thin film, photoelectric characteristic

Abstract: Ultrafast photoelectric characteristic has been observed in La0.67Ca0.33MnO3 films on tilted SrTiO3 substrates. A pico-second (ps) open-circuit photovoltage of the perovskite manganese oxide films has been obtained when the films were irradiated by a 1.064μm laser pulse of 25 ps duration. The rise time and full width at half-maximum of the photovoltage pulse are ~300 ps and ~700 ps, respectively. The photovoltaic sensitivity was as large as ~500 mV/mJ.

Key words: manganese oxide, thin film, photoelectric characteristic

中图分类号:  (Photoconduction and photovoltaic effects)

  • 72.40.+w
78.47.-p (Spectroscopy of solid state dynamics) 61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation)) 73.50.Pz (Photoconduction and photovoltaic effects)