First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory

doi:10.1088/1674-1056/23/12/127301

›› 2014, Vol. 23 ›› Issue (12): 127301-127301.doi: 10.1088/1674-1056/23/12/127301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory

赵晶^{a b}, 董静雨^a, 任书霞^{a c}, 张礼勇^a, 赵旭^a, 陈伟^a

a Key Laboratory of Advanced Films of Hebei Province, College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024, China;
b Department of Physics and Electrical Engineering, Handan College, Handan 056005, China;
c School of Material Science and Engineering, Shijiazhuang TieDao University, Shijiazhuang 050043, China

收稿日期:2014-07-30 修回日期:2014-08-30 出版日期:2014-12-15 发布日期:2014-12-15
基金资助:
Project supported by the Natural Science Foundation of Hebei Province, China (Grant Nos. A2013205149 and E2013210133) and the Hebei Provincial Education Department, China (Grant Nos. ZH2012067 and 2011170).

First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory

Zhao Jing (赵晶)^{a b}, Dong Jing-Yu (董静雨)^a, Ren Shu-Xia (任书霞)^{a c}, Zhang Li-Yong (张礼勇)^a, Zhao Xu (赵旭)^a, Chen Wei (陈伟)^a

a Key Laboratory of Advanced Films of Hebei Province, College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024, China;
b Department of Physics and Electrical Engineering, Handan College, Handan 056005, China;
c School of Material Science and Engineering, Shijiazhuang TieDao University, Shijiazhuang 050043, China

Received:2014-07-30 Revised:2014-08-30 Online:2014-12-15 Published:2014-12-15
Contact: Chen Wei E-mail:chen07308@mail.hebtu.edu.cn
Supported by:
Project supported by the Natural Science Foundation of Hebei Province, China (Grant Nos. A2013205149 and E2013210133) and the Hebei Provincial Education Department, China (Grant Nos. ZH2012067 and 2011170).

摘要/Abstract

摘要： Oxygen vacancy plays a crucial role in resistive switching. To date, a quantitative study about the distribution of the oxygen vacancies and its effect on the resistive switching has not yet been reported. In this study, we report our first-principles calculations in ZnO-based resistive switching memory grown on a Pt substrate. We show that the oxygen vacancies prefer to be located in the ZnO (0001) plane, i.e. in the direction parallel to the film surface in the preparation process. These oxygen vacancies drift easily in the film when a voltage is applied in the SET process and prefer to form a line defect perpendicular to the film surface. An isolated oxygen vacancy makes little contribution to the conductivity of ZnO, whereas the ordering of oxygen vacancies in the direction perpendicular to the film surface leads to a dramatic enhancement of the conductivity and thus forms conductive filaments. The semiconducting characteristics of the conductive filaments are confirmed experimentally.

关键词: first-principles calculations, resistive switching, conductive filament, oxygen-vacancy ordering

Abstract: Oxygen vacancy plays a crucial role in resistive switching. To date, a quantitative study about the distribution of the oxygen vacancies and its effect on the resistive switching has not yet been reported. In this study, we report our first-principles calculations in ZnO-based resistive switching memory grown on a Pt substrate. We show that the oxygen vacancies prefer to be located in the ZnO (0001) plane, i.e. in the direction parallel to the film surface in the preparation process. These oxygen vacancies drift easily in the film when a voltage is applied in the SET process and prefer to form a line defect perpendicular to the film surface. An isolated oxygen vacancy makes little contribution to the conductivity of ZnO, whereas the ordering of oxygen vacancies in the direction perpendicular to the film surface leads to a dramatic enhancement of the conductivity and thus forms conductive filaments. The semiconducting characteristics of the conductive filaments are confirmed experimentally.

Key words: first-principles calculations, resistive switching, conductive filament, oxygen-vacancy ordering

中图分类号: (Electronic structure of nanoscale materials and related systems)

73.22.-f

73.61.-r (Electrical properties of specific thin films) 71.55.-i (Impurity and defect levels)

赵晶, 董静雨, 任书霞, 张礼勇, 赵旭, 陈伟. First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory[J]. , 2014, 23(12): 127301-127301.

Zhao Jing (赵晶), Dong Jing-Yu (董静雨), Ren Shu-Xia (任书霞), Zhang Li-Yong (张礼勇), Zhao Xu (赵旭), Chen Wei (陈伟). First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory[J]. Chin. Phys. B, 2014, 23(12): 127301-127301.

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First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory

First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory

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