Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor

doi:10.1088/1674-1056/ab8a34

中国物理B ›› 2020, Vol. 29 ›› Issue (9): 96701-096701.doi: 10.1088/1674-1056/ab8a34

Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor

He Guan(关赫), Cheng-Yu Jiang(姜成语), Shao-Xi Wang(王少熙)

Northwestern Polytechnical University, Xi'an 710072, China

收稿日期:2020-03-12 修回日期:2020-04-17 接受日期:1900-01-01 出版日期:2020-09-05 发布日期:2020-09-05
通讯作者: He Guan E-mail:he.guan@nwpu.edu.cn

Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor

He Guan(关赫), Cheng-Yu Jiang(姜成语), Shao-Xi Wang(王少熙)

Northwestern Polytechnical University, Xi'an 710072, China

Received:2020-03-12 Revised:2020-04-17 Accepted:1900-01-01 Online:2020-09-05 Published:2020-09-05
Contact: He Guan E-mail:he.guan@nwpu.edu.cn

摘要/Abstract

摘要： HfAlO/InAlAs metal-oxide-semiconductor capacitor (MOS capacitor) is considered as the most popular candidate of the isolated gate of InAs/AlSb high electron mobility transistor (HEMT). In order to improve the performance of the HfAlO/InAlAs MOS-capacitor, samples are annealed at different temperatures for investigating the HfAlO/InAlAs interfacial characyeristics and the device's electrical characteristics. We find that as annealing temperature increases from 280 ℃ to 480 ℃, the surface roughness on the oxide layer is improved. A maximum equivalent dielectric constant of 8.47, a minimum equivalent oxide thickness of 5.53 nm, and a small threshold voltage of -1.05 V are detected when being annealed at 380 ℃; furthermore, a low interfacial state density is yielded at 380 ℃, and this can effectively reduce the device leakage current density to a significantly low value of 1×10^-7 A/cm² at 3-V bias voltage. Therefore, we hold that 380 ℃ is the best compromised annealing temperature to ensure that the device performance is improved effectively. This study provides a reliable conceptual basis for preparing and applying HfAlO/InAlAs MOS-capacitor as the isolated gate on InAs/AlSb HEMT devices.

关键词: HfAlO/InAlAs MOS-capacitor, annealing temperature, interface, leakage current

Abstract: HfAlO/InAlAs metal-oxide-semiconductor capacitor (MOS capacitor) is considered as the most popular candidate of the isolated gate of InAs/AlSb high electron mobility transistor (HEMT). In order to improve the performance of the HfAlO/InAlAs MOS-capacitor, samples are annealed at different temperatures for investigating the HfAlO/InAlAs interfacial characyeristics and the device's electrical characteristics. We find that as annealing temperature increases from 280 ℃ to 480 ℃, the surface roughness on the oxide layer is improved. A maximum equivalent dielectric constant of 8.47, a minimum equivalent oxide thickness of 5.53 nm, and a small threshold voltage of -1.05 V are detected when being annealed at 380 ℃; furthermore, a low interfacial state density is yielded at 380 ℃, and this can effectively reduce the device leakage current density to a significantly low value of 1×10^-7 A/cm² at 3-V bias voltage. Therefore, we hold that 380 ℃ is the best compromised annealing temperature to ensure that the device performance is improved effectively. This study provides a reliable conceptual basis for preparing and applying HfAlO/InAlAs MOS-capacitor as the isolated gate on InAs/AlSb HEMT devices.

Key words: HfAlO/InAlAs MOS-capacitor, annealing temperature, interface, leakage current

中图分类号: (Interfaces)

67.30.hp

68.37.-d (Microscopy of surfaces, interfaces, and thin films) 61.72.uj (III-V and II-VI semiconductors)

关赫, 姜成语, 王少熙. Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor[J]. 中国物理B, 2020, 29(9): 96701-096701.

He Guan(关赫), Cheng-Yu Jiang(姜成语), Shao-Xi Wang(王少熙). Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor[J]. Chin. Phys. B, 2020, 29(9): 96701-096701.

