中国物理B ›› 1995, Vol. 4 ›› Issue (10): 757-765.doi: 10.1088/1004-423X/4/10/004

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

STUDY OF THE MECHANISM OF GaAs(001) MOLECULAR-BEAM EPITAXY

茅惠兵, 陆卫, 沈学础   

  1. National Laboratory for Infrared Physics, Academia Sinica, Shanghai 200083, China
  • 收稿日期:1994-09-06 出版日期:1995-10-20 发布日期:1995-10-20

STUDY OF THE MECHANISM OF GaAs(001) MOLECULAR-BEAM EPITAXY

MAO HUI-BING (茅惠兵), LU WEI (陆卫), SHEN XUE-CHU (沈学础)   

  1. National Laboratory for Infrared Physics, Academia Sinica, Shanghai 200083, China
  • Received:1994-09-06 Online:1995-10-20 Published:1995-10-20

PDF (PC)

379

赞

摘要： In this paper the nucleation and growth processes of GaAs(001) molecular-beam epitaxy were studied by Monte Carlo simulation, The density of islands and the density of isolated Ga adatoms were obtained for different growth temperatures, and the island size distribution at low coverage, as well as the correlation function between atoms and its relation with the temperature were studied in detail.

Abstract: In this paper the nucleation and growth processes of GaAs(001) molecular-beam epitaxy were studied by Monte Carlo simulation, The density of islands and the density of isolated Ga adatoms were obtained for different growth temperatures, and the island size distribution at low coverage, as well as the correlation function between atoms and its relation with the temperature were studied in detail.

中图分类号:  (Nucleation and growth)

  • 68.55.A-
81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)