中国物理B ›› 1996, Vol. 5 ›› Issue (3): 207-212.doi: 10.1088/1004-423X/5/3/007

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SOFT-X-RAY PHOTOEMISSION STUDY OF Mn/GaP(100) INTERFACE

徐世红1, 杨风源2, 徐彭寿3, 陆尔东3, 余小江3, 张新夷3   

  1. (1)Also Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, China; (2)Department of Physics, University of Science and Technology of China, Hefei 230026, China; (3)Natiotnal Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:1995-03-11 出版日期:1996-03-20 发布日期:1996-03-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

SOFT-X-RAY PHOTOEMISSION STUDY OF Mn/GaP(100) INTERFACE

XU SHI-HONG (徐世红)a, XU PENG-SHOU (徐彭寿), LU ER-DONG (陆尔东), YU XIAO-JIANG (余小江), ZHANG XIN-YI (张新夷), YANG FENG-YUAN (杨风源)   

  1. Natiotnal Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China; a Also Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, China
  • Received:1995-03-11 Online:1996-03-20 Published:1996-03-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： The interface formation and electronic structures of the Mn/GaP(100) interface are studied with synchrotron radiation photoemission, At the early stage of Mn deposition, Mn covers the whole GAP(100) surface. With the increase of coverage, Ga atoms can be exchanged by Mn atoms and diffuse into the Mn overLaycr. However, P atoms remain always near the interracial region. A sigaificant difference of the electronic structures is observed between the ultra-thin and the thick Mn films. The explanations for this are given in the text.

Abstract: The interface formation and electronic structures of the Mn/GaP(100) interface are studied with synchrotron radiation photoemission, At the early stage of Mn deposition, Mn covers the whole GAP(100) surface. With the increase of coverage, Ga atoms can be exchanged by Mn atoms and diffuse into the Mn overLaycr. However, P atoms remain always near the interracial region. A sigaificant difference of the electronic structures is observed between the ultra-thin and the thick Mn films. The explanations for this are given in the text.

中图分类号:  (Interfaces; heterostructures; nanostructures)

  • 79.60.Jv
73.20.At (Surface states, band structure, electron density of states) 68.43.Mn (Adsorption kinetics ?) 68.47.Fg (Semiconductor surfaces)