中国物理B ›› 2025, Vol. 34 ›› Issue (6): 66205-066205.doi: 10.1088/1674-1056/adcaa2
所属专题： SPECIAL TOPIC — Structures and properties of materials under high pressure
Band gap engineering and vibrational properties of van der Waals semiconductor ZnPSe3 under compression
Rouqiong Su(苏柔琼)1,†, Yuying Li(李玉莹)1,†, Chunhua Chen(陈春华)2, Yifang Yuan(袁亦方)1,‡, and Haizhong Guo(郭海中)1,3,§
- 1 Key Laboratory of Material Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China;
2 Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China;
3 Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, China
Band gap engineering and vibrational properties of van der Waals semiconductor ZnPSe3 under compression
Rouqiong Su(苏柔琼)1,†, Yuying Li(李玉莹)1,†, Chunhua Chen(陈春华)2, Yifang Yuan(袁亦方)1,‡, and Haizhong Guo(郭海中)1,3,§
- 1 Key Laboratory of Material Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China;
2 Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China;
3 Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, China
摘要： In recent years, transition metal phosphorus trichalcogenides $M$P$X_{3}$ ($M =$ transition metal, $X =$ S, Se) have garnered significant attention in the field of two-dimensional van der Waals materials on account of their unique layered structures and diverse physical properties. In this work, we systematically investigated the vibrational modes and band gap evolution of ZnPSe$_{3}$ under extreme conditions using Raman spectroscopy and high-pressure ultraviolet-visible (UV-vis) absorption spectroscopy. The experimental results demonstrate that the vibrational modes of ZnPSe$_{3}$ remain stable at low temperatures (5-300 K) and high pressures (0-22.1 GPa). Notably, the band gap of ZnPSe$_{3}$ exhibits an initial increase followed by a decrease under pressures ranging from 0 to 20.6 GPa, which is likely associated with a pressure-induced transition from an indirect to a direct band gap. This work not only enriches the understanding of van der Waals materials but also provides crucial experimental insights for their application in band gap engineering.
中图分类号: (High-pressure effects in solids and liquids)
- 62.50.-p