Two-dimensional van der Waals multiferroic tunnel junctions for multi-state, low-power spintronics: A review

doi:10.1088/1674-1056/ae3c8b

中国物理B ›› 2026, Vol. 35 ›› Issue (6): 67304-067304.doi: 10.1088/1674-1056/ae3c8b

Two-dimensional van der Waals multiferroic tunnel junctions for multi-state, low-power spintronics: A review

Zhi Yan(严志)^1,2, Jianhua Xiao(肖建华)¹, Ruixia Yang(杨瑞霞)¹, and Xiaohong Xu(许小红)^1,2,†

1 School of Materials Science and Engineering & Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030031, China;
2 Research Institute of Materials Science & Shanxi Key Laboratory of Advanced Magnetic Materials and Devices Shanxi Normal University, Taiyuan 030031, China

收稿日期:2025-11-14 修回日期:2026-01-10 接受日期:2026-01-23 发布日期:2026-06-15
通讯作者: Xiaohong Xu E-mail:xuxh@sxnu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China Regional Innovation and Development Joint Fund Key Program (Grant No. U24A6002), the National Natural Science Foundation of China (Grant No. 12304148), and the Shanxi Natural Science Basic Research Program (Grant No. 202203021222219).

Two-dimensional van der Waals multiferroic tunnel junctions for multi-state, low-power spintronics: A review

Zhi Yan(严志)^1,2, Jianhua Xiao(肖建华)¹, Ruixia Yang(杨瑞霞)¹, and Xiaohong Xu(许小红)^1,2,†

1 School of Materials Science and Engineering & Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Taiyuan 030031, China;
2 Research Institute of Materials Science & Shanxi Key Laboratory of Advanced Magnetic Materials and Devices Shanxi Normal University, Taiyuan 030031, China

Received:2025-11-14 Revised:2026-01-10 Accepted:2026-01-23 Published:2026-06-15
Contact: Xiaohong Xu E-mail:xuxh@sxnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China Regional Innovation and Development Joint Fund Key Program (Grant No. U24A6002), the National Natural Science Foundation of China (Grant No. 12304148), and the Shanxi Natural Science Basic Research Program (Grant No. 202203021222219).

摘要/Abstract

摘要： The convergence of spintronics and multiferroics has enabled unprecedented control of charge and spin degrees of freedom, opening new avenues for multifunctional tunnel junctions. This review provides a systematic overview of multiferroic materials and their integration into tunnel junction devices. First, we categorize multiferroics into type-I, type-II, and heterostructures, discussing synthesis strategies, material design, and approaches for tuning ferroic properties and magnetoelectric coupling. Next, we examine tunnel junctions, including magnetic and ferroelectric types, and focus on multiferroic tunnel junctions (MFTJs), highlighting the mechanisms underlying tunneling magnetoresistance (TMR) and tunneling electroresistance (TER), as well as the roles of interfacial engineering, electrode asymmetry, and multifield control. Special attention is given to emerging two-dimensional van der Waals MFTJs, which offer multi-level data storage, ultralow-power operation, and efficient spin filtering. Finally, we discuss challenges and future directions, emphasizing the importance of room-temperature, strongly coupled 2D multiferroics, scalable fabrication, and interface optimization for next-generation nonvolatile memory and multifunctional spintronic applications.

关键词: multiferroic tunnel junctions, multiferroic materials, tunneling magnetoresistance, tunneling electroresistance

Abstract: The convergence of spintronics and multiferroics has enabled unprecedented control of charge and spin degrees of freedom, opening new avenues for multifunctional tunnel junctions. This review provides a systematic overview of multiferroic materials and their integration into tunnel junction devices. First, we categorize multiferroics into type-I, type-II, and heterostructures, discussing synthesis strategies, material design, and approaches for tuning ferroic properties and magnetoelectric coupling. Next, we examine tunnel junctions, including magnetic and ferroelectric types, and focus on multiferroic tunnel junctions (MFTJs), highlighting the mechanisms underlying tunneling magnetoresistance (TMR) and tunneling electroresistance (TER), as well as the roles of interfacial engineering, electrode asymmetry, and multifield control. Special attention is given to emerging two-dimensional van der Waals MFTJs, which offer multi-level data storage, ultralow-power operation, and efficient spin filtering. Finally, we discuss challenges and future directions, emphasizing the importance of room-temperature, strongly coupled 2D multiferroics, scalable fabrication, and interface optimization for next-generation nonvolatile memory and multifunctional spintronic applications.

Key words: multiferroic tunnel junctions, multiferroic materials, tunneling magnetoresistance, tunneling electroresistance

中图分类号: (Electronic transport in interface structures)

73.40.-c

75.47.-m (Magnetotransport phenomena; materials for magnetotransport) 75.85.+t (Magnetoelectric effects, multiferroics) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

Zhi Yan(严志), Jianhua Xiao(肖建华), Ruixia Yang(杨瑞霞), and Xiaohong Xu(许小红). Two-dimensional van der Waals multiferroic tunnel junctions for multi-state, low-power spintronics: A review[J]. 中国物理B, 2026, 35(6): 67304-067304.

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Two-dimensional van der Waals multiferroic tunnel junctions for multi-state, low-power spintronics: A review

Two-dimensional van der Waals multiferroic tunnel junctions for multi-state, low-power spintronics: A review

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