参考文献 26

[1]	Moschetti G, Wadefalk N and Nilsson P A 2011 Solid State Electron. 64 47 doi: 10.1016/j.sse.2011.06.048
[2]	Haddadi A, Chevallier R and Dehzangi A 2017 Appl. Phys. Lett. 110 101
[3]	Guan H, Lv H L, Guo H and Zhang Y M 2015 J. Appl. Phys. 118 195702 doi: 10.1063/1.4935542
[4]	Malmkvist M, Lefebvre E, Borg M, Desplanque L, Wallart X and Dambrine G 2018 IEEE Trans. Microwave Theory & Tech. 56 2685 doi: Trans. Microwave Theory
[5]	Guan H and Guo H 2017 Chin. Phys. B 26 058501 doi: 10.1088/1674-1056/26/5/058501
[6]	Moschetti G, Wadefalk N and Nilsson P A 2012 IEEE Microwave & Wireless Compon. Lett. 22 144 doi: Microwave
[7]	Cui X R and Lv H L 2018 J. Infrared & Millimeter Waves 37 385 doi: frared
[8]	Hashizume T, Ootomo S and Inagaki T 2003 J. Vac. Sci. Technol. B 21 1828 doi: 10.1116/1.1585077
[9]	Guan H and Lv H L 2018 Thin Solid Film 661 137 doi: 10.1016/j.tsf.2018.07.009
[10]	Wu L F, Zhang Y M and Lv H L 2015 Jpn. J. Appl. Phys. 54 110303 doi: 10.7567/JJAP.54.110303
[11]	Liu L N, Choi H W, Xu J P and Tang W M 2007 IEEE Trans. Electron Dev. 65 72
[12]	Jin C J, Lv H L, Zhang Y M and Guan H 2016 Thin Solid Films 619 48 doi: 10.1016/j.tsf.2016.10.019
[13]	Mikhelashvili V, Meyler B and Shneider J 2005 Microelectron. Reliab. 45 933 doi: 10.1016/j.microrel.2004.11.022
[14]	Gao J, He G and Liu M 2017 J. Alloys Compd. 691 504 doi: 10.1016/j.jallcom.2016.08.289
[15]	Jin C J, Lv H L, Zhang Y M and Guan H 2016 Solid-State Electron. 123 106 doi: 10.1016/j.sse.2016.06.006
[16]	Lin Y C, Trinh H D and Chuang T W 2013 IEEE Electron Dev. Lett. 34 1229 doi: 10.1109/LED.2013.2272083
[17]	Trinh H, Lin Y, Wang H, Chang C, Kakushima K and Iwai H 2012 Appl. Phys. Express 5 1104
[18]	Altuntas H, Donmez I, Ozgit-Akgun C and Biyikli N 2014 J. Vac. Sci. Technol. A 32 041504 doi: 10.1116/1.4875935
[19]	Liu C, Zhang Y M, Zhang Y M and Lv H L 2014 J. Appl. Phys. 116 142101
[20]	Maleev N A, Bobrov M A, Kuzmenkov A G, Vasil'Ev A P and Kulagina M M 2018 Tech. Phys. Lett. 44 862 doi: 10.1134/S1063785018100103
[21]	Asif M, Chen C, Peng D, Xi W and Zhi J 2018 Solid State Electron. 142 36 doi: 10.1016/j.sse.2018.02.001
[22]	Guan H and Jing C Y 2018 Coating 8 417 doi: 10.3390/coatings8120417
[23]	Brennan B, Galatage R V and Thomas K 2013 J. Appl. Phys. 114 317
[24]	Inci D, Cagla O and Necmi B 2013 J. Vac. Sci. Technol. A 31 01A110
[25]	Guan H, Lv H L, Guo H, Zhang Y M, Zhang Y M and Wu L F 2015 Chin. Phys. B 24 126701 doi: 10.1088/1674-1056/24/12/126701
[26]	Terman L M 1962 Solid State Electron. 5 285 doi: 10.1016/0038-1101(62)90111-9

Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor

Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 26

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Yuan Liu(刘源), Zhongran Liu(刘中然), Meng Zhang(张蒙), Yanqiu Sun(孙艳秋), He Tian(田鹤), and Yanwu Xie(谢燕武). Superconductivity in epitaxially grown LaVO₃/KTaO₃(111) heterostructures[J]. 中国物理B, 2023, 32(3): 37305-037305.
[2]	Shao-Yong Huo(霍绍勇), Long-Chao Yao(姚龙超), Kuan-Hong Hsieh(谢冠宏), Chun-Ming Fu(符纯明), Shih-Chia Chiu(邱士嘉), Xiao-Chao Gong(龚小超), and Jian Deng(邓健). Tunable topological interface states and resonance states of surface waves based on the shape memory alloy[J]. 中国物理B, 2023, 32(3): 34303-034303.
[3]	Caixia Zhang(张彩霞), Yaling Li(李雅玲), Beibei Lin(林蓓蓓), Jianlong Tang(唐建龙), Quanzhen Sun(孙全震), Weihao Xie(谢暐昊), Hui Deng(邓辉), Qiao Zheng(郑巧), and Shuying Cheng(程树英). Micro-mechanism study of the effect of Cd-free buffer layers ZnXO (X=Mg/Sn) on the performance of flexible Cu₂ZnSn(S, Se)⁴ solar cell[J]. 中国物理B, 2023, 32(2): 28801-028801.
[4]	Ningjing Yang(杨柠境), Hai Yang(杨海), and Guojun Jin(金国钧). Interface-induced topological phase and doping-modulated bandgap of two-dimensioanl graphene-like networks[J]. 中国物理B, 2023, 32(1): 17201-017201.
[5]	Jing Yue(岳靖), Jian Li(李剑), Wen Zhang(张文), and Zhangxin Chen(陈掌星). The coupled deep neural networks for coupling of the Stokes and Darcy-Forchheimer problems[J]. 中国物理B, 2023, 32(1): 10201-010201.
[6]	Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique[J]. 中国物理B, 2022, 31(9): 97401-097401.
[7]	Jianfei Chen(陈健菲), Chaohua Wu(吴超华), Jingtao Fan(樊景涛), and Gang Chen(陈刚). Characterization of topological phase of superlattices in superconducting circuits[J]. 中国物理B, 2022, 31(8): 88501-088501.
[8]	Zeng-Ping Su(苏增平), Tong-Tong Wei(魏彤彤), and Yue-Ke Wang(王跃科). Dual-channel tunable near-infrared absorption enhancement with graphene induced by coupled modes of topological interface states[J]. 中国物理B, 2022, 31(8): 87804-087804.
[9]	Zhuo-Cheng Hong(洪卓呈), Pei Yao(姚佩), Yang Liu(刘杨), and Xu Zuo(左旭). First-principles calculations of the hole-induced depassivation of SiO₂/Si interface defects[J]. 中国物理B, 2022, 31(5): 57101-057101.
[10]	Ling-Mei Zhang(张令梅), Yuan-Yuan Miao(苗圆圆), Zhi-Peng Cao(曹智鹏), Shuai Qiu(邱帅), Guang-Ping Zhang(张广平), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎), and Gui-Chao Hu(胡贵超). Bias-induced reconstruction of hybrid interface states in magnetic molecular junctions[J]. 中国物理B, 2022, 31(5): 57303-057303.
[11]	Juewen Fan(范珏雯), Bingyan Jiang(江丙炎), Jiaji Zhao(赵嘉佶), Ran Bi(毕然), Jiadong Zhou(周家东), Zheng Liu(刘政), Guang Yang(杨光), Jie Shen(沈洁), Fanming Qu(屈凡明), Li Lu(吕力), Ning Kang(康宁), and Xiaosong Wu(吴孝松). Asymmetric Fraunhofer pattern in Josephson junctions from heterodimensional superlattice V₅S₈[J]. 中国物理B, 2022, 31(5): 57402-057402.
[12]	Yutao Liu(刘玉涛), Tinghong Gao(高廷红), Yue Gao(高越), Lianxin Li(李连欣), Min Tan(谭敏), Quan Xie(谢泉), Qian Chen(陈茜), Zean Tian(田泽安), Yongchao Liang(梁永超), and Bei Wang(王蓓). Evolution of defects and deformation mechanisms in different tensile directions of solidified lamellar Ti-Al alloy[J]. 中国物理B, 2022, 31(4): 46105-046105.
[13]	Hong-Yu Guo(郭宏宇), Tao Cheng(程涛), Jing Li(李景), and Ying-Jun Li(李英骏). Effect of initial phase on the Rayleigh—Taylor instability of a finite-thickness fluid shell[J]. 中国物理B, 2022, 31(3): 35203-035203.
[14]	Zhi-Gang Wang(汪志刚), Yun-Feng Gong(龚云峰), and Zhuang Liu(刘壮). Modeling of high permittivity insulator structure with interface charge by charge compensation[J]. 中国物理B, 2022, 31(2): 28501-028501.
[15]	Xue Zhao(赵雪) and Jin-Wu Jiang(江进武). Solid-gas interface thermal conductance for the thermal barrier coating with surface roughness: The confinement effect[J]. 中国物理B, 2022, 31(12): 126802-126802.