中国物理B ›› 2026, Vol. 35 ›› Issue (3): 37103-037103.doi: 10.1088/1674-1056/ae27b2

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Topological phases in nitrogen-doped chevron graphene nanoribbons

Yixuan Gao(高艺璇)1,†, Xinxi Zeng(曾新喜)2, and Ruizi Zhang(张瑞梓)3,‡   

  1. 1 State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China;
    2 School of Mechanical Engineering, University of Science and Technology Beijing, Beijing 100083, China;
    3 National Key Laboratory of Materials for Integrated Circuits, 2020-Xlab, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 201800, China
  • 收稿日期:2025-09-22 修回日期:2025-12-02 接受日期:2025-12-04 出版日期:2026-02-11 发布日期:2026-03-19
  • 通讯作者: Yixuan Gao, Ruizi Zhang E-mail:gaoyixuan@ustb.edu.cn;rzzhang@mail.sim.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 52572063 and 52350322), the Fundamental Research Funds for the Central Universities (Grant Nos. FRF-TP-24-055A and FRF-IDRY-24-007), the 9th Research Institute of China Electronics Technology Group Corporation’s open projects (Grant No. 2024SK-003-2), the State Key Lab for Advanced Metals and Materials (Grant Nos. 41601124 and 41601126), and the Beijing Natural Science Foundation (Grant No. L223029).

Topological phases in nitrogen-doped chevron graphene nanoribbons

Yixuan Gao(高艺璇)1,†, Xinxi Zeng(曾新喜)2, and Ruizi Zhang(张瑞梓)3,‡   

  1. 1 State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China;
    2 School of Mechanical Engineering, University of Science and Technology Beijing, Beijing 100083, China;
    3 National Key Laboratory of Materials for Integrated Circuits, 2020-Xlab, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 201800, China
  • Received:2025-09-22 Revised:2025-12-02 Accepted:2025-12-04 Online:2026-02-11 Published:2026-03-19
  • Contact: Yixuan Gao, Ruizi Zhang E-mail:gaoyixuan@ustb.edu.cn;rzzhang@mail.sim.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 52572063 and 52350322), the Fundamental Research Funds for the Central Universities (Grant Nos. FRF-TP-24-055A and FRF-IDRY-24-007), the 9th Research Institute of China Electronics Technology Group Corporation’s open projects (Grant No. 2024SK-003-2), the State Key Lab for Advanced Metals and Materials (Grant Nos. 41601124 and 41601126), and the Beijing Natural Science Foundation (Grant No. L223029).

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摘要： Researches on one-dimensional topological insulators have garnered significant attention following the discovery of symmetry-protected topological phases in graphene nanoribbons (GNRs). The topological properties of GNRs are modulated by shape modulation, such as altering the width, edge structure, and unit cell termination. Compared to shape modulation, the introduction of foreign atoms doping in the unit cell has proven more practical. However, the impact of doping on topological properties and the underlying mechanisms remain incompletely understood. In this study, nitrogen doping in chevron GNR is utilized to investigate the mechanism of the topological properties with different doping concentrations. The nitrogen doping reduces the intracell hopping parameter, and transforms the GNR from trivial to nontrivial when the doping level reaches eight nitrogen atoms per unit cell. Additionally, the GNR junctions comprising the chevron-GNR and pristine armchair GNRs demonstrate antiferromagnetic exchange coupling. These findings may inform future experimental design of GNR-based electronic devices.

关键词: one-dimensional topological insulators, nitrogen-doped chevron graphene nanoribbons, density functional theory, junction states, antiferromagnetic spin centers

Abstract: Researches on one-dimensional topological insulators have garnered significant attention following the discovery of symmetry-protected topological phases in graphene nanoribbons (GNRs). The topological properties of GNRs are modulated by shape modulation, such as altering the width, edge structure, and unit cell termination. Compared to shape modulation, the introduction of foreign atoms doping in the unit cell has proven more practical. However, the impact of doping on topological properties and the underlying mechanisms remain incompletely understood. In this study, nitrogen doping in chevron GNR is utilized to investigate the mechanism of the topological properties with different doping concentrations. The nitrogen doping reduces the intracell hopping parameter, and transforms the GNR from trivial to nontrivial when the doping level reaches eight nitrogen atoms per unit cell. Additionally, the GNR junctions comprising the chevron-GNR and pristine armchair GNRs demonstrate antiferromagnetic exchange coupling. These findings may inform future experimental design of GNR-based electronic devices.

Key words: one-dimensional topological insulators, nitrogen-doped chevron graphene nanoribbons, density functional theory, junction states, antiferromagnetic spin centers

中图分类号:  (Density functional theory, local density approximation, gradient and other corrections)

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73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 61.48.Gh (Structure of graphene) 61.82.Fk (Semiconductors)