中国物理B ›› 1999, Vol. 8 ›› Issue (12): 932-937.doi: 10.1088/1004-423X/8/12/009

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GROWTH MODEL OF TEXTURED DIAMOND (111) FILM IN CH4/O2/H2 ATMOSPHERE

刘技文1, 武瑾2, 谢仿卿2, 张青哲2, 陈有存2, 林彰达2   

  1. (1)College of Material Science and Engineering, Tianjin University, Tianjin 300092, China; (2)State Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 收稿日期:1999-04-29 出版日期:1999-12-15 发布日期:2005-06-29
  • 基金资助:
    Project supported by the National Natural Science Foundation of China(Grant No.59632010)

GROWTH MODEL OF TEXTURED DIAMOND (111) FILM IN CH4/O2/H2 ATMOSPHERE

WU JIN (武瑾)1, XIE FANG-QING (谢仿卿)1, ZHANG QING-ZHE (张青哲)1, LIU JI-WEN (刘技文)2, CHEN YOU-CUN (陈有存)1, LIN ZHANG-DA (林彰达)1   

  1. 1 State Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;
    2 College of Material Science and Engineering, Tianjin University, Tianjin 300092, China
  • Received:1999-04-29 Online:1999-12-15 Published:2005-06-29
  • Supported by:
    Project supported by the National Natural Science Foundation of China(Grant No.59632010)

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摘要： Partially oriented and highly textured diamond films on Si( 111 ) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5×108cm-2 was realiged in 3 min by near-surface glow discharge. The os-grown films were characterized by scanning electron microscopy(SEM), X-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH4/H2, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond (111) surface was demonstrated to be in Stranski-Krastanov model by SEM.

Abstract: Partially oriented and highly textured diamond films on Si( 111 ) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5×108cm-2 was realiged in 3 min by near-surface glow discharge. The os-grown films were characterized by scanning electron microscopy(SEM), X-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH4/H2, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond (111) surface was demonstrated to be in Stranski-Krastanov model by SEM.

中图分类号:  (Nucleation and growth)

  • 68.55.A-
68.47.Fg (Semiconductor surfaces) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 52.80.Hc (Glow; corona) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 78.30.Am (Elemental semiconductors and insulators)