Temperature dependence of spin pumping in YIG/NiOx/W multilayer

doi:10.1088/1674-1056/ac6333

中国物理B ›› 2022, Vol. 31 ›› Issue (12): 128504-128504.doi: 10.1088/1674-1056/ac6333

Temperature dependence of spin pumping in YIG/NiO_x/W multilayer

Lijun Ni(倪丽君)¹, Wenqiang Wang(王文强)¹, Lichuan Jin(金立川)², Jiandong Ye(叶建东)¹, Hehe Gong(巩贺贺)¹, Xiang Zhan(战翔)³, Zhendong Chen(陈振东)⁴, Longlong Zhang(张龙龙)¹, Xingze Dai(代兴泽)¹, Yao Li(黎遥)¹, Rong Zhang(张荣)¹, Yi Yang(杨燚)¹, Huaiwu Zhang(张怀武)², Ronghua Liu(刘荣华)³, Lina Chen(陈丽娜)^5,†, and Yongbing Xu(徐永兵)^1,6,‡

1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
3 Jiangsu Provincial Key Laboratory for Nanotechnology, School of Physics, Nanjing University, Nanjing 210093, China;
4 Jiangsu Key Laboratory of Opto-Electronic Technology, Center for Quantum Transport and Thermal Energy Science, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China;
5 School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
6 York-Nanjing Joint Centre for Spintronics and NanoEngineering, Department of Electronic Engineering, University of York, York YO10 5DD, United Kingdom

收稿日期:2022-01-05 修回日期:2022-03-15 接受日期:2022-04-01 出版日期:2022-11-11 发布日期:2022-11-11
通讯作者: Lina Chen, Yongbing Xu E-mail:chenlina@njupt.edu.cn;ybxu@nju.edu.cn
基金资助:
We acknowledge support from the National Natural Science Foundation of China (Grant Nos. 11774160, 61427812, 61805116, 12004171, 61774081, and 62171096), the Natural Science Foundation of Jiangsu Province of China (Grant No. BK20192006), the National Key Scientific Instrument and Equipment Development Project of China (Grant No. 51827802), the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK20180056 and BK20200307), the Applied Basic Research Programs of the Science and Technology Commission Foundation of Jiangsu Province, China (Grant No. BK20200309), the Open Research Fund of Jiangsu Provincial Key Laboratory for Nanotechnology, the Scientific Foundation of Nanjing University of Posts and Telecommunications (NUPTSF) (Grant No. NY220164), and the State Key R&D Project of Guangdong, China (Grant No. 2020B010174002).

Temperature dependence of spin pumping in YIG/NiO_x/W multilayer

1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
3 Jiangsu Provincial Key Laboratory for Nanotechnology, School of Physics, Nanjing University, Nanjing 210093, China;
4 Jiangsu Key Laboratory of Opto-Electronic Technology, Center for Quantum Transport and Thermal Energy Science, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China;
5 School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
6 York-Nanjing Joint Centre for Spintronics and NanoEngineering, Department of Electronic Engineering, University of York, York YO10 5DD, United Kingdom

Received:2022-01-05 Revised:2022-03-15 Accepted:2022-04-01 Online:2022-11-11 Published:2022-11-11
Contact: Lina Chen, Yongbing Xu E-mail:chenlina@njupt.edu.cn;ybxu@nju.edu.cn
Supported by:
We acknowledge support from the National Natural Science Foundation of China (Grant Nos. 11774160, 61427812, 61805116, 12004171, 61774081, and 62171096), the Natural Science Foundation of Jiangsu Province of China (Grant No. BK20192006), the National Key Scientific Instrument and Equipment Development Project of China (Grant No. 51827802), the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK20180056 and BK20200307), the Applied Basic Research Programs of the Science and Technology Commission Foundation of Jiangsu Province, China (Grant No. BK20200309), the Open Research Fund of Jiangsu Provincial Key Laboratory for Nanotechnology, the Scientific Foundation of Nanjing University of Posts and Telecommunications (NUPTSF) (Grant No. NY220164), and the State Key R&D Project of Guangdong, China (Grant No. 2020B010174002).

摘要/Abstract

摘要： We report the temperature dependence of the spin pumping effect for Y₃Fe₅O₁₂ (YIG, 0.9 μm)/NiO (t_NiO)/W (6 nm) (t_NiO = 0 nm, 1 nm, 2 nm, and 10 nm) heterostructures. All samples exhibit a strong temperature-dependent inverse spin Hall effect (ISHE) signal I_c and sensitivity to the NiO layer thickness. We observe a dramatic decrease of I_c with inserting thin NiO layer between YIG and W layers indicating that the inserting of NiO layer significantly suppresses the spin transport from YIG to W. In contrast to the noticeable enhancement in YIG/NiO (t_NiO ≈ 1-2 nm)/Pt, the suppression of spin transport may be closely related to the specific interface-dependent spin scattering, spin memory loss, and spin conductance at the NiO/W interface. Besides, the I_c of YIG/NiO/W exhibits a maximum near the T_N of the AF NiO layer because the spins are transported dominantly by incoherent thermal magnons.

关键词: spin pumping effect, spin transport, charge current I_c, linewidth Δ H, temperature dependence

Abstract: We report the temperature dependence of the spin pumping effect for Y₃Fe₅O₁₂ (YIG, 0.9 μm)/NiO (t_NiO)/W (6 nm) (t_NiO = 0 nm, 1 nm, 2 nm, and 10 nm) heterostructures. All samples exhibit a strong temperature-dependent inverse spin Hall effect (ISHE) signal I_c and sensitivity to the NiO layer thickness. We observe a dramatic decrease of I_c with inserting thin NiO layer between YIG and W layers indicating that the inserting of NiO layer significantly suppresses the spin transport from YIG to W. In contrast to the noticeable enhancement in YIG/NiO (t_NiO ≈ 1-2 nm)/Pt, the suppression of spin transport may be closely related to the specific interface-dependent spin scattering, spin memory loss, and spin conductance at the NiO/W interface. Besides, the I_c of YIG/NiO/W exhibits a maximum near the T_N of the AF NiO layer because the spins are transported dominantly by incoherent thermal magnons.

Key words: spin pumping effect, spin transport, charge current I_c, linewidth Δ H, temperature dependence

中图分类号: (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

85.75.-d

75.75.Cd (Fabrication of magnetic nanostructures) 72.25.Mk (Spin transport through interfaces) 32.30.Dx (Magnetic resonance spectra)

Lijun Ni(倪丽君), Wenqiang Wang(王文强), Lichuan Jin(金立川), Jiandong Ye(叶建东), Hehe Gong(巩贺贺), Xiang Zhan(战翔), Zhendong Chen(陈振东), Longlong Zhang(张龙龙), Xingze Dai(代兴泽), Yao Li(黎遥), Rong Zhang(张荣), Yi Yang(杨燚), Huaiwu Zhang(张怀武), Ronghua Liu(刘荣华), Lina Chen(陈丽娜), and Yongbing Xu(徐永兵). Temperature dependence of spin pumping in YIG/NiO_x/W multilayer[J]. 中国物理B, 2022, 31(12): 128504-128504.

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Temperature dependence of spin pumping in YIG/NiO_x/W multilayer

Temperature dependence of spin pumping in YIG/NiO_x/W multilayer

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