Resistive switching characteristics of Ti/ZrO2/Pt RRAM device

doi:10.1088/1674-1056/23/11/117305

中国物理B ›› 2014, Vol. 23 ›› Issue (11): 117305-117305.doi: 10.1088/1674-1056/23/11/117305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Resistive switching characteristics of Ti/ZrO₂/Pt RRAM device

雷晓艺^a, 刘红侠^a, 高海霞^a, 杨哈妮^b, 王国明^{c d}, 龙世兵^c, 马晓华^{a b}, 刘明^c

a Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
c Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
d Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, China

收稿日期:2014-03-25 修回日期:2014-05-30 出版日期:2014-11-15 发布日期:2014-11-15
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant Nos. 61106106, 11304237, 61376099, and 11235008), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant Nos. 20130203130002 and 20110203110012).

Resistive switching characteristics of Ti/ZrO₂/Pt RRAM device

Lei Xiao-Yi (雷晓艺)^a, Liu Hong-Xia (刘红侠)^a, Gao Hai-Xia (高海霞)^a, Yang Ha-Ni (杨哈妮)^b, Wang Guo-Ming (王国明)^{c d}, Long Shi-Bing (龙世兵)^c, Ma Xiao-Hua (马晓华)^{a b}, Liu Ming (刘明)^c

a Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
c Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
d Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, China

Received:2014-03-25 Revised:2014-05-30 Online:2014-11-15 Published:2014-11-15
Contact: Liu Hong-Xia E-mail:hxliu@mail.xidian.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant Nos. 61106106, 11304237, 61376099, and 11235008), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant Nos. 20130203130002 and 20110203110012).

摘要/Abstract

摘要：

In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO₂/Pt resistive switching memory devices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduction and the trap-controlled space charge limited current (SCLC) mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied: the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.

关键词: resistive random access memory (RRAM), resistive switching (RS), conductive filament (CF), compliance current

Abstract:

Key words: resistive random access memory (RRAM), resistive switching (RS), conductive filament (CF), compliance current

中图分类号: (Metal-insulator-metal structures)

73.40.Rw

77.80.Fm (Switching phenomena) 72.20.-i (Conductivity phenomena in semiconductors and insulators)

雷晓艺, 刘红侠, 高海霞, 杨哈妮, 王国明, 龙世兵, 马晓华, 刘明. Resistive switching characteristics of Ti/ZrO₂/Pt RRAM device[J]. 中国物理B, 2014, 23(11): 117305-117305.

Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Gao Hai-Xia (高海霞), Yang Ha-Ni (杨哈妮), Wang Guo-Ming (王国明), Long Shi-Bing (龙世兵), Ma Xiao-Hua (马晓华), Liu Ming (刘明). Resistive switching characteristics of Ti/ZrO₂/Pt RRAM device[J]. Chin. Phys. B, 2014, 23(11): 117305-117305.

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Resistive switching characteristics of Ti/ZrO₂/Pt RRAM device

Resistive switching characteristics of Ti/ZrO₂/Pt RRAM device

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