Spin-bias-controlled current rectification and negative magnetoresistance in a quantum dot spin transistor

doi:10.1088/1674-1056/ae1017

摘要/Abstract

摘要： We propose a spin-bias-controlled quantum-dot spin-valve device and systematically investigate its charge and spin transport properties. Numerical results reveal that the parallel magnetic configuration enables gate-tunable rectification of both charge and spin currents, whereas no rectification occurs in the antiparallel configuration. Remarkably, in specific gate voltage regimes, the device achieves perfect charge rectification — characterized by complete suppression of reverse-bias charge currents — while sustaining finite spin currents. Furthermore, a negative magnetoresistance emerges in this system, electrically tunable to its theoretical minimum of $-1$, accompanied by an antiparallel to parallel current on/off ratio exceeding $10^{6}$. This behavior implies that within tailored gate voltage regimes, only the antiparallel configuration permits charge conduction, with electron current entirely blocked in the parallel configuration. These results establish spin-bias-driven quantum dot systems as multifunctional platforms for tunable rectification and magnetoresistance control, highlighting their potential for advancing spintronic technologies.

关键词: quantum dot, spin diode, spin valve

Abstract: We propose a spin-bias-controlled quantum-dot spin-valve device and systematically investigate its charge and spin transport properties. Numerical results reveal that the parallel magnetic configuration enables gate-tunable rectification of both charge and spin currents, whereas no rectification occurs in the antiparallel configuration. Remarkably, in specific gate voltage regimes, the device achieves perfect charge rectification — characterized by complete suppression of reverse-bias charge currents — while sustaining finite spin currents. Furthermore, a negative magnetoresistance emerges in this system, electrically tunable to its theoretical minimum of $-1$, accompanied by an antiparallel to parallel current on/off ratio exceeding $10^{6}$. This behavior implies that within tailored gate voltage regimes, only the antiparallel configuration permits charge conduction, with electron current entirely blocked in the parallel configuration. These results establish spin-bias-driven quantum dot systems as multifunctional platforms for tunable rectification and magnetoresistance control, highlighting their potential for advancing spintronic technologies.

Key words: quantum dot, spin diode, spin valve

中图分类号: (Spin polarized transport)

72.25.-b

72.25.Dc (Spin polarized transport in semiconductors) 72.25.Hg (Electrical injection of spin polarized carriers) 73.21.La (Quantum dots)

Zhengzhong Zhang(张正中), Han Hu(胡涵), Runze Zhu(朱润泽), Yanzong Wang(王延宗), and Hao Liu(刘昊). Spin-bias-controlled current rectification and negative magnetoresistance in a quantum dot spin transistor[J]. 中国物理B, 2026, 35(7): 77202-077202.

