中国物理B ›› 2004, Vol. 13 ›› Issue (11): 1941-1946.doi: 10.1088/1009-1963/13/11/032

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Electronic structure of Yb/H－Si (111) interface

李宏年, 王晓雄, 何少龙, 张寒杰, 李海洋, 鲍世宁   

  1. Department of Physics and the Central Laboratory, Zhejiang University, Hangzhou 310027, China
  • 收稿日期:2003-12-22 修回日期:2004-04-26 出版日期:2005-06-20 发布日期:2005-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10074053).

Electronic structure of Yb/H－Si (111) interface

Li Hong-Nian (李宏年), Wang Xiao-Xiong (王晓雄), He Shao-Long (何少龙), Zhang Han-Jie (张寒杰), Li Hai-Yang (李海洋), Bao Shi-Ning (鲍世宁)   

  1. Department of Physics and the Central Laboratory, Zhejiang University, Hangzhou 310027, China
  • Received:2003-12-22 Revised:2004-04-26 Online:2005-06-20 Published:2005-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10074053).

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摘要： Photoemission spectra are measured for Yb covered surface of wet-chemically-etched H－Si (111). The results reveal that the lattice structure of the H－Si (111) surface is stable against the deposition of Yb atoms. X-ray photoemission spectra indicate the formation of a polarized (dipole) surface layer, with the silicon negatively charged. Ultraviolet photoemission spectra exhibit the semiconducting property of the interface below one monolayer coverage. Work function variation during the formation of the Yb/H－Si (111) interface is measured by the secondary-electron cutoff in the ultraviolet photoemission spectral line. The largest decrease of work function is ～1.65eV. The contributions of the dipole surface layer and the band bending to the work function change are determined to be ～1.15eV and ～0.5eV, respectively. The work function of metal Yb is determined to be ～2.80±0.05eV.

Abstract: Photoemission spectra are measured for Yb covered surface of wet-chemically-etched H－Si (111). The results reveal that the lattice structure of the H－Si (111) surface is stable against the deposition of Yb atoms. X-ray photoemission spectra indicate the formation of a polarized (dipole) surface layer, with the silicon negatively charged. Ultraviolet photoemission spectra exhibit the semiconducting property of the interface below one monolayer coverage. Work function variation during the formation of the Yb/H－Si (111) interface is measured by the secondary-electron cutoff in the ultraviolet photoemission spectral line. The largest decrease of work function is ～1.65eV. The contributions of the dipole surface layer and the band bending to the work function change are determined to be ～1.15eV and ～0.5eV, respectively. The work function of metal Yb is determined to be ～2.80±0.05eV.

Key words: Yb/H－Si (111), photoemission spectra, electronic structure, work function

中图分类号:  (Other solid inorganic materials)

  • 78.55.Hx
73.30.+y (Surface double layers, Schottky barriers, and work functions) 78.70.En (X-ray emission spectra and fluorescence) 78.40.-q (Absorption and reflection spectra: visible and ultraviolet) 73.20.At (Surface states, band structure, electron density of states)