中国物理B ›› 2002, Vol. 11 ›› Issue (1): 66-71.doi: 10.1088/1009-1963/11/1/314

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Magnetization reversal mechanism of magnetic tunnel junctions

李建1, 王跃1, 陈建勇1, 刘存业2, 徐庆宇3, 倪刚3, 桑海3, 都有为3   

  1. (1)Department of Physics, Southwest China Normal University, Chongqing 400715, China; (2)Department of Physics, Southwest China Normal University, Chongqing 400715, China; State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China; (3)State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
  • 收稿日期:2001-04-02 修回日期:2001-08-22 出版日期:2002-01-12 发布日期:2005-06-12
  • 基金资助:
    Project supported by the State Key Program of Basic Research of China( Grant No. G1999064508), and the National Natural Science Foundation of China (Grant No. 19890310{4}).

Magnetization reversal mechanism of magnetic tunnel junctions

Liu Cun-Ye (刘存业)ab, Li Jian (李建)a, Wang Yue (王跃)a, Chen Jian-Yong (陈建勇)a, Xu Qing-Yu (徐庆宇)b, Ni Gang (倪刚)b, Sang Hai (桑海)b, Du You-Wei (都有为)b   

  1. a Department of Physics, Southwest China Normal University, Chongqing 400715, China; b State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
  • Received:2001-04-02 Revised:2001-08-22 Online:2002-01-12 Published:2005-06-12
  • Supported by:
    Project supported by the State Key Program of Basic Research of China( Grant No. G1999064508), and the National Natural Science Foundation of China (Grant No. 19890310{4}).

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摘要： Using the ion-beam-sputtering technique, we have fabricated Fe/Al2O3/Fe magnetic tunnelling junctions (MTJs). We have observed double-peaked shapes of curves, which have a level summit and a symmetrical feature, showing the magnetoresistance of the junction as a function of applied field. We have measured the tunnel conductance of MTJs which have insulating layers of different thicknesses. We have studied the dependence of the magnetoresistance of MTJs on tunnel conductance. The microstructures of hard- and soft-magnetic layers and interfaces of ferromagnets and insulators were probed. Analysing the influence of MJT microstructures, including those having clusters or/and granules in magnetic and non-magnetic films, a magnetization reversal mechanism (MRM) is proposed, which suggests that the MRM of tunnelling junctions may be explained by using a group-by-group reversal model of magnetic moments of the mesoscopical particles. We discuss the influence of MTJ microstructures, including those with clusters or/and granules in the ferromagnetic and non-magnetic films, on the MRM.

Abstract: Using the ion-beam-sputtering technique, we have fabricated Fe/Al2O3/Fe magnetic tunnelling junctions (MTJs). We have observed double-peaked shapes of curves, which have a level summit and a symmetrical feature, showing the magnetoresistance of the junction as a function of applied field. We have measured the tunnel conductance of MTJs which have insulating layers of different thicknesses. We have studied the dependence of the magnetoresistance of MTJs on tunnel conductance. The microstructures of hard- and soft-magnetic layers and interfaces of ferromagnets and insulators were probed. Analysing the influence of MJT microstructures, including those having clusters or/and granules in magnetic and non-magnetic films, a magnetization reversal mechanism (MRM) is proposed, which suggests that the MRM of tunnelling junctions may be explained by using a group-by-group reversal model of magnetic moments of the mesoscopical particles. We discuss the influence of MTJ microstructures, including those with clusters or/and granules in the ferromagnetic and non-magnetic films, on the MRM.

Key words: tunnelling junction, magnetoresistance, spin-dependent scattering

中图分类号:  (Magnetization reversal mechanisms)

  • 75.60.Jk
75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures)) 81.15.Cd (Deposition by sputtering) 73.50.Jt (Galvanomagnetic and other magnetotransport effects) 75.30.Cr (Saturation moments and magnetic susceptibilities) 72.20.My (Galvanomagnetic and other magnetotransport effects) 73.40.Gk (Tunneling)