中国物理B ›› 1996, Vol. 5 ›› Issue (2): 143-150.doi: 10.1088/1004-423X/5/2/007

• 8000 CROSSDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    

GROWTH OF PREFERENTIALLY ORIENTED CUBIC BORON NITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION

郭永平, 宋志忠, 李公川, 陈光华   

  1. Department of Physics, Lanzhou University, Lanzhou 730000, China
  • 收稿日期:1994-11-23 出版日期:1996-02-20 发布日期:1996-02-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

GROWTH OF PREFERENTIALLY ORIENTED CUBIC BORON NITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION

GUO YONG-PING (郭永平), SONG ZHI-ZHONG (宋志忠), LI GONG-CHUAN (李公川), CHEN GUANG-HUA (陈光华)   

  1. Department of Physics, Lanzhou University, Lanzhou 730000, China
  • Received:1994-11-23 Online:1996-02-20 Published:1996-02-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

摘要: Preferentially oriented cubic boron nitride films on nickel substrates have been grown using hot-filament-assisted rf plasma chemical vapor deposition method. X-ray photoelectron spectroscopy shows that the cubic boron nitride films are stoichiometric. Scanning electron microscopy and X-ray diffraction show that the films are of high quality with well-faceted and (220) preferentially oriented grains, without X-ray diffraction detectable hexagonal boron nitride phase. The nucleation and growth process has been investigated. After 40min deposition, well aligned, well faceted cubic boron nitride nuclei can be seen on the substrnies, and after 2 h deposition, the rectangular grains can be seen on the substrate with their corresponding edges parallel to each other in scanning electron microscopic images. The ratio of the diffraction peak height of (220) face to that of (111) face is about 5.2 in the X-ray diffraction pattern, but the corresponding value of the random cubic boron nitride crystallites is only 0.06.

Abstract: Preferentially oriented cubic boron nitride films on nickel substrates have been grown using hot-filament-assisted rf plasma chemical vapor deposition method. X-ray photoelectron spectroscopy shows that the cubic boron nitride films are stoichiometric. Scanning electron microscopy and X-ray diffraction show that the films are of high quality with well-faceted and (220) preferentially oriented grains, without X-ray diffraction detectable hexagonal boron nitride phase. The nucleation and growth process has been investigated. After 40min deposition, well aligned, well faceted cubic boron nitride nuclei can be seen on the substrnies, and after 2 h deposition, the rectangular grains can be seen on the substrate with their corresponding edges parallel to each other in scanning electron microscopic images. The ratio of the diffraction peak height of (220) face to that of (111) face is about 5.2 in the X-ray diffraction pattern, but the corresponding value of the random cubic boron nitride crystallites is only 0.06.

中图分类号:  (Nucleation and growth)

  • 68.55.A-
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 79.60.Bm (Clean metal, semiconductor, and insulator surfaces) 68.55.-a (Thin film structure and morphology) 61.05.cp (X-ray diffraction) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC))