Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

doi:10.1088/1674-1056/24/5/057901

中国物理B ›› 2015, Vol. 24 ›› Issue (5): 57901-057901.doi: 10.1088/1674-1056/24/5/057901

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

侍铭^a, 陈平^a, 赵德刚^a, 江德生^a, 郑军^a, 成步文^a, 朱建军^a, 刘宗顺^a, 刘炜^a, 李翔^a, 赵丹梅^a, 王启明^a, 刘建平^b, 张书明^b, 杨辉^b

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

收稿日期:2014-10-15 修回日期:2014-12-05 出版日期:2015-05-05 发布日期:2015-05-05
基金资助:
Project Project of the Key Laboratory of Nano-devices and Applications, China (Grant No. 13ZS04), and the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017).

Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

Shi Ming (侍铭)^a, Chen Ping (陈平)^a, Zhao De-Gang (赵德刚)^a, Jiang De-Sheng (江德生)^a, Zheng Jun (郑军)^a, Cheng Bu-Wen (成步文)^a, Zhu Jian-Jun (朱建军)^a, Liu Zong-Shun (刘宗顺)^a, Liu Wei (刘炜)^a, Li Xiang (李翔)^a, Zhao Dan-Mei (赵丹梅)^a, Wang Qi-Ming (王启明)^a, Liu Jian-Ping (刘建平)^b, Zhang Shu-Ming (张书明)^b, Yang Hui (杨辉)^b

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received:2014-10-15 Revised:2014-12-05 Online:2015-05-05 Published:2015-05-05
Contact: Shi Ming, Chen Ping, Zhao De-Gang E-mail:dgzhao@red.semi.ac.cn
About author:79.60.Bm; 79.60.Dp; 79.70.+q; 79.90.+b
Supported by:
Project Project of the Key Laboratory of Nano-devices and Applications, China (Grant No. 13ZS04), and the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017).

摘要/Abstract

摘要： The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride (AlN) thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC (0001) substrate at 1100 ℃ by metal organic chemical vapor deposition (MOCVD) under low pressure. The I–V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I–V and Fowler–Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/μm and the maximum emission current density is 154 mA/cm² at 69.3 V for the Si-doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission.

关键词: AlN, field emission, cold cathode, negative electron affinity

Abstract: The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride (AlN) thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC (0001) substrate at 1100 ℃ by metal organic chemical vapor deposition (MOCVD) under low pressure. The I–V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I–V and Fowler–Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/μm and the maximum emission current density is 154 mA/cm² at 69.3 V for the Si-doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission.

Key words: AlN, field emission, cold cathode, negative electron affinity

中图分类号: (Clean metal, semiconductor, and insulator surfaces)

79.60.Bm

79.60.Dp (Adsorbed layers and thin films) 79.70.+q (Field emission, ionization, evaporation, and desorption) 79.90.+b (Other topics in electron and ion emission by liquids and solids and impact phenomena)

侍铭, 陈平, 赵德刚, 江德生, 郑军, 成步文, 朱建军, 刘宗顺, 刘炜, 李翔, 赵丹梅, 王启明, 刘建平, 张书明, 杨辉. Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage[J]. 中国物理B, 2015, 24(5): 57901-057901.

Shi Ming (侍铭), Chen Ping (陈平), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Zheng Jun (郑军), Cheng Bu-Wen (成步文), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Liu Wei (刘炜), Li Xiang (李翔), Zhao Dan-Mei (赵丹梅), Wang Qi-Ming (王启明), Liu Jian-Ping (刘建平), Zhang Shu-Ming (张书明), Yang Hui (杨辉). Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage[J]. Chin. Phys. B, 2015, 24(5): 57901-057901.

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Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

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