参考文献

[1] Žutić I, Fabian J and Sarma S D 2004 Rev. Mod. Phys. 76 323
[2] Pulizzi F 2012 Nat. Mater. 11 367
[3] Xiao J Q, Jiang J S and Chien C L 1992 Phys. Rev. Lett. 68 3749
[4] Sinova J, Valenzuela S O, Wunderlich J, Back C H and Jungwirth T 2015 Rev. Mod. Phys. 87 1213
[5] Ramaswamy R, Lee J M, Cai K and Yang H 2018 Appl. Phys. Rev. 5 031107
[6] Mostufa S, Liang S, Chugh V K, Wang J P and Wu K 2024 npj Spintronics 2 26
[7] Leitao D C, van Riel F J F, Rasly M, Araujo P D R, Salvador M, Paz E and Koopmans B 2024 npj Spintronics 2 54
[8] Železný J, Wadley P, Olejník K, Hoffmann A and Ohno H 2018 Nat. Phys. 14 220
[9] Sun D L, Yin L F, Sun C J, Guo H W, Gai Z, Zhang X G, Ward T Z, Cheng Z H and Shen J 2010 Phys. Rev. Lett. 104 236602
[10] Cardoso C, Soriano D, García-Martínez N A and Fernández-Rossier J 2018 Phys. Rev. Lett. 121 067701
[11] Worledge D C and Hu G H 2024 Nat. Rev. Electr. Eng. 1 730
[12] Xu H W, Wang H, Zhou J and Li J 2021 Nat. Commun. 12 4330
[13] Liu C J, Luo Y M, Hong D S, Zhang S S L, Saglam H, Li Y, Lin Y L, Fisher B, Pearson J E, Jiang J S, Zhou H, Wen J, Hoffmann A and Bhatta-charya A 2021 Sci. Adv. 7 1669
[14] Safranski C, Barsukov I, Lee H K, Schneider T, Jara A A, Smith A, Chang H, Lenz K, Lindner J, Tserkovnyak Y, Wu M and Krivorotov I N 2017 Nat. Commun. 8 117
[15] Uchida K, Takahashi S, Harii K, Ieda J, Koshibae W, Ando K, Maekawa S and Saitoh E 2008 Nature 455 778
[16] Naka M, Motome Y and Seo H 2021 Phys. Rev. B 103 125114
[17] Abdelwahab I, Kumar D, Bian T, Zheng H N, Gao H, Hu F R, McClelland A, Leng K, Wilson W L and Loh K P 2024 Science 385 311
[18] Strambini E, Spies M, Ligato N, Ilić S, Rouco M, González-Orellana C, Ilyn M, Rogero C, Bergeret F S, Moodera J S, Virtanen P, Heikkilä T T and Giazotto F 2022 Nat. Commun. 13 2431
[19] Nadeem M, Fuhrer M S and Wang X L 2023 Nat. Rev. Phys. 5 558
[20] Eisenstein J P, Pfeiffer L N and West K W 2017 Phys. Rev. Lett. 118 186801
[21] Balachandran V, Benenti G, Pereira E, Casati G and Poletti D 2018 Phys. Rev. Lett. 120 200603
[22] Merchant C A and Markovic N 2008 Phys. Rev. Lett. 100 156601
[23] Iovan A, Andersson S, Naidyuk Y G, Vedyaev A, Dieny B and Korenivski V 2008 Nano Lett. 8 805
[24] Sasioǧlu E, Aull T, Kutschabsky D, Blügel S and Mertig I 2020 Phys. Rev. Appl. 14 014082
[25] Manipatruni S, Nikonov D E and Young I A 2018 Nat. Phys. 14 338
[26] Chang F J, Lin J G and Huang S Y 2017 Phys. Rev. Mater. 1 031401
[27] Barts E, Tenzin K and Sławińska J 2025 Nat. Commun. 16 4056
[28] Seki S, Ideue T, Kubota M, Kozuka Y, Takagi R, Nakamura M, Kaneko Y, Kawasaki M and Tokura Y 2015 Phys. Rev. Lett. 115 266601
[29] Han W, Maekawa S and Xie X C 2020 Nat. Mater. 19 139
[30] Sun Q F and Xie X C 2015 Appl. Phys. Lett. 106 182407
[31] Zheng J, Chi F and Guo Y 2018 Appl. Phys. Lett. 113 112404
[32] Bo R, Zhang Z Z, Tang Y, Guo Y and Liu H 2023 Appl. Phys. Express 16 083001
[33] Chi F and Sun Q F 2010 Phys. Rev. B 81 075310
[34] Vandersypen L M K, Bluhm H, Clarke J S, Dzurak A S, Ishihara R, Morello A, Reilly D J, Schreiber L R and Veldhorst M 2017 npj Quantum Inf. 3 34
[35] Fedorov P, Soldatov I, Neu V, Schäfer R, Schmidt O G and Karnaushenko D 2024 Nat. Commun. 15 2048
[36] Ciriano-Tejel V N, Fogarty M A, Schaal S, Hutin L, Bertrand B, Ibberson L, Gonzalez-Zalba M F, Li J, Niquet Y M, Vinet M and Morton J J L 2021 PRX Quantum 2 010353
[37] Burkard G, Ladd Th D, Pan A, Nichol J M and Petta J R 2023 Rev. Mod. Phys. 95 025003
[38] Manchon A, Železny J, Miron I M, Jungwirth T, Sinova J, Thiaville A, Garello K and Gambardella P 2019 Rev. Mod. Phys. 91 035004
