中国物理B ›› 2022, Vol. 31 ›› Issue (10): 107501-107501.doi: 10.1088/1674-1056/ac6ed9

• RAPID COMMUNICATION • 上一篇    下一篇

Multiple modes of perpendicular magnetization switching scheme in single spin—orbit torque device

Tong-Xi Liu(刘桐汐)1, Zhao-Hao Wang(王昭昊)1,†, Min Wang(王旻)1, Chao Wang(王朝)1, Bi Wu(吴比)2, Wei-Qiang Liu(刘伟强)2, and Wei-Sheng Zhao(赵巍胜)1,‡   

  1. 1. Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China;
    2. College of Integrated Circuits, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
  • 收稿日期:2022-02-14 修回日期:2022-04-17 出版日期:2022-10-16 发布日期:2022-09-27
  • 通讯作者: Zhao-Hao Wang, Wei-Sheng Zhao E-mail:zhaohao.wang@buaa.edu.cn;wszhao@buaa.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62171013 and 61704005), the National Key Research and Development Program of China (Grant Nos. 2021YFB3601303, 2021YFB3601304, and 2021YFB3601300), the Beijing Municipal Science and Technology Project, China (Grant No. Z201100004220002), and the Fundamental Research Funds for the Central Universities, China (Grant No. YWF-21-BJ-J-1043).

Multiple modes of perpendicular magnetization switching scheme in single spin—orbit torque device

Tong-Xi Liu(刘桐汐)1, Zhao-Hao Wang(王昭昊)1,†, Min Wang(王旻)1, Chao Wang(王朝)1, Bi Wu(吴比)2, Wei-Qiang Liu(刘伟强)2, and Wei-Sheng Zhao(赵巍胜)1,‡   

  1. 1. Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China;
    2. College of Integrated Circuits, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
  • Received:2022-02-14 Revised:2022-04-17 Online:2022-10-16 Published:2022-09-27
  • Contact: Zhao-Hao Wang, Wei-Sheng Zhao E-mail:zhaohao.wang@buaa.edu.cn;wszhao@buaa.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62171013 and 61704005), the National Key Research and Development Program of China (Grant Nos. 2021YFB3601303, 2021YFB3601304, and 2021YFB3601300), the Beijing Municipal Science and Technology Project, China (Grant No. Z201100004220002), and the Fundamental Research Funds for the Central Universities, China (Grant No. YWF-21-BJ-J-1043).

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摘要： Spin—orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized for inducing various modes of magnetization switching. However, it is a challenge that so many multiple modes of magnetization switching are integrated together. Here we propose a method of implementing both unipolar switching and bipolar switching of the perpendicular magnetization within a single SOT device. The mode of switching can be easily changed by tuning the amplitude of the applied current. We show that the field-like torque plays an important role in switching process. The field-like torque induces the precession of the magnetization in the case of unipolar switching, however, the field-like torque helps to generate an effective z-component torque in the case of bipolar switching. In addition, the influence of key parameters on the mode of switching is discussed, including the field-like torque strength, the bias field, and the current density. Our proposal can be used to design novel reconfigurable logic circuits in the near future.

关键词: spin—orbit torque (SOT), field-like torque, magnetization switching, perpendicular magnetization

Abstract: Spin—orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized for inducing various modes of magnetization switching. However, it is a challenge that so many multiple modes of magnetization switching are integrated together. Here we propose a method of implementing both unipolar switching and bipolar switching of the perpendicular magnetization within a single SOT device. The mode of switching can be easily changed by tuning the amplitude of the applied current. We show that the field-like torque plays an important role in switching process. The field-like torque induces the precession of the magnetization in the case of unipolar switching, however, the field-like torque helps to generate an effective z-component torque in the case of bipolar switching. In addition, the influence of key parameters on the mode of switching is discussed, including the field-like torque strength, the bias field, and the current density. Our proposal can be used to design novel reconfigurable logic circuits in the near future.

Key words: spin—orbit torque (SOT), field-like torque, magnetization switching, perpendicular magnetization

中图分类号:  (Magnetization reversal mechanisms)

  • 75.60.Jk
75.78.Jp (Ultrafast magnetization dynamics and switching) 85.75.Dd (Magnetic memory using magnetic tunnel junctions) 75.70.Tj (Spin-orbit effects)