Local density of optical states calculated by the mode spectrum in stratified media

doi:10.1088/1674-1056/acaf2c

中国物理B ›› 2023, Vol. 32 ›› Issue (4): 40204-040204.doi: 10.1088/1674-1056/acaf2c

Local density of optical states calculated by the mode spectrum in stratified media

Ting Fu(傅廷)^1,3, Jingxuan Chen(陈静瑄)^1,3, Xueyou Wang(王学友)¹, Yingqiu Dai(戴迎秋)^1,2, Xuyan Zhou(周旭彦)^1,5,†, Yufei Wang(王宇飞)^1,2,‡, Mingjin Wang(王明金)¹, and Wanhua Zheng(郑婉华)^1,2,3,4,§

1 Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Future Technology, University of Chinese Academy of Sciences, Beijing 101408, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
4 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
5 Weifang Academy of Advanced Opto-electronic Circuits, Weifang 261021, China

收稿日期:2022-09-22 修回日期:2022-12-16 接受日期:2022-12-30 出版日期:2023-03-10 发布日期:2023-03-30
通讯作者: Xuyan Zhou, Yufei Wang, Wanhua Zheng E-mail:zhouxuyan@semi.ac.cn;yufeiwang@semi.ac.cn;whzheng@semi.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFA1400604 and 2021YFB2801400) and the National Natural Science Foundation of China (Grant Nos. 91850206, 62075213, 62135001, and 62205328).

Local density of optical states calculated by the mode spectrum in stratified media

1 Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Future Technology, University of Chinese Academy of Sciences, Beijing 101408, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
4 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
5 Weifang Academy of Advanced Opto-electronic Circuits, Weifang 261021, China

Received:2022-09-22 Revised:2022-12-16 Accepted:2022-12-30 Online:2023-03-10 Published:2023-03-30
Contact: Xuyan Zhou, Yufei Wang, Wanhua Zheng E-mail:zhouxuyan@semi.ac.cn;yufeiwang@semi.ac.cn;whzheng@semi.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFA1400604 and 2021YFB2801400) and the National Natural Science Foundation of China (Grant Nos. 91850206, 62075213, 62135001, and 62205328).

摘要/Abstract

摘要： The local density of optical states (LDOS) is an important physical concept, which can characterize the spontaneous emission of microcavities. In order to calculate the LDOS, the relationship between the mode spectrum and the LDOS is established. Then, based on the transfer matrix method and the effective resonator model, the leaky loss of the leaky mode and the mode spectrum in the one-dimensional photonic bandgap crystal waveguide are calculated, results of which indicate that the mode spectrum can characterize the leaky loss of the leaky mode. At last, the density of optical states (DOS), and the LDOS in each layer are calculated. The partial DOS and the partial LDOS in the quantum well, related to the fundamental leaky mode, can be used to find out the optimal location of the quantum well in the defect layer to couple more useful photons into the lasing mode for lasers.

关键词: local density of optical states, mode spectrum, transfer matrix method

Abstract: The local density of optical states (LDOS) is an important physical concept, which can characterize the spontaneous emission of microcavities. In order to calculate the LDOS, the relationship between the mode spectrum and the LDOS is established. Then, based on the transfer matrix method and the effective resonator model, the leaky loss of the leaky mode and the mode spectrum in the one-dimensional photonic bandgap crystal waveguide are calculated, results of which indicate that the mode spectrum can characterize the leaky loss of the leaky mode. At last, the density of optical states (DOS), and the LDOS in each layer are calculated. The partial DOS and the partial LDOS in the quantum well, related to the fundamental leaky mode, can be used to find out the optimal location of the quantum well in the defect layer to couple more useful photons into the lasing mode for lasers.

Key words: local density of optical states, mode spectrum, transfer matrix method

中图分类号: (Numerical simulation; solution of equations)

02.60.Cb

42.25.Bs (Wave propagation, transmission and absorption) 42.60.Da (Resonators, cavities, amplifiers, arrays, and rings)

Ting Fu(傅廷), Jingxuan Chen(陈静瑄), Xueyou Wang(王学友), Yingqiu Dai(戴迎秋), Xuyan Zhou(周旭彦), Yufei Wang(王宇飞), Mingjin Wang(王明金), and Wanhua Zheng(郑婉华). Local density of optical states calculated by the mode spectrum in stratified media[J]. 中国物理B, 2023, 32(4): 40204-040204.

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Local density of optical states calculated by the mode spectrum in stratified media

Local density of optical states calculated by the mode spectrum in stratified media

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