中国物理B ›› 2022, Vol. 31 ›› Issue (8): 88104-088104.doi: 10.1088/1674-1056/ac464e

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Determination of band alignment between GaOx and boron doped diamond for a selective-area-doped termination structure

Qi-Liang Wang(王启亮)1,2, Shi-Yang Fu(付诗洋)1, Si-Han He(何思翰)1, Hai-Bo Zhang(张海波)3, Shao-Heng Cheng(成绍恒)1,2,†, Liu-An Li(李柳暗)1,2,‡, and Hong-Dong Li(李红东)1,2   

  1. 1 State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;
    2 Shenzhen Research Institute, Jilin University, Shenzhen 518057, China;
    3 Guangdong Juxin New Material Technology Co., Ltd, Zhuhai 519000, China
  • 收稿日期:2021-09-14 修回日期:2021-12-13 接受日期:2021-12-24 出版日期:2022-07-18 发布日期:2022-07-18
  • 通讯作者: Shao-Heng Cheng, Liu-An Li E-mail:chengshaoheng@jlu.edu.cn;liliuan@jlu.edu.cn
  • 基金资助:
    Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B0101690001).

Determination of band alignment between GaOx and boron doped diamond for a selective-area-doped termination structure

Qi-Liang Wang(王启亮)1,2, Shi-Yang Fu(付诗洋)1, Si-Han He(何思翰)1, Hai-Bo Zhang(张海波)3, Shao-Heng Cheng(成绍恒)1,2,†, Liu-An Li(李柳暗)1,2,‡, and Hong-Dong Li(李红东)1,2   

  1. 1 State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;
    2 Shenzhen Research Institute, Jilin University, Shenzhen 518057, China;
    3 Guangdong Juxin New Material Technology Co., Ltd, Zhuhai 519000, China
  • Received:2021-09-14 Revised:2021-12-13 Accepted:2021-12-24 Online:2022-07-18 Published:2022-07-18
  • Contact: Shao-Heng Cheng, Liu-An Li E-mail:chengshaoheng@jlu.edu.cn;liliuan@jlu.edu.cn
  • Supported by:
    Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B0101690001).

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摘要： An n-GaOx thin film is deposited on a single-crystal boron-doped diamond by RF magnetron sputtering to form the pn heterojunction. The n-GaOx thin film presents a small surface roughness and a large optical band gap of 4.85 eV. In addition, the band alignment is measured using x-ray photoelectron spectroscopy to evaluate the heterojunction properties. The GaOx/diamond heterojunction shows a type-II staggered band configuration, where the valence and conduction band offsets are 1.28 eV and 1.93 eV, respectively. These results confirm the feasibility of the use of n-GaOx as a termination structure for diamond power devices.

关键词: GaOx, boron-doped diamond, edge termination, band alignment

Abstract: An n-GaOx thin film is deposited on a single-crystal boron-doped diamond by RF magnetron sputtering to form the pn heterojunction. The n-GaOx thin film presents a small surface roughness and a large optical band gap of 4.85 eV. In addition, the band alignment is measured using x-ray photoelectron spectroscopy to evaluate the heterojunction properties. The GaOx/diamond heterojunction shows a type-II staggered band configuration, where the valence and conduction band offsets are 1.28 eV and 1.93 eV, respectively. These results confirm the feasibility of the use of n-GaOx as a termination structure for diamond power devices.

Key words: GaOx, boron-doped diamond, edge termination, band alignment

中图分类号:  (Diamond)

  • 81.05.ug
85.30.Kk (Junction diodes) 84.30.Jc (Power electronics; power supply circuits) 71.20.-b (Electron density of states and band structure of crystalline solids)