中国物理B ›› 2025, Vol. 34 ›› Issue (9): 97305-097305.doi: 10.1088/1674-1056/ade24e

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Enhancing room-temperature thermoelectricity of SrTiO3 based superlattices via epitaxial strain

Yi Zhu(朱怡)2,3, Hao Liu(刘昊)2,3, Huilin Lai(赖辉琳)2,3, Zhenghua An(安正华)2,3, Yinyan Zhu(朱银燕)1,2,4,5,§, Lifeng Yin(殷立峰)1,2,3,4,‡, and Jian Shen(沈健)1,2,3,4,5,6,†   

  1. 1 Shanghai Research Center for Quantum Sciences, Shanghai 201315, China;
    2 State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China;
    3 Department of Physics, Fudan University, Shanghai 200433, China;
    4 Zhangjiang Fudan International Innovation Center, Shanghai 201210, China;
    5 Hefei National Laboratory, Hefei 230088, China;
    6 Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
  • 收稿日期:2025-05-04 修回日期:2025-06-06 接受日期:2025-06-09 出版日期:2025-08-21 发布日期:2025-09-19
  • 通讯作者: Jian Shen, Lifeng Yin, Yinyan Zhu E-mail:shenj5494@fudan.edu.cn;lifengyin@fudan.edu.cn;zhuyinyan@fudan.edu.cn
  • 基金资助:
    We thank beamline BL14B1 (Shanghai Synchrotron Radiation Facility) for providing the beam time and help during experiments. This work is supported by the National Key Research & Development Program of China (Grant No. 2022YFA1403300), the Innovation Program for Quantum Science and Technology (Grant No. 2024ZD0300103), the National Natural Science Foundation of China (Grant Nos. 11991060, 11427902, 12074075, 62171136, and 12474165), the Shanghai Municipal Science and Technology Major Project (Grant No. 2019SHZDZX01), and the Shanghai Municipal Natural Science Foundation (Grant Nos. 22ZR1407400, 22ZR1408100, and 23ZR1407200).

Enhancing room-temperature thermoelectricity of SrTiO3 based superlattices via epitaxial strain

Yi Zhu(朱怡)2,3, Hao Liu(刘昊)2,3, Huilin Lai(赖辉琳)2,3, Zhenghua An(安正华)2,3, Yinyan Zhu(朱银燕)1,2,4,5,§, Lifeng Yin(殷立峰)1,2,3,4,‡, and Jian Shen(沈健)1,2,3,4,5,6,†   

  1. 1 Shanghai Research Center for Quantum Sciences, Shanghai 201315, China;
    2 State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China;
    3 Department of Physics, Fudan University, Shanghai 200433, China;
    4 Zhangjiang Fudan International Innovation Center, Shanghai 201210, China;
    5 Hefei National Laboratory, Hefei 230088, China;
    6 Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
  • Received:2025-05-04 Revised:2025-06-06 Accepted:2025-06-09 Online:2025-08-21 Published:2025-09-19
  • Contact: Jian Shen, Lifeng Yin, Yinyan Zhu E-mail:shenj5494@fudan.edu.cn;lifengyin@fudan.edu.cn;zhuyinyan@fudan.edu.cn
  • Supported by:
    We thank beamline BL14B1 (Shanghai Synchrotron Radiation Facility) for providing the beam time and help during experiments. This work is supported by the National Key Research & Development Program of China (Grant No. 2022YFA1403300), the Innovation Program for Quantum Science and Technology (Grant No. 2024ZD0300103), the National Natural Science Foundation of China (Grant Nos. 11991060, 11427902, 12074075, 62171136, and 12474165), the Shanghai Municipal Science and Technology Major Project (Grant No. 2019SHZDZX01), and the Shanghai Municipal Natural Science Foundation (Grant Nos. 22ZR1407400, 22ZR1408100, and 23ZR1407200).

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摘要： Epitaxial strain is an effective way to control thermoelectricity of a thin film system. In this work, we investigate strain-dependent thermoelectricity of [(SrTiO$_{3}$)$_{3}$/(SrTi$_{0.8}$Nb$_{0.2}$O$_{3}$)$_{3}$]$_{10 }$ superlattices grown on different substrates, including $-0.96$% on (LaAlO$_{3}$)$_{0.3}$(SrAl$_{0.5}$Ta$_{0.5}$O$_{3}$)$_{0.7}$(001) (LSAT), 0% on SrTiO$_{3}$(001) (STO), $+0.99$% on DyScO$_{3}$(110) (DSO) and $+1.64$% on GdScO$_{3}$(110) (GSO), respectively. Our results show that the highest room-temperature thermoelectricity is achieved when the STO-based superlattice is grown on the DSO substrate with $+0.99$% tensile strain. This is attributed to the high permittivity and low dielectric loss arising from the ferroelectric domain and electron-phonon coupling, which boost the power factor (PF) to 10.5 mW$\cdot$m$^{-1}\cdot$K$^{-2}$ at 300 K.

关键词: strain engineering, thermoelectric superlattices, ferroelectricity

Abstract: Epitaxial strain is an effective way to control thermoelectricity of a thin film system. In this work, we investigate strain-dependent thermoelectricity of [(SrTiO$_{3}$)$_{3}$/(SrTi$_{0.8}$Nb$_{0.2}$O$_{3}$)$_{3}$]$_{10 }$ superlattices grown on different substrates, including $-0.96$% on (LaAlO$_{3}$)$_{0.3}$(SrAl$_{0.5}$Ta$_{0.5}$O$_{3}$)$_{0.7}$(001) (LSAT), 0% on SrTiO$_{3}$(001) (STO), $+0.99$% on DyScO$_{3}$(110) (DSO) and $+1.64$% on GdScO$_{3}$(110) (GSO), respectively. Our results show that the highest room-temperature thermoelectricity is achieved when the STO-based superlattice is grown on the DSO substrate with $+0.99$% tensile strain. This is attributed to the high permittivity and low dielectric loss arising from the ferroelectric domain and electron-phonon coupling, which boost the power factor (PF) to 10.5 mW$\cdot$m$^{-1}\cdot$K$^{-2}$ at 300 K.

Key words: strain engineering, thermoelectric superlattices, ferroelectricity

中图分类号:  (Thermoelectric effects)

  • 73.50.Lw
77.80.-e (Ferroelectricity and antiferroelectricity)