中国物理B ›› 2026, Vol. 35 ›› Issue (7): 77201-077201.doi: 10.1088/1674-1056/ae64d4

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Proximity-induced negative magnetoresistance and anomalous Hall effect in monolayer graphene/CrSBr heterojunctions

Bin Dai(戴彬)1,2,†, Ke Zhu(祝轲)2,†, Chenyu Bai(白晨宇)2,3,†, Yechao Han(韩烨超)3, Guojing Hu(胡国静)3, Ruwen Wang(王汝文)2,3, Senhao Lv(吕森浩)2, Haisen Liu(刘海森)1,2, Zhen Zhao(赵振)2, Jianchen Lu(卢建臣)1,‡, Hui Guo(郭辉)2,3,§, Haitao Yang(杨海涛)2,3, and Hong-Jun Gao(高鸿钧)2,3   

  1. 1 Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China;
    2 Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2026-03-12 修回日期:2026-04-21 接受日期:2026-04-27 发布日期:2026-07-10
  • 通讯作者: Jianchen Lu, Hui Guo E-mail:jclu@kust.edu.cn;guohui@iphy.ac.cn
  • 基金资助:
    The work is supported by the National Key Research and Development Program of China (Grant No. 2022YFA1204100), the National Natural Science Foundation of China (Grant Nos. 62488201 and 52572188), the Innovation Program of Quantum Science and Technology (Grant No. 2021ZD0302700), and the China Postdoctoral Science Foundation (Grant No. E5BK081).

Proximity-induced negative magnetoresistance and anomalous Hall effect in monolayer graphene/CrSBr heterojunctions

Bin Dai(戴彬)1,2,†, Ke Zhu(祝轲)2,†, Chenyu Bai(白晨宇)2,3,†, Yechao Han(韩烨超)3, Guojing Hu(胡国静)3, Ruwen Wang(王汝文)2,3, Senhao Lv(吕森浩)2, Haisen Liu(刘海森)1,2, Zhen Zhao(赵振)2, Jianchen Lu(卢建臣)1,‡, Hui Guo(郭辉)2,3,§, Haitao Yang(杨海涛)2,3, and Hong-Jun Gao(高鸿钧)2,3   

  1. 1 Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China;
    2 Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2026-03-12 Revised:2026-04-21 Accepted:2026-04-27 Published:2026-07-10
  • Contact: Jianchen Lu, Hui Guo E-mail:jclu@kust.edu.cn;guohui@iphy.ac.cn
  • Supported by:
    The work is supported by the National Key Research and Development Program of China (Grant No. 2022YFA1204100), the National Natural Science Foundation of China (Grant Nos. 62488201 and 52572188), the Innovation Program of Quantum Science and Technology (Grant No. 2021ZD0302700), and the China Postdoctoral Science Foundation (Grant No. E5BK081).

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摘要： The integration of graphene with magnetic insulators to invoke the magnetic proximity effect provides a powerful route toward spintronic devices that preserve graphene’s exceptional transport characteristics. A persistent challenge, however, is the identification of magnetic substrates that are both air-stable and capable of forming high-quality van der Waals interfaces. Here, we present a magnetotransport investigation of monolayer graphene coupled to a layered A-type antiferromagnetic semiconductor CrSBr nanoflake, which is notable for its high Néel temperature (~132 K) and outstanding environmental stability. High-quality heterojunctions are obtained via a dry-transfer technique to ensure an atomically clean interface. Pronounced negative magnetoresistance and anomalous Hall effect in graphene are observed, arising from the suppression of spin-disorder scattering induced by the proximity exchange field from the CrSBr layer. Moreover, the heterojunction exhibits clear two-frequency Shubnikov–de Haas oscillations, evidencing the emergence of Fermi surface reconstruction in the monolayer graphene. Our results demonstrate that antiferromagnetic CrSBr can impose a robust magnetic proximity effect that manipulates the spin degrees of freedom in graphene, opening new opportunities for spintronic functionalities in two-dimensional materials.

关键词: magnetic proximity effect, negative magnetoresistance, anomalous Hall effect, Shubnikov-de Haas oscillation

Abstract: The integration of graphene with magnetic insulators to invoke the magnetic proximity effect provides a powerful route toward spintronic devices that preserve graphene’s exceptional transport characteristics. A persistent challenge, however, is the identification of magnetic substrates that are both air-stable and capable of forming high-quality van der Waals interfaces. Here, we present a magnetotransport investigation of monolayer graphene coupled to a layered A-type antiferromagnetic semiconductor CrSBr nanoflake, which is notable for its high Néel temperature (~132 K) and outstanding environmental stability. High-quality heterojunctions are obtained via a dry-transfer technique to ensure an atomically clean interface. Pronounced negative magnetoresistance and anomalous Hall effect in graphene are observed, arising from the suppression of spin-disorder scattering induced by the proximity exchange field from the CrSBr layer. Moreover, the heterojunction exhibits clear two-frequency Shubnikov–de Haas oscillations, evidencing the emergence of Fermi surface reconstruction in the monolayer graphene. Our results demonstrate that antiferromagnetic CrSBr can impose a robust magnetic proximity effect that manipulates the spin degrees of freedom in graphene, opening new opportunities for spintronic functionalities in two-dimensional materials.

Key words: magnetic proximity effect, negative magnetoresistance, anomalous Hall effect, Shubnikov-de Haas oscillation

中图分类号:  (Electronic transport in graphene)

  • 72.80.Vp
73.43.Qt (Magnetoresistance) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)