中国物理B ›› 2021, Vol. 30 ›› Issue (12): 126804-126804.doi: 10.1088/1674-1056/ac2e63

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Molecular beam epitaxy growth of monolayer hexagonal MnTe2 on Si(111) substrate

S Lu(卢帅)1,2,†, K Peng(彭坤)1,2,†, P D Wang(王鹏栋)2,†, A X Chen(陈爱喜)2, W Ren(任伟)2,5, X W Fang(方鑫伟)2,5, Y Wu(伍莹)2, Z Y Li(李治云)2, H F Li(李慧芳)2,3, F Y Cheng(程飞宇)2, K L Xiong(熊康林)2, J Y Yang(杨继勇)4, J Z Wang(王俊忠)4, S A Ding(丁孙安)2,5, Y P Jiang(蒋烨平)3, L Wang(王利)2,‡, Q Li(李青)1,§, F S Li(李坊森)2,5,¶, and L F Chi(迟力峰)1   

  1. 1 Institute of Functional Nano & Soft Materials(FUNSOM), Soochow University, Suzhou 215123, China;
    2 Vacuum Interconnected Nanotech Workstation(Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO), Chinese Academy of Sciences(CAS), Suzhou 215123, China;
    3 Key Laboratory of Polar Materials and Devices(MOE), Department of Electronic, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China;
    4 School of Physical Science and Technology, Southwest University, Chongqing 400715, China;
    5 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:2021-08-23 修回日期:2021-10-04 接受日期:2021-10-11 出版日期:2021-11-15 发布日期:2021-11-25
  • 通讯作者: L Wang, Q Li, F S Li E-mail:lwang2017@sinano.ac.cn;liqing@suda.edu.cn;liqing@suda.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11604366, 11634007, 21872099, and 22072102) and the National Natural Science Foundation of Jiangsu Province, China (Grant No. BK 20160397). F. S. L. acknowledges support from the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2017370).

Molecular beam epitaxy growth of monolayer hexagonal MnTe2 on Si(111) substrate

S Lu(卢帅)1,2,†, K Peng(彭坤)1,2,†, P D Wang(王鹏栋)2,†, A X Chen(陈爱喜)2, W Ren(任伟)2,5, X W Fang(方鑫伟)2,5, Y Wu(伍莹)2, Z Y Li(李治云)2, H F Li(李慧芳)2,3, F Y Cheng(程飞宇)2, K L Xiong(熊康林)2, J Y Yang(杨继勇)4, J Z Wang(王俊忠)4, S A Ding(丁孙安)2,5, Y P Jiang(蒋烨平)3, L Wang(王利)2,‡, Q Li(李青)1,§, F S Li(李坊森)2,5,¶, and L F Chi(迟力峰)1   

  1. 1 Institute of Functional Nano & Soft Materials(FUNSOM), Soochow University, Suzhou 215123, China;
    2 Vacuum Interconnected Nanotech Workstation(Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO), Chinese Academy of Sciences(CAS), Suzhou 215123, China;
    3 Key Laboratory of Polar Materials and Devices(MOE), Department of Electronic, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China;
    4 School of Physical Science and Technology, Southwest University, Chongqing 400715, China;
    5 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
  • Received:2021-08-23 Revised:2021-10-04 Accepted:2021-10-11 Online:2021-11-15 Published:2021-11-25
  • Contact: L Wang, Q Li, F S Li E-mail:lwang2017@sinano.ac.cn;liqing@suda.edu.cn;liqing@suda.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11604366, 11634007, 21872099, and 22072102) and the National Natural Science Foundation of Jiangsu Province, China (Grant No. BK 20160397). F. S. L. acknowledges support from the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2017370).

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摘要： Monolayer MnTe2 stabilized as 1T structure has been theoretically predicted to be a two-dimensional (2D) ferromagnetic metal and can be tuned via strain engineering. There is no naturally van der Waals (vdW) layered MnTe2 bulk, leaving mechanical exfoliation impossible to prepare monolayer MnTe2. Herein, by means of molecular beam epitaxy (MBE), we successfully prepared monolayer hexagonal MnTe2 on Si(111) under Te rich condition. Sharp reflection high-energy electron diffraction (RHEED) and low-energy electron diffraction (LEED) patterns suggest the monolayer is atomically flat without surface reconstruction. The valence state of Mn4+ and the atom ratio of ([Te]:[Mn]) further confirm the MnTe2 compound. Scanning tunneling spectroscopy (STS) shows the hexagonal MnTe2 monolayer is a semiconductor with a large bandgap of ~2.78 eV. The valence-band maximum (VBM) locates at the Γ point, as illustrated by angle-resolved photoemission spectroscopy (ARPES), below which three hole-type bands with parabolic dispersion can be identified. The successful synthesis of monolayer MnTe2 film provides a new platform to investigate the 2D magnetism.

关键词: molecular beam epitaxy, hexagonal MnTe2, band structure

Abstract: Monolayer MnTe2 stabilized as 1T structure has been theoretically predicted to be a two-dimensional (2D) ferromagnetic metal and can be tuned via strain engineering. There is no naturally van der Waals (vdW) layered MnTe2 bulk, leaving mechanical exfoliation impossible to prepare monolayer MnTe2. Herein, by means of molecular beam epitaxy (MBE), we successfully prepared monolayer hexagonal MnTe2 on Si(111) under Te rich condition. Sharp reflection high-energy electron diffraction (RHEED) and low-energy electron diffraction (LEED) patterns suggest the monolayer is atomically flat without surface reconstruction. The valence state of Mn4+ and the atom ratio of ([Te]:[Mn]) further confirm the MnTe2 compound. Scanning tunneling spectroscopy (STS) shows the hexagonal MnTe2 monolayer is a semiconductor with a large bandgap of ~2.78 eV. The valence-band maximum (VBM) locates at the Γ point, as illustrated by angle-resolved photoemission spectroscopy (ARPES), below which three hole-type bands with parabolic dispersion can be identified. The successful synthesis of monolayer MnTe2 film provides a new platform to investigate the 2D magnetism.

Key words: molecular beam epitaxy, hexagonal MnTe2, band structure

中图分类号:  (Scanning tunneling microscopy (including chemistry induced with STM))

  • 68.37.Ef
73.20.At (Surface states, band structure, electron density of states) 81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)