[39] Hanson R, Kouwenhoven L P, Petta J R, Tarucha S and Vandersypen L M K 2007 Rev. Mod. Phys. 79 1217
[40] Hensen B, Huang W W, Yang C H, Chan K W, Yoneda J, Tanttu T, Hudson F E, Laucht A, Itoh K M, Ladd T D, Morello A and Dzurak A S 2020 Nat. Nanotechnol. 15 13
[41] Stano P, Fabian J and Jacquod P 2012 Phys. Rev. B 85 241301(R)
[42] Yang Z C, Sun Q F and Xie X C 2014 J. Phys.: Condens. Matter 26 045302
[43] Ramos E, Silva-Valencia J, Franco R, Siqueira E C and Figueira M S 2015 Physica E 74 334
[44] Jansen R, Spiesser A, Saito H, Fujita Y, Yamada S, Hamaya K and Yuasa S 2018 Phys. Rev. Appl. 10 064050
[45] Vera-Marun I J, Ranjan V and van Wees B J 2012 Nat. Phys. 8 313
[46] van ’t Erve O M J, Friedman A L, Cobas E, Li C H, Robinson J T and Jonker B T 2012 Nat. Nanotechnol. 7 737
[47] Sierra J F, Neumann I, Cuppens J, Raes B, Costache M V and Valenzuela S O 2018 Nat. Nanotechnol. 13 107
[48] Jansen R and Yuasa S 2024 npj Quantum Inf. 10 21
[49] Jansen R and Yuasa S 2024 Phys. Rev. Appl. 22 054049
[50] Jansen R and Yuasa S 2025 Phys. Rev. B 111 104407
[51] Bloom F L, Wagemans W, Kemerink M and Koopmans B 2007 Phys. Rev. Lett. 99 257201
[52] Alekseev P S 2016 Phys. Rev. Lett. 117 166601
[53] Dai X, Du Z Z and Lu H Z 2017 Phys. Rev. Lett. 119 166601
[54] Blonski P, Tucek J, Sofer Z, Mazanek V, Petr M, Pumera M, Otyepka M and Zboril R 2017 J. Am. Chem. Soc. 139 3171
[55] Tokmachev A M, Averyanov D V, Parfenov O E, Taldenkov A N, Karateev I A, Sokolov I S, Kondratev O A and Storchak V G 2018 Nat. Commun. 9 1672
[56] Gurram M, Omar S and van Wees B J 2017 Nat. Commun. 8 248
[57] Spiesser A, Saito H, Fujita Y, Yamada S, Hamaya K, Yuasa S and Jansen R 2017 Phys. Rev. Appl. 8 064023
[58] Xu Z Y, Wang J L, Pan Y H, Lv B, Zhu Y L, Wu Z H and Dai Y H 2025 Appl. Phys. Lett. 127 093101
[59] Liu Z, Abe S, Shimizu M and Yugami H 2023 Appl. Phys. Lett. 122 093502
[60] Liu P, Niu W, Li Y D, Hou D, Sheng Z G, Zhu H P, Mao W W, Luo H C, Zhou S and Pu Y 2024 Appl. Phys. Lett. 124 091901
[61] Ikeda S, Hayakawa J, Ashizawa Y, Lee Y M, Miura K, Hasegawa H, Tsunoda M, Matsukura F and Ohno H 2008 Appl. Phys. Lett. 93 082508
[62] Liu R R, Zhou J M, Zhang R, Yuan H, Liao X X, Zhou Y B, He J J and Yuan J R 2025 Appl. Phys. Lett. 126 222403
[63] Jeong J W, Filippou C F, Ferrante Y, Garg C, Ikhtiar T T, Yang S H, Parkin S P and Samant M G 2025 Appl. Phys. Lett. 126 252402
[64] Rejec T, Žitko R, Mravlje J and Ramšak A 2012 Phys. Rev. B 85 085117
[65] Mazal Y, Meir Y and Dubi Y 2019 Phys. Rev. B 99 075433
[66] Qi F H, Ying Y B and Jin G J 2011 Phys. Rev. B 83 075310
[67] Souza F M, Egues J C and Jauho A P 2007 Phys. Rev. B 75 165303
[68] van derWielWG, De Franceschi S, Elzerman J M, Fujisawa T, Tarucha S and Kouwenhoven L P 2002 Rev. Mod. Phys. 75 1
[69] Ono K, Austing D G, Tokura Y and Tarucha S 2002 Science 297 1313
[70] Johnson A C, Petta J R, Marcus C M, Hanson M P and Gossard A C 2005 Phys. Rev. B 72 165308
[71] Julliere M 1975 Phys. Lett. A 54 225
[72] Simmons C B, Prance J R, Van Bael B J, Koh T S, Shi Z, Savage D E, Lagally M G, Joynt R, Friesen M, Coppersmith S N and Eriksson M A 2011 Phys. Rev. Lett. 106 156804
[73] Gachter L M, Garreis R, Tong C, Kratochwi B, Gerber J D, Folkert Kornelis de Vries, Ruckriegel M J, Watanabe K, Takashi T, Ihn T, Ensslin K, Kurzmann A and Huang W W 2022 Phys. Rev. X Quantum 3 020343
[74] Jeong H, Chang A M and Melloch M R 2001 Science 293 2221
[75] Gaass M, Hüttel A K, Kang K, Weymann I, von Delft J and Strunk Ch 2011 Phys. Rev. Lett. 107 176808
[76] Cronenwett S M, Oosterkamp T H and Kouwenhoven L P 1998 Science 281 540