中国物理B ›› 2023, Vol. 32 ›› Issue (5): 54210-054210.doi: 10.1088/1674-1056/acc05e
Optically pumped wavelength-tunable lasing from a GaN beam cavity with an integrated Joule heater pivoted on Si
Feifei Qin(秦飞飞)1, Yang Sun(孙阳)1, Ying Yang(杨颖)1, Xin Li(李欣)1,2, Xu Wang(王旭)3, Junfeng Lu(卢俊峰)4, Yongjin Wang(王永进)1, and Gangyi Zhu(朱刚毅)1,†
- 1 GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;
2 Key Laboratory of Broadband Wireless Communication and Sensor Network Technology(Nanjing University of Posts and Telecommunications, Ministry of Education), Nanjing 210003, China;
3 Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China;
4 College of Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
Optically pumped wavelength-tunable lasing from a GaN beam cavity with an integrated Joule heater pivoted on Si
Feifei Qin(秦飞飞)1, Yang Sun(孙阳)1, Ying Yang(杨颖)1, Xin Li(李欣)1,2, Xu Wang(王旭)3, Junfeng Lu(卢俊峰)4, Yongjin Wang(王永进)1, and Gangyi Zhu(朱刚毅)1,†
- 1 GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;
2 Key Laboratory of Broadband Wireless Communication and Sensor Network Technology(Nanjing University of Posts and Telecommunications, Ministry of Education), Nanjing 210003, China;
3 Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China;
4 College of Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
摘要： Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a GaN-based laser with an integrated PN junction heater on Si is fabricated. The photoluminescence properties of the GaN beam cavity are controlled by temperature, and the Joule heater provides electrically driven regulation of temperature. These two features of the cavity make it possible to realize convenient tuning of the lasing properties. The multi-functional GaN beam cavity achieves optically pumped lasing with a single mode near 362.4 nm with a high Q-factor of 1394. The temperature of this device increases by 0-5 ℃ under the Joule heating effect. Then, electrical control of the lasing mode is demonstrated. The lasing resonant peak shows a continuous redshift of about 0.5 nm and the device also exhibits dynamic switching of its lasing mode. The lasing modulation can be ascribed to temperature-induced reduction of the bandgap. Our work may be of benefit for external optical modulation in future chip-based optoelectronic devices.
中图分类号: (Wave propagation, transmission and absorption)
- 42.25.Bs