中国物理B ›› 2003, Vol. 12 ›› Issue (9): 1026-1032.doi: 10.1088/1009-1963/12/9/319

• • 上一篇    

Study of far-infrared reflection and Raman scattering spectra in reactive ion, etched ZnTe

小川博司1, 郭其新1, 吴森2, 沈文忠2   

  1. (1)Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840-8502, Japan; (2)Department of Physics, Shanghai Jiao Tong University, Shanghai 200030, China
  • 收稿日期:2003-04-22 修回日期:2002-11-30 出版日期:2003-09-16 发布日期:2005-03-16
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10125416).

Study of far-infrared reflection and Raman scattering spectra in reactive ion, etched ZnTe

Wu Sen (吴森)a, Shen Wen-Zhong (沈文忠)a, Ogawa Hiroshi (小川博司)b, Guo Qi-Xin (郭其新)b    

  1. a Department of Physics, Shanghai Jiao Tong University, Shanghai 200030, China; b Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840-8502, Japan
  • Received:2003-04-22 Revised:2002-11-30 Online:2003-09-16 Published:2005-03-16
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10125416).

PDF (PC)

446

赞

摘要： Far-infrared reflection and Raman scattering measurements have been carried out on reactive ion, etched p-ZnTe samples. The averaged thickness of the surface damaged layer is found to be in the range of 1.0－1.5μm, and the, etch-induced defect density is in the order of 10^{18}cm^{-3}. The Raman intensity ratio between the second-order Raman peaks and the first-order longitudinal optical phonons reveals an increase trend with the radio frequency (rf) power. With the aid of related theories, we discuss the effects of the rf plasma power and the concentration of CH_4/H_2 on the damage, disorder, and the second-order Raman structures in p-ZnTe samples.

Abstract: Far-infrared reflection and Raman scattering measurements have been carried out on reactive ion, etched p-ZnTe samples. The averaged thickness of the surface damaged layer is found to be in the range of 1.0－1.5μm, and the, etch-induced defect density is in the order of $10^{18}$cm$^{-3}$. The Raman intensity ratio between the second-order Raman peaks and the first-order longitudinal optical phonons reveals an increase trend with the radio frequency (rf) power. With the aid of related theories, we discuss the effects of the rf plasma power and the concentration of CH$_4$/H$_2$ on the damage, disorder, and the second-order Raman structures in p-ZnTe samples.

Key words: reactive ion, etched, spectroscopic measurements, ZnTe

中图分类号:  (Surface cleaning, etching, patterning)

  • 81.65.Cf
78.30.Fs (III-V and II-VI semiconductors) 63.20.-e (Phonons in crystal lattices) 61.72.Dd (Experimental determination of defects by diffraction and scattering)