中国物理B ›› 1993, Vol. 2 ›› Issue (5): 365-375.doi: 10.1088/1004-423X/2/5/005

• • 上一篇    下一篇

THE INTERACTION OF Au AND THE Si/SiO2 INTERFACE DEFECT Hit(0.494)

陈开茅1, 元民华1, 武兰青1, 刘鸿飞2   

  1. (1)Department of Physics, Peking University, Beijing 100871, China; (2)Research Institute for Nonferrous Metal, Beijing 100088,China
  • 收稿日期:1992-09-09 出版日期:1993-05-20 发布日期:1993-05-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

THE INTERACTION OF Au AND THE Si/SiO2 INTERFACE DEFECT Hit(0.494)

LIU HONG-FEI (刘鸿飞)a, CHEN KAI-MAO (陈开茅)b, YUAN MIN-HUA (元民华)b, WU LAN-QING (武兰青)b   

  1. a General Research Institute for Nonferrous Metal, Beijing 100088, China; b Department of Physics, Peking University, Beijing 100871, China
  • Received:1992-09-09 Online:1993-05-20 Published:1993-05-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

PDF (PC)

407

赞

摘要： The defects at the Si/SiO2 interface have been studied by the deep-level transient spectroscopy (DLTS) technique in p-type MOS structures with and without gold diffusion. The experimental results show that the interaction of gold and Si/SiO2 interface defect,Hit(0.494), results in the formation of a new interface de-fect, Au-Hit(0.445). Just like the interface defect, Hit(0.494), the new interface defect possesses a few interesting properties, for example, when the gate voltage applied across the MOS structure reduces the energy interval between Fermi-level and Si valence band of the Si surface to values smaller than the hole ionization Gibbs free energy of the defect, a sharp DLTS peak is still observable; and the hole apparent activation energy increases with the decrease of the Si surface potential barrier height. These properties can be successfully explained with the transition energy band model of the Si/SiO2 interface.

Abstract: The defects at the Si/SiO2 interface have been studied by the deep-level transient spectroscopy (DLTS) technique in p-type MOS structures with and without gold diffusion. The experimental results show that the interaction of gold and Si/SiO2 interface defect, Hit(0.494), results in the formation of a new interface de-fect, Au-Hit(0.445). Just like the interface defect, Hit(0.494), the new interface defect possesses a few interesting properties, for example, when the gate voltage applied across the MOS structure reduces the energy interval between Fermi-level and Si valence band of the Si surface to values smaller than the hole ionization Gibbs free energy of the defect, a sharp DLTS peak is still observable; and the hole apparent activation energy increases with the decrease of the Si surface potential barrier height. These properties can be successfully explained with the transition energy band model of the Si/SiO2 interface.

中图分类号:  (Impurity and defect levels)

  • 71.55.-i
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.20.Hb (Impurity and defect levels; energy states of adsorbed species) 66.30.J- (Diffusion of impurities ?)