中国物理B ›› 2021, Vol. 30 ›› Issue (2): 28507-0.doi: 10.1088/1674-1056/abcf41

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  • 收稿日期:2020-08-28 修回日期:2020-11-13 接受日期:2020-12-01 出版日期:2021-01-18 发布日期:2021-01-29

Negative photoconductivity in low-dimensional materials

Boyao Cui(崔博垚)1,2, Yanhui Xing(邢艳辉)1, Jun Han(韩军)1,†, Weiming Lv(吕伟明)2, Wenxing Lv(吕文星)2, Ting Lei(雷挺)2, Yao Zhang(张尧)1, Haixin Ma(马海鑫)1, Zhongming Zeng(曾中明)2,‡, and Baoshun Zhang(张宝顺)2   

  1. 1 Key Laboratory of Opto-electronics Technology, Ministry of Education, Department of Informatics, Beijing University of Technology, Beijing 100124, China; 2 Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • Received:2020-08-28 Revised:2020-11-13 Accepted:2020-12-01 Online:2021-01-18 Published:2021-01-29
  • Contact: †Corresponding author. E-mail: hanjun@bjut.edu.cn ‡Corresponding author. E-mail: zmzeng2012@sinano.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61574011 and 51761145025), the Key Program of the National Natural Science Foundation of China (Grant No. No.61731019), and the Natural Science Foundation of Beijing, China (Grant Nos. 4182015 and 4182014).

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Abstract: In recent years, low-dimensional materials have received extensive attention in the field of electronics and optoelectronics. Among them, photoelectric devices based on photoconductive effect in low-dimensional materials have a broad development space. In contrast to positive photoconductivity, negative photoconductivity (NPC) refers to a phenomenon that the conductivity decreases under illumination. It has novel application prospects in the field of optoelectronics, memory, and gas detection, etc. In this paper, we review reports about the NPC effect in low-dimensional materials and systematically summarize the mechanisms to form the NPC effect in existing low-dimensional materials.

Key words: negative photoconductivity, low-dimensional materials, optoelectronic devices

中图分类号:  (Optoelectronic devices)

  • 85.60.-q
85.60.Gz (Photodetectors (including infrared and CCD detectors))