中国物理B ›› 2026, Vol. 35 ›› Issue (3): 33402-033402.doi: 10.1088/1674-1056/ae2f54

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Theoretical study of electron-ion resonant recombination of Be-like Si10+ ion

Jing-Lin Rui(芮静琳)1,2, Jian-Ping Pan(潘建平)2,3, Lu-You Xie(颉录有)2,†, Yu-Long Ma(马玉龙)2, and Chen-Zhong Dong(董晨钟)2,‡   

  1. 1 School of Cyber Security, Gansu University of Political Science and Law, Lanzhou 730070, China;
    2 Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China;
    3 Guazhou County No. 1 Middle School, Guazhou 736100, China
  • 收稿日期:2025-09-26 修回日期:2025-12-18 接受日期:2025-12-19 出版日期:2026-02-11 发布日期:2026-03-10
  • 通讯作者: Lu-You Xie, Chen-Zhong Dong E-mail:xiely@nwnu.edu.cn;dongcz@nwnu.edu.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1602500), the National Natural Science Foundation of China (Grant Nos. 12064041, 11874051, 12104373, 12374384, and 12464036), Central Leading Local Science and Technology Development Fund Projects (Grant No. 23ZYQA293), funds for Innovative Fundamental Research Group Project of Gansu Province (Grant No. 20JR5RA541), and Research and Innovation Project of Gansu University of Political Science and Law (Grant No. GZF2025XQN18).

Theoretical study of electron-ion resonant recombination of Be-like Si10+ ion

Jing-Lin Rui(芮静琳)1,2, Jian-Ping Pan(潘建平)2,3, Lu-You Xie(颉录有)2,†, Yu-Long Ma(马玉龙)2, and Chen-Zhong Dong(董晨钟)2,‡   

  1. 1 School of Cyber Security, Gansu University of Political Science and Law, Lanzhou 730070, China;
    2 Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China;
    3 Guazhou County No. 1 Middle School, Guazhou 736100, China
  • Received:2025-09-26 Revised:2025-12-18 Accepted:2025-12-19 Online:2026-02-11 Published:2026-03-10
  • Contact: Lu-You Xie, Chen-Zhong Dong E-mail:xiely@nwnu.edu.cn;dongcz@nwnu.edu.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1602500), the National Natural Science Foundation of China (Grant Nos. 12064041, 11874051, 12104373, 12374384, and 12464036), Central Leading Local Science and Technology Development Fund Projects (Grant No. 23ZYQA293), funds for Innovative Fundamental Research Group Project of Gansu Province (Grant No. 20JR5RA541), and Research and Innovation Project of Gansu University of Political Science and Law (Grant No. GZF2025XQN18).

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摘要： Theoretical investigations of ${L}$-shell $\Delta n = 1$ ($2{\rm s}\rightarrow 3{\rm l}$) and 2 (2${\rm s}\rightarrow 4{\rm l}$) as well as ${K}$-shell $\Delta n = 1$ (1$\rm s\rightarrow 2l$) electron-ion resonant recombination for both the ground state ($2\rm s^2$ $^1$S$_0$) and the long-lived metastable state ($\rm 2s2p$ $^3$P$_0$) of Be-like Si$^{10+}$ are performed. The calculations include not only the dominant dielectronic recombination (DR), but also high-order trielectronic (TR) and quadruelectronic recombination (QR) processes. Level-by-level calculations are performed for resonance energies and resonance strengths using the relativistic configuration interaction method. The theoretical rate coefficients are presented and compared with the experimental results measured at the heavy-ion storage ring TSR. When considering fractional populations of 93$%$ and 7$%$ for the ground state $\rm 2s^2$ $^1$S$_0$ and the metastable state $\rm 2s2p$ $^3$P$_0$, the present rate coefficients agree well with the experimental measurements. The contributions of TR are important, which is about 9.26% to the total rate coefficient of ${L}$-shell recombination. The plasma rate coefficients are also calculated, and an analytical formula is presented for convenient modeling of astrophysical and fusion plasmas.

关键词: dielectronic recombination, rate coefficient, metastable states, silicon

Abstract: Theoretical investigations of ${L}$-shell $\Delta n = 1$ ($2{\rm s}\rightarrow 3{\rm l}$) and 2 (2${\rm s}\rightarrow 4{\rm l}$) as well as ${K}$-shell $\Delta n = 1$ (1$\rm s\rightarrow 2l$) electron-ion resonant recombination for both the ground state ($2\rm s^2$ $^1$S$_0$) and the long-lived metastable state ($\rm 2s2p$ $^3$P$_0$) of Be-like Si$^{10+}$ are performed. The calculations include not only the dominant dielectronic recombination (DR), but also high-order trielectronic (TR) and quadruelectronic recombination (QR) processes. Level-by-level calculations are performed for resonance energies and resonance strengths using the relativistic configuration interaction method. The theoretical rate coefficients are presented and compared with the experimental results measured at the heavy-ion storage ring TSR. When considering fractional populations of 93$%$ and 7$%$ for the ground state $\rm 2s^2$ $^1$S$_0$ and the metastable state $\rm 2s2p$ $^3$P$_0$, the present rate coefficients agree well with the experimental measurements. The contributions of TR are important, which is about 9.26% to the total rate coefficient of ${L}$-shell recombination. The plasma rate coefficients are also calculated, and an analytical formula is presented for convenient modeling of astrophysical and fusion plasmas.

Key words: dielectronic recombination, rate coefficient, metastable states, silicon

中图分类号:  (Recombination, attachment, and positronium formation)

  • 34.80.Lx
36.20.Kd (Electronic structure and spectra) 95.30.Dr (Atomic processes and interactions) 31.15.ve (Electron correlation calculations for atoms and ions: ground state)