Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction

doi:10.1088/1674-1056/26/12/127309

中国物理B ›› 2017, Vol. 26 ›› Issue (12): 127309-127309.doi: 10.1088/1674-1056/26/12/127309

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction

Yuan-Hao Miao(苗渊浩), Hui-Yong Hu(胡辉勇), Xin Li(李鑫), Jian-Jun Song(宋建军), Rong-Xi Xuan(宣荣喜), He-Ming Zhang(张鹤鸣)

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2017-04-24 修回日期:2017-09-05 出版日期:2017-12-05 发布日期:2017-12-05
通讯作者: Yuan-Hao Miao, Hui-Yong Hu E-mail:15336118340@163.com;huhy@xidian.edu.cn
基金资助:
Project supported by the Research Plan in Shaanxi Province, China (Grant No. 2016GY-085), the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (Grant No. 90109162905), the Fundamental Research Funds for the Central Universities (Grant No. 17-H863-04-ZT-001-019-01), and the National Natural Science Foundation of China (Grant Nos. 61704130 and 61474085).

Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction

Yuan-Hao Miao(苗渊浩), Hui-Yong Hu(胡辉勇), Xin Li(李鑫), Jian-Jun Song(宋建军), Rong-Xi Xuan(宣荣喜), He-Ming Zhang(张鹤鸣)

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2017-04-24 Revised:2017-09-05 Online:2017-12-05 Published:2017-12-05
Contact: Yuan-Hao Miao, Hui-Yong Hu E-mail:15336118340@163.com;huhy@xidian.edu.cn
Supported by:
Project supported by the Research Plan in Shaanxi Province, China (Grant No. 2016GY-085), the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (Grant No. 90109162905), the Fundamental Research Funds for the Central Universities (Grant No. 17-H863-04-ZT-001-019-01), and the National Natural Science Foundation of China (Grant Nos. 61704130 and 61474085).

摘要/Abstract

摘要： The analysis of threading dislocation density (TDD) in Ge-on-Si layer is critical for developing lasers, light emitting diodes (LEDs), photodetectors (PDs), modulators, waveguides, metal oxide semiconductor field effect transistors (MOSFETs), and also the integration of Si-based monolithic photonics. The TDD of Ge epitaxial layer is analyzed by etching or transmission electron microscope (TEM). However, high-resolution x-ray diffraction (HR-XRD) rocking curve provides an optional method to analyze the TDD in Ge layer. The theory model of TDD measurement from rocking curves was first used in zinc-blende semiconductors. In this paper, this method is extended to the case of strained Ge-on-Si layers. The HR-XRD 2θ/ω scan is measured and Ge (004) single crystal rocking curve is utilized to calculate the TDD in strained Ge epitaxial layer. The rocking curve full width at half maximum (FWHM) broadening by incident beam divergence of the instrument, crystal size, and curvature of the crystal specimen is subtracted. The TDDs of samples A and B are calculated to be 1.41×10⁸ cm^-2 and 6.47×10⁸ cm^-2, respectively. In addition, we believe the TDDs calculated by this method to be the averaged dislocation density in the Ge epitaxial layer.

关键词: HR-XRD, RPCVD, threading dislocation density (TDD), etching pit density (EPD)

Abstract: The analysis of threading dislocation density (TDD) in Ge-on-Si layer is critical for developing lasers, light emitting diodes (LEDs), photodetectors (PDs), modulators, waveguides, metal oxide semiconductor field effect transistors (MOSFETs), and also the integration of Si-based monolithic photonics. The TDD of Ge epitaxial layer is analyzed by etching or transmission electron microscope (TEM). However, high-resolution x-ray diffraction (HR-XRD) rocking curve provides an optional method to analyze the TDD in Ge layer. The theory model of TDD measurement from rocking curves was first used in zinc-blende semiconductors. In this paper, this method is extended to the case of strained Ge-on-Si layers. The HR-XRD 2θ/ω scan is measured and Ge (004) single crystal rocking curve is utilized to calculate the TDD in strained Ge epitaxial layer. The rocking curve full width at half maximum (FWHM) broadening by incident beam divergence of the instrument, crystal size, and curvature of the crystal specimen is subtracted. The TDDs of samples A and B are calculated to be 1.41×10⁸ cm^-2 and 6.47×10⁸ cm^-2, respectively. In addition, we believe the TDDs calculated by this method to be the averaged dislocation density in the Ge epitaxial layer.

Key words: HR-XRD, RPCVD, threading dislocation density (TDD), etching pit density (EPD)

中图分类号: (Metal and metallic alloys)

73.61.At

苗渊浩, 胡辉勇, 李鑫, 宋建军, 宣荣喜, 张鹤鸣. Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction[J]. 中国物理B, 2017, 26(12): 127309-127309.

Yuan-Hao Miao(苗渊浩), Hui-Yong Hu(胡辉勇), Xin Li(李鑫), Jian-Jun Song(宋建军), Rong-Xi Xuan(宣荣喜), He-Ming Zhang(张鹤鸣). Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction[J]. Chin. Phys. B, 2017, 26(12): 127309-127309.

