中国物理B ›› 2022, Vol. 31 ›› Issue (10): 107501-107501.doi: 10.1088/1674-1056/ac6ed9
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Tong-Xi Liu(刘桐汐)1, Zhao-Hao Wang(王昭昊)1,†, Min Wang(王旻)1, Chao Wang(王朝)1, Bi Wu(吴比)2, Wei-Qiang Liu(刘伟强)2, and Wei-Sheng Zhao(赵巍胜)1,‡
Tong-Xi Liu(刘桐汐)1, Zhao-Hao Wang(王昭昊)1,†, Min Wang(王旻)1, Chao Wang(王朝)1, Bi Wu(吴比)2, Wei-Qiang Liu(刘伟强)2, and Wei-Sheng Zhao(赵巍胜)1,‡
摘要: Spin—orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized for inducing various modes of magnetization switching. However, it is a challenge that so many multiple modes of magnetization switching are integrated together. Here we propose a method of implementing both unipolar switching and bipolar switching of the perpendicular magnetization within a single SOT device. The mode of switching can be easily changed by tuning the amplitude of the applied current. We show that the field-like torque plays an important role in switching process. The field-like torque induces the precession of the magnetization in the case of unipolar switching, however, the field-like torque helps to generate an effective z-component torque in the case of bipolar switching. In addition, the influence of key parameters on the mode of switching is discussed, including the field-like torque strength, the bias field, and the current density. Our proposal can be used to design novel reconfigurable logic circuits in the near future.
中图分类号: (Magnetization reversal mechanisms)