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Siwen You(游思雯), Ziyi Shao(邵子依), Xiao Guo(郭晓), Junjie Jiang(蒋俊杰), Jinxin Liu(刘金鑫), Kai Wang(王凯), Mingjun Li(李明君), Fangping Ouyang(欧阳方平), Chuyun Deng(邓楚芸), Fei Song(宋飞), Jiatao Sun(孙家涛), and Han Huang(黄寒). Growth behaviors and emission properties of Co-deposited MAPbI3 ultrathin films on MoS2[J]. 中国物理B, 2023, 32(1): 17901-017901. |
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Taofei Pu(蒲涛飞), Shuqiang Liu(刘树强), Xiaobo Li(李小波), Ting-Ting Wang(王婷婷), Jiyao Du(都继瑶), Liuan Li(李柳暗), Liang He(何亮), Xinke Liu(刘新科), and Jin-Ping Ao(敖金平). Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator[J]. 中国物理B, 2022, 31(12): 127701-127701. |
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Baohe Yuan(袁保合), Xiang Yuan(袁祥), Binger Zhang(张冰儿), Zheng An(安政), Shijun Luo(罗世钧), and Lulu Chen(陈露露). Lithium ion batteries cathode material: V2O5[J]. 中国物理B, 2022, 31(3): 38203-038203. |
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Zhengwei Xiong(熊政伟), Xuemei An(安雪梅), Qian Liu(刘倩), Jiayi Zhu(朱家艺), Xiaoqiang Zhang(张小强), Chenchun Hao(郝辰春), Qiang Yang(羊强), Zhipeng Gao(高志鹏), and Meng Zhang(张盟). Morphological effect on electrochemical performance of nanostructural CrN[J]. 中国物理B, 2021, 30(12): 128201-128201. |
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Jiyu Dong(董继宇), Kang Lin(林康), Congpu Mu(牟从普), Zhiyan Jia(贾智研), Jin Xu(徐瑾), Anmin Nie(聂安民), Bochong Wang(王博翀), Jianyong Xiang(向建勇), Fusheng Wen(温福昇), Kun Zhai(翟昆), Tianyu Xue(薛天宇), and Zhongyuan Liu(柳忠元). Photoemission oscillation in epitaxially grown van der Waals β-In2Se3/WS2 heterobilayer bubbles[J]. 中国物理B, 2021, 30(11): 117901-117901. |
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王振华, 高翾, 张志东. Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures[J]. 中国物理B, 2018, 27(10): 107901-107901. |
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宋化鼎, 盛典, 王安琦, 李金光, 俞大鹏, 廖志敏. Topological transport in Dirac electronic systems: A concise review[J]. 中国物理B, 2017, 26(3): 37301-037301. |
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