中国物理B ›› 1994, Vol. 3 ›› Issue (3): 208-215.doi: 10.1088/1004-423X/3/3/007

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PHOTOELECTRON SPECTROSCOPIC STUDY OF THE EFFECT OF Cs INTRALAYER ON THE BAND LINEUP OF Ge/InP(100) HETEROJUNCTION

许振嘉1, 徐世红2, 徐彭寿2, 朱警生2, 刘先明2, 张裕恒2   

  1. (1)Institute of Semiconductor, Academia Sinica, Beijing 100083, China; (2)Laboratory of Structure Analysis, University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:1993-03-03 出版日期:1994-03-20 发布日期:1994-03-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China and the Laboratory of Structure Analysis, University of Science and Technology of China.

PHOTOELECTRON SPECTROSCOPIC STUDY OF THE EFFECT OF Cs INTRALAYER ON THE BAND LINEUP OF Ge/InP(100) HETEROJUNCTION

XU SHI-HONG (徐世红)a, XU PENG-SHOU (徐彭寿)a, ZHU JING-SHENG (朱警生)a, LIU XIAN-MING (刘先明)a, ZHANG YU-HENG (张裕恒)a, XU ZHEN-JIA (许振嘉)b   

  1. a Laboratory of Structure Analysis, University of Science and Technology of China, Hefei 230026, China; b Institute of Semiconductor, Academia Sinica, Beijing 100083, China
  • Received:1993-03-03 Online:1994-03-20 Published:1994-03-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China and the Laboratory of Structure Analysis, University of Science and Technology of China.

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摘要： The formation and band lineup of the Ge/InP(100) interface with or without alkali metal Cs intralayer (IL) are studied by means of X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). It is found that the Cs atoms do not react with or diffuse into the subatrate and the Ge overlayer. The thin Cs IL will induce an increase of the valence band offset (ΔEv) for the Ge/InP(100) heterojunction. The changes of ΔEv are proportional to the IL thickness and them saturate for IL thickness of about one half of a monolayer of Cs IL. Without the IL, ΔEv of the Ge/InP(100) heterojunction is equal to 0.70eV, and ΔEv with one half of monolayer IL is up to 0.90eV. These results show that the interface dipole plays a major role in the band lineup at the heterojunction interface.

Abstract: The formation and band lineup of the Ge/InP(100) interface with or without alkali metal Cs intralayer (IL) are studied by means of X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). It is found that the Cs atoms do not react with or diffuse into the subatrate and the Ge overlayer. The thin Cs IL will induce an increase of the valence band offset ($\Delta$Ev) for the Ge/InP(100) heterojunction. The changes of $\Delta$Ev are proportional to the IL thickness and them saturate for IL thickness of about one half of a monolayer of Cs IL. Without the IL, $\Delta$Ev of the Ge/InP(100) heterojunction is equal to 0.70eV, and $\Delta$Ev with one half of monolayer IL is up to 0.90eV. These results show that the interface dipole plays a major role in the band lineup at the heterojunction interface.

中图分类号:  (Interfaces; heterostructures; nanostructures)

  • 79.60.Jv
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)