Electronic structures of impurities and point defects in semiconductors

doi:10.1088/1674-1056/27/11/117103

摘要/Abstract

摘要：

A brief history of the impurity theories in semiconductors is provided. A bound exciton model is proposed for both donor-and acceptor-like impurities and point defects, which offers a unified understanding for “shallow” and “deep” impurities and point defects. The underlying physics of computational results using different density-functional theory-based approaches are discussed and interpreted in the framework of the bound exciton model.

关键词: semiconductor, shallow impurity, deep impurity, bound exciton, density-functional theory, effective-mass theory, hydrogen model

Abstract:

Key words: semiconductor, shallow impurity, deep impurity, bound exciton, density-functional theory, effective-mass theory, hydrogen model

中图分类号: (Impurity and defect levels)

71.55.-i

72.20.-i (Conductivity phenomena in semiconductors and insulators) 78.20.-e (Optical properties of bulk materials and thin films)

张勇. Electronic structures of impurities and point defects in semiconductors[J]. 中国物理B, 2018, 27(11): 117103-117103.

Yong Zhang(张勇). Electronic structures of impurities and point defects in semiconductors[J]. Chin. Phys. B, 2018, 27(11): 117103-117103.

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