First-principles calculations of the hole-induced depassivation of SiO2/Si interface defects

doi:10.1088/1674-1056/ac3506

中国物理B ›› 2022, Vol. 31 ›› Issue (5): 57101-057101.doi: 10.1088/1674-1056/ac3506

First-principles calculations of the hole-induced depassivation of SiO₂/Si interface defects

Zhuo-Cheng Hong(洪卓呈)¹, Pei Yao(姚佩)¹, Yang Liu(刘杨)^2,3, and Xu Zuo(左旭)^1,4,5,†

1 College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China;
2 Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China;
3 Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China;
4 Municipal Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, China;
5 Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin 300350, China

收稿日期:2021-05-06 修回日期:2021-10-21 发布日期:2022-04-21
通讯作者: Xu Zuo,E-mail:xzuo@nankai.edu.cn E-mail:xzuo@nankai.edu.cn
基金资助:
Project supported by the Science Challenge Project (Grant No.TZ2016003-1-105),Tianjin Natural Science Foundation,China (Grant No.20JCZDJC00750),and the Fundamental Research Funds for the Central Universities-Nankai University (Grant Nos.63211107 and 63201182).

First-principles calculations of the hole-induced depassivation of SiO₂/Si interface defects

Zhuo-Cheng Hong(洪卓呈)¹, Pei Yao(姚佩)¹, Yang Liu(刘杨)^2,3, and Xu Zuo(左旭)^1,4,5,†

1 College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China;
2 Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China;
3 Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China;
4 Municipal Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, China;
5 Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin 300350, China

Received:2021-05-06 Revised:2021-10-21 Published:2022-04-21
Contact: Xu Zuo,E-mail:xzuo@nankai.edu.cn E-mail:xzuo@nankai.edu.cn
About author:2021-11-1
Supported by:
Project supported by the Science Challenge Project (Grant No.TZ2016003-1-105),Tianjin Natural Science Foundation,China (Grant No.20JCZDJC00750),and the Fundamental Research Funds for the Central Universities-Nankai University (Grant Nos.63211107 and 63201182).

摘要/Abstract

摘要： The holes induced by ionizing radiation or carrier injection can depassivate saturated interface defects. The depassivation of these defects suggests that the deep levels associated with the defects are reactivated, affecting the performance of devices. This work simulates the depassivation reactions between holes and passivated amorphous-SiO₂/Si interface defects (HP_b+h→ P_b+H⁺). The climbing image nudged elastic band method is used to calculate the reaction curves and the barriers. In addition, the atomic charges of the initial and final structures are analyzed by the Bader charge method. It is shown that more than one hole is trapped by the defects, which is implied by the reduction in the total number of valence electrons on the active atoms. The results indicate that the depassivation of the defects by the holes actually occurs in three steps. In the first step, a hole is captured by the passivated defect, resulting in the stretching of the Si-H bond. In the second step, the defect captures one more hole, which may contribute to the breaking of the Si-H bond. The H atom is released as a proton and the Si atom is three-coordinated and positively charged. In the third step, an electron is captured by the Si atom, and the Si atom becomes neutral. In this step, a P_b-type defect is reactivated.

关键词: a-SiO₂/Si interface, hole, depassivation, first-principles calculation

Abstract: The holes induced by ionizing radiation or carrier injection can depassivate saturated interface defects. The depassivation of these defects suggests that the deep levels associated with the defects are reactivated, affecting the performance of devices. This work simulates the depassivation reactions between holes and passivated amorphous-SiO₂/Si interface defects (HP_b+h→ P_b+H⁺). The climbing image nudged elastic band method is used to calculate the reaction curves and the barriers. In addition, the atomic charges of the initial and final structures are analyzed by the Bader charge method. It is shown that more than one hole is trapped by the defects, which is implied by the reduction in the total number of valence electrons on the active atoms. The results indicate that the depassivation of the defects by the holes actually occurs in three steps. In the first step, a hole is captured by the passivated defect, resulting in the stretching of the Si-H bond. In the second step, the defect captures one more hole, which may contribute to the breaking of the Si-H bond. The H atom is released as a proton and the Si atom is three-coordinated and positively charged. In the third step, an electron is captured by the Si atom, and the Si atom becomes neutral. In this step, a P_b-type defect is reactivated.

Key words: a-SiO₂/Si interface, hole, depassivation, first-principles calculation

中图分类号: (Density functional theory, local density approximation, gradient and other corrections)

71.15.Mb

71.20.-b (Electron density of states and band structure of crystalline solids) 61.72.Bb (Theories and models of crystal defects) 61.80.Az (Theory and models of radiation effects)

Zhuo-Cheng Hong(洪卓呈), Pei Yao(姚佩), Yang Liu(刘杨), and Xu Zuo(左旭). First-principles calculations of the hole-induced depassivation of SiO₂/Si interface defects[J]. 中国物理B, 2022, 31(5): 57101-057101.

Zhuo-Cheng Hong(洪卓呈), Pei Yao(姚佩), Yang Liu(刘杨), and Xu Zuo(左旭). First-principles calculations of the hole-induced depassivation of SiO₂/Si interface defects[J]. Chin. Phys. B, 2022, 31(5): 57101-057101.

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First-principles calculations of the hole-induced depassivation of SiO₂/Si interface defects

First-principles calculations of the hole-induced depassivation of SiO₂/Si interface defects

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