中国物理B ›› 2025, Vol. 34 ›› Issue (5): 57801-057801.doi: 10.1088/1674-1056/adbee7

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Effects of helium ion irradiation and thermal annealing on the optical and structural properties of hexagonal boron nitride

Guan-Lin Liu(刘冠麟)1,2, Ji-Lian Xu(徐辑廉)1, Peng-Tao Jing(景鹏涛)1,†, Jing-Jing Shao(邵京京)1,2, Xu Guo(郭旭)1,2, Yun-Tao Wu(吴韵涛)1,2, Feng Qin(覃凤)1,2, Zhen Cheng(程祯)1, Deming Liu(刘德明)1, Yang Bao(鲍洋)1, Hai Xu(徐海)1, Li-Gong Zhang(张立功)1, Da Zhan(詹达)1, Jia-Xu Yan(闫家旭)1, Lei Liu(刘雷)1, and De-Zhen Shen(申德振)1   

  1. 1 State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
    2 University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2025-01-22 修回日期:2025-02-25 接受日期:2025-03-11 出版日期:2025-04-18 发布日期:2025-04-18
  • 通讯作者: Peng-Tao Jing E-mail:jingpt@ciomp.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11727902, 12074372, 12174385, 12334014, and 12304112).

Effects of helium ion irradiation and thermal annealing on the optical and structural properties of hexagonal boron nitride

Guan-Lin Liu(刘冠麟)1,2, Ji-Lian Xu(徐辑廉)1, Peng-Tao Jing(景鹏涛)1,†, Jing-Jing Shao(邵京京)1,2, Xu Guo(郭旭)1,2, Yun-Tao Wu(吴韵涛)1,2, Feng Qin(覃凤)1,2, Zhen Cheng(程祯)1, Deming Liu(刘德明)1, Yang Bao(鲍洋)1, Hai Xu(徐海)1, Li-Gong Zhang(张立功)1, Da Zhan(詹达)1, Jia-Xu Yan(闫家旭)1, Lei Liu(刘雷)1, and De-Zhen Shen(申德振)1   

  1. 1 State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
    2 University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China
  • Received:2025-01-22 Revised:2025-02-25 Accepted:2025-03-11 Online:2025-04-18 Published:2025-04-18
  • Contact: Peng-Tao Jing E-mail:jingpt@ciomp.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11727902, 12074372, 12174385, 12334014, and 12304112).

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摘要： Hexagonal boron nitride (h-BN) has emerged as a promising two-dimensional material for quantum and optoelectronic applications, with its unique ability to host engineered defects enabling single-photon emission and spin manipulation. This study investigates defect formation in h-BN using focused helium ion beam (He$^{+}$ FIB) irradiation and post-annealing treatments. We demonstrate that helium ion irradiation at doses up to $2\times 10^9$ ions/μm$^2$ does not induce phase transitions or amorphization. Spectroscopic analyses, including differential reflectance spectroscopy (DRS), photoluminescence (PL), and Raman spectroscopy, reveal substantial defect formation and structural modifications. Notably, the irradiation induces a softening of in-plane and interlayer phonon modes, characterized by frequency redshifts of 10.5 cm$^{-1}$ and 3.2 cm$^{-1}$, respectively. While high-temperature thermal annealing mitigates lattice defects and facilitates single-photon emission, the E$_{\rm 2g}$ peak width remains 38% broader and the shear mode peak width is 60% broader compared to pre-annealing conditions in the Raman spectra, indicating residual structural degradation. These findings provide insights into defect engineering mechanisms in h-BN, offering guidance for optimizing processing conditions and advancing quantum and optoelectronic device technologies.

关键词: hexagonal boron nitride, focused ion beam, defect engineering, quantum materials, spectroscopy

Abstract: Hexagonal boron nitride (h-BN) has emerged as a promising two-dimensional material for quantum and optoelectronic applications, with its unique ability to host engineered defects enabling single-photon emission and spin manipulation. This study investigates defect formation in h-BN using focused helium ion beam (He$^{+}$ FIB) irradiation and post-annealing treatments. We demonstrate that helium ion irradiation at doses up to $2\times 10^9$ ions/μm$^2$ does not induce phase transitions or amorphization. Spectroscopic analyses, including differential reflectance spectroscopy (DRS), photoluminescence (PL), and Raman spectroscopy, reveal substantial defect formation and structural modifications. Notably, the irradiation induces a softening of in-plane and interlayer phonon modes, characterized by frequency redshifts of 10.5 cm$^{-1}$ and 3.2 cm$^{-1}$, respectively. While high-temperature thermal annealing mitigates lattice defects and facilitates single-photon emission, the E$_{\rm 2g}$ peak width remains 38% broader and the shear mode peak width is 60% broader compared to pre-annealing conditions in the Raman spectra, indicating residual structural degradation. These findings provide insights into defect engineering mechanisms in h-BN, offering guidance for optimizing processing conditions and advancing quantum and optoelectronic device technologies.

Key words: hexagonal boron nitride, focused ion beam, defect engineering, quantum materials, spectroscopy

中图分类号:  (Infrared and Raman spectra)

  • 78.30.-j
78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures) 61.72.J- (Point defects and defect clusters) 81.05.-t (Specific materials: fabrication, treatment, testing, and analysis)