High on-state current p-type tunnel effect transistor based on doping modulation

doi:10.1088/1674-1056/ac9cbb

中国物理B ›› 2023, Vol. 32 ›› Issue (7): 78504-078504.doi: 10.1088/1674-1056/ac9cbb

High on-state current p-type tunnel effect transistor based on doping modulation

Jiale Sun(孙佳乐)¹, Yuming Zhang(张玉明)¹, Hongliang Lu(吕红亮)^1,†, Zhijun Lyu(吕智军)², Yi Zhu(朱翊)¹, Yuche Pan(潘禹澈)¹, and Bin Lu(芦宾)³

1 School of Microelectronics, Xidian University, The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071, China;
2 Department of Integrated Circuit Design, Institute of Microelectronics Technology, Xi'an 710071, China;
3 School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China

收稿日期:2022-07-08 修回日期:2022-09-22 接受日期:2022-10-21 出版日期:2023-06-15 发布日期:2023-07-05
通讯作者: Hongliang Lu E-mail:hllv@mail.xidian.edu.cn
基金资助:
Project supported by the Key Research and Development Program of Shaanxi (Grant No. 2021GY-010) and the National Defense Science and Technology Foundation Strengthening Program of China (Grant No. 2019-XXXX-XX-236-00).

High on-state current p-type tunnel effect transistor based on doping modulation

Jiale Sun(孙佳乐)¹, Yuming Zhang(张玉明)¹, Hongliang Lu(吕红亮)^1,†, Zhijun Lyu(吕智军)², Yi Zhu(朱翊)¹, Yuche Pan(潘禹澈)¹, and Bin Lu(芦宾)³

1 School of Microelectronics, Xidian University, The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071, China;
2 Department of Integrated Circuit Design, Institute of Microelectronics Technology, Xi'an 710071, China;
3 School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China

Received:2022-07-08 Revised:2022-09-22 Accepted:2022-10-21 Online:2023-06-15 Published:2023-07-05
Contact: Hongliang Lu E-mail:hllv@mail.xidian.edu.cn
Supported by:
Project supported by the Key Research and Development Program of Shaanxi (Grant No. 2021GY-010) and the National Defense Science and Technology Foundation Strengthening Program of China (Grant No. 2019-XXXX-XX-236-00).

摘要/Abstract

摘要： To solve the problem of the low on-state current in p-type tunnel field-effect transistors (p-TFETs), this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling barrier. Doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated, and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of other devices with the same structure. This method provides a new idea for the realization of high on-state current TFET devices.

关键词: tunnel field-effect transistors (TFET), band-to-band tunneling (BTBT), on-state current, doping modulation

Abstract: To solve the problem of the low on-state current in p-type tunnel field-effect transistors (p-TFETs), this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling barrier. Doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated, and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of other devices with the same structure. This method provides a new idea for the realization of high on-state current TFET devices.

Key words: tunnel field-effect transistors (TFET), band-to-band tunneling (BTBT), on-state current, doping modulation

中图分类号: (Junction breakdown and tunneling devices (including resonance tunneling devices))

85.30.Mn

85.40.Ry (Impurity doping, diffusion and ion implantation technology) 73.40.Gk (Tunneling)

Jiale Sun(孙佳乐), Yuming Zhang(张玉明), Hongliang Lu(吕红亮), Zhijun Lyu(吕智军),Yi Zhu(朱翊), Yuche Pan(潘禹澈), and Bin Lu(芦宾). High on-state current p-type tunnel effect transistor based on doping modulation[J]. 中国物理B, 2023, 32(7): 78504-078504.

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High on-state current p-type tunnel effect transistor based on doping modulation

High on-state current p-type tunnel effect transistor based on doping modulation

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