参考文献 30

[1]	Soref R 2006 IEEE J. Sel. Topics Quantum Electron. 12 1678
[2]	Liow T Y, Ang K W and Fang Q 2010 IEEE J. Sel. Top. Quantum Electron. 16 307
[3]	Wang J and Lee S 2011 Sensors 11 696
[4]	Srinivasan S, Liu A Y and Liang D 2017 Fiber Opt. Commun. 739
[5]	Cheng R, Yin L and Wu H 2017 IEEE Electron Dev. Lett. 1 99
[6]	Nagatomi Y, Tateyama T and Tanaka S 2017 Semicond. Sci. Tech 32 035001
[7]	Arguirov T, Kittler M and Oehme M 2011 Solid State Phenomena Trans. Tech. Publications 178 25
[8]	Klapdor-Kleingrothaus H V, Krivosheina I V and Titkova I V 2006 Mod. Phys. Lett. A 21 1257
[9]	Kurtz A D, Kulin S A and Averbach B L 1956 Phys. Rev 101 1285
[10]	Hordon M J and Averbach B L 1961 Acta Metal. 9 237
[11]	Xu Z J 2012 Semiconductor Analysis and Detection, 2nd edn. (Beijing:Science Press) pp. 88-89(in Chinese)
[12]	Warren B E 1959 Prog. Metal Phys. 8 147
[13]	Scherrer P 1918 Nachrichten der Göttinger Gesellschaft 98 394
[14]	Halliwell M A G, Lyons M H and Hill M J 1984 J. Crystal Growth 68 523
[15]	Gay P, Hirsch P B and Kelly A 1953 Acta Metal. 1 315
[16]	Houghton D C, Gibbings C J and Tuppen C G 1990 Appl. Phys. Lett. 56 460
[17]	Huang S, Li C and Zhou Z 2012 Thin Solid Films 520 2307
[18]	Shah V A, Dobbie A and Myronov M 2011 Solid-State Electron. 62 189
[19]	Choi D, Ge Y and Harris J S 2008 J. Crystal Growth 310 4273
[20]	Shah V A, Dobbie A and Myronov M 2011 Thin Solid Films 519 7911
[21]	Hartmann J M, Papon A M and Destefanis V 2008 J. Crystal Growth 310 5287
[22]	Hartmann J M, Abbadie A and Cherkashin N 2009 Semicond. Sci. Technol. 24 055002
[23]	Tan Y H and Tan C S 2012 Thin Solid Films 520 2711
[24]	Chen D, Xue Z and Wei X 2014 Appl. Surf. Sci. 299 1
[25]	Lee K H, Jandl A and Tan Y H 2013 AIP Advances 3 092123
[26]	Nguyen V H, Dobbie A and Myronov M 2013 J. Appl. Phys 114 154306
[27]	Tan Y H, Bergkvist M and Tan C S 2012 ECS J. Solid State Sci. Technol. 1 117
[28]	Bian J T, Xue Z Y and Chen D 2012 ECS Trans. 45 195
[29]	Nguyen V H, Myronov M and Allred P 2014 IEEE 15th International Conference on Ultimate Integration on Silicon (ULIS) 121
[30]	Hartmann J M, Aubin J and Bogumilowicz Y 2016 ECS Trans. 75 579

Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction

Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 30

相关文章 12

Metrics

本文评价

推荐阅读 0

[1]	Tonghe Ying(应通和), Jianbao Zhu(朱健保), and Wenguang Zhu(朱文光). Machine learning potential aided structure search for low-lying candidates of Au clusters[J]. 中国物理B, 2022, 31(7): 78402-078402.
[2]	Zeyu Zhang(张泽宇), Qiang Zhang(张强), and Wenbo Mi(米文博). Anomalous Hall effect of facing-target sputtered ferrimagnetic Mn₄N epitaxial films with perpendicular magnetic anisotropy[J]. 中国物理B, 2022, 31(4): 47305-047305.
[3]	苗渊浩, 胡辉勇, 宋建军, 宣荣喜, 张鹤鸣. Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge_1-xSn_x films on Si (100) and Si (111)[J]. 中国物理B, 2017, 26(12): 127306-127306.
[4]	魏江镔, 池晓伟, 陆超, 王尘, 林光杨, 吴焕达, 黄巍, 李成, 陈松岩, 刘春莉. Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride[J]. 中国物理B, 2015, 24(7): 77306-077306.
[5]	丁进军, 吴少兵, 杨晓非, 朱涛. Localization correction to the anomalous Hall effect in amorphous CoFeB thin films[J]. , 2015, 24(2): 27201-027201.
[6]	李军建, 王国祥, 陈益敏, 沈祥, 聂秋华, 吕业刚, 戴世勋, 徐铁锋. Phase transformation in Mg–Sb₃Te thin films[J]. 中国物理B, 2014, 23(8): 87301-087301.
[7]	马维刚, 王海东, 张兴, TakahashiKoji. Different effects of grain boundary scattering on chargeand heat transport in polycrystalline platinum and goldnanofilms[J]. 中国物理B, 2009, 18(5): 2035-2040.
[8]	陈鹏, Takamura K. Magnetic and electrical properties of zincblende CrAs[J]. 中国物理B, 2008, 17(6): 2204-2207.
[9]	张建民, 徐可为. Yield strengths and stress induced crackles in copper films: effects of substrate and passivated layer[J]. 中国物理B, 2004, 13(2): 205-211.
[10]	葛洪良, 曾跃武, 冯春木, 叶高翔, 张其瑞. FRINGE EFFECT ON CRITICAL CURRENT OF A GOLD FILM PERCOLATION SYSTEM[J]. 中国物理B, 1997, 6(7): 526-530.
[11]	冯春木, 葛洪良, 叶高翔, 张其瑞. ELECTRICAL TRANSPORT BEHAVIOR OF AN Au DIFFUSE FRINGE FILM PERCOLATION SYSTEM[J]. 中国物理B, 1996, 5(7): 538-543.
[12]	叶高翔, 张其瑞, 文自立, 焦正宽, 张宣嘉, 许宇庆. THIRD-HARMONIC COEFFICIENT IN A BILATERAL ROUGH GOLD FILM PERCOLATION SYSTEM[J]. 中国物理B, 1996, 5(3): 213-218.