Stress and strain analysis of Si-based Ⅲ-V template fabricated by ion-slicing

doi:10.1088/1674-1056/ab8a35

中国物理B ›› 2020, Vol. 29 ›› Issue (7): 77303-077303.doi: 10.1088/1674-1056/ab8a35

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Stress and strain analysis of Si-based Ⅲ-V template fabricated by ion-slicing

Shuyan Zhao(赵舒燕), Yuxin Song(宋禹忻), Hao Liang(梁好), Tingting Jin(金婷婷), Jiajie Lin(林家杰), Li Yue(岳丽), Tiangui You(游天桂), Chang Wang(王长), Xin Ou(欧欣), Shumin Wang(王庶民)

1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049 China;
3 Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296, Sweden

收稿日期:2020-03-03 修回日期:2020-03-26 出版日期:2020-07-05 发布日期:2020-07-05
通讯作者: Xin Ou, Shumin Wang E-mail:ouxin@mail.sim.ac.cn;shumin@chalmers.se
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFE0131300)， the National Natural Science Foundation of China (Grant Nos. U1732268, 61874128, 11622545, 61851406, 11705262, and 61804157), the Frontier Science Key Program of the Chinese Academy of Sciences (Grant No. QYZDY-SSW-JSC032), the Chinese-Austrian Cooperative Research and Development Project (Grant No. GJHZ201950), the Science and Technology Innovation Action Plan Program of Shanghai, China (Grant No. 17511106202), the Program of Shanghai Academic Research Leader, China (Grant No. 19XD1404600), the Sailing Program of Shanghai, China (Grant Nos. 19YF1456200 and 19YF1456400), and the K C Wong Education Foundation (Grant No. GJTD-2019-11).

Stress and strain analysis of Si-based Ⅲ-V template fabricated by ion-slicing

Shuyan Zhao(赵舒燕)^1,2, Yuxin Song(宋禹忻)¹, Hao Liang(梁好)^1,2, Tingting Jin(金婷婷)^1,2, Jiajie Lin(林家杰)^1,2, Li Yue(岳丽)^1,2, Tiangui You(游天桂)^1,2, Chang Wang(王长)^1,2, Xin Ou(欧欣)^1,2, Shumin Wang(王庶民)^1,2,3

1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049 China;
3 Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296, Sweden

Received:2020-03-03 Revised:2020-03-26 Online:2020-07-05 Published:2020-07-05
Contact: Xin Ou, Shumin Wang E-mail:ouxin@mail.sim.ac.cn;shumin@chalmers.se
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFE0131300)， the National Natural Science Foundation of China (Grant Nos. U1732268, 61874128, 11622545, 61851406, 11705262, and 61804157), the Frontier Science Key Program of the Chinese Academy of Sciences (Grant No. QYZDY-SSW-JSC032), the Chinese-Austrian Cooperative Research and Development Project (Grant No. GJHZ201950), the Science and Technology Innovation Action Plan Program of Shanghai, China (Grant No. 17511106202), the Program of Shanghai Academic Research Leader, China (Grant No. 19XD1404600), the Sailing Program of Shanghai, China (Grant Nos. 19YF1456200 and 19YF1456400), and the K C Wong Education Foundation (Grant No. GJTD-2019-11).

摘要/Abstract

摘要： Strain and stress were simulated using finite element method (FEM) for three Ⅲ-V-on-Insulator (Ⅲ-VOI) structures, i.e., InP/SiO₂/Si, InP/Al₂O₃/SiO₂/Si, and GaAs/Al₂O₃/SiO₂/Si, fabricated by ion-slicing as the substrates for optoelectronic devices on Si. The thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam epitaxy. Structures grown on GaAsOI are more dangerous than those on InPOI due to a limited critical thickness. The intermedia Al₂O₃ layer was intended to increase the adherence while it brings in the largest risk. The simulated results reveal thermal stress on Al₂O₃ over 1 GPa, which is much higher than its critical stress for interfacial fracture. InPOI without an Al₂O₃ layer is more suitable as the substrate for optoelectronic integration on Si.

关键词: Ⅲ-VOI template, finite element method (FEM), critical thickness

Abstract: Strain and stress were simulated using finite element method (FEM) for three Ⅲ-V-on-Insulator (Ⅲ-VOI) structures, i.e., InP/SiO₂/Si, InP/Al₂O₃/SiO₂/Si, and GaAs/Al₂O₃/SiO₂/Si, fabricated by ion-slicing as the substrates for optoelectronic devices on Si. The thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam epitaxy. Structures grown on GaAsOI are more dangerous than those on InPOI due to a limited critical thickness. The intermedia Al₂O₃ layer was intended to increase the adherence while it brings in the largest risk. The simulated results reveal thermal stress on Al₂O₃ over 1 GPa, which is much higher than its critical stress for interfacial fracture. InPOI without an Al₂O₃ layer is more suitable as the substrate for optoelectronic integration on Si.

Key words: Ⅲ-VOI template, finite element method (FEM), critical thickness

中图分类号: (Semiconductor-insulator-semiconductor structures)

73.40.Ty

02.70.Dh (Finite-element and Galerkin methods) 62.20.-x (Mechanical properties of solids)

赵舒燕, 宋禹忻, 梁好, 金婷婷, 林家杰, 岳丽, 游天桂, 王长, 欧欣, 王庶民. Stress and strain analysis of Si-based Ⅲ-V template fabricated by ion-slicing[J]. 中国物理B, 2020, 29(7): 77303-077303.

Shuyan Zhao(赵舒燕), Yuxin Song(宋禹忻), Hao Liang(梁好), Tingting Jin(金婷婷), Jiajie Lin(林家杰), Li Yue(岳丽), Tiangui You(游天桂), Chang Wang(王长), Xin Ou(欧欣), Shumin Wang(王庶民). Stress and strain analysis of Si-based Ⅲ-V template fabricated by ion-slicing[J]. Chin. Phys. B, 2020, 29(7): 77303-077303.

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Stress and strain analysis of Si-based Ⅲ-V template fabricated by ion-slicing

Stress and strain analysis of Si-based Ⅲ-V template fabricated by ion-slicing

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