Influence of Zr50Cu50 thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films

doi:10.1088/1674-1056/ab6c50

中国物理B ›› 2020, Vol. 29 ›› Issue (3): 37303-037303.doi: 10.1088/1674-1056/ab6c50

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Influence of Zr₅₀Cu₅₀ thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films

Bao-Qing Zhang(张宝庆), Gao-Peng Liu(刘高鹏), Hai-Tao Zong(宗海涛), Li-Ge Fu(付丽歌), Zhi-Fei Wei(魏志飞), Xiao-Wei Yang(杨晓炜), Guo-Hua Cao(曹国华)

1 School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China;
2 School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China

收稿日期:2019-12-29 修回日期:2020-01-10 出版日期:2020-03-05 发布日期:2020-03-05
通讯作者: Hai-Tao Zong, Guo-Hua Cao E-mail:haitaozong@163.com;ghcao@hpu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51571085), the Key Science and Technology Program of Henan Province, China (Grant No. 19212210210), the Foundation of Henan Educational Committee, China (Grant No. 13B430019), and the Henan Postdoctoral Science Foundation, China.

Influence of Zr₅₀Cu₅₀ thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films

Bao-Qing Zhang(张宝庆)¹, Gao-Peng Liu(刘高鹏)¹, Hai-Tao Zong(宗海涛)², Li-Ge Fu(付丽歌)², Zhi-Fei Wei(魏志飞)¹, Xiao-Wei Yang(杨晓炜)¹, Guo-Hua Cao(曹国华)²

1 School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China;
2 School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China

Received:2019-12-29 Revised:2020-01-10 Online:2020-03-05 Published:2020-03-05
Contact: Hai-Tao Zong, Guo-Hua Cao E-mail:haitaozong@163.com;ghcao@hpu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51571085), the Key Science and Technology Program of Henan Province, China (Grant No. 19212210210), the Foundation of Henan Educational Committee, China (Grant No. 13B430019), and the Henan Postdoctoral Science Foundation, China.

摘要/Abstract

摘要： Aluminum-doped ZnO (AZO) thin films with thin film metallic glass of Zr₅₀Cu₅₀ as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature on structural, optical, and electrical properties of AZO thin film are investigated. Increasing the thickness of buffer layer and substrate temperature can both promote the transformation of AZO from amorphous to crystalline structure, while they show (100) and (002) unique preferential orientations, respectively. After inserting Zr₅₀Cu₅₀ layer between the glass substrate and AZO film, the sheet resistance and visible transmittance decrease, but the infrared transmittance increases. With substrate temperature increasing from 25 ℃ to 520 ℃, the sheet resistance of AZO(100 nm)/ Zr₅₀Cu₅₀(4 nm) film first increases and then decreases, and the infrared transmittance is improved. The AZO(100 nm)/Zr₅₀Cu₅₀(4 nm) film deposited at a substrate temperature of 360 ℃ exhibits a low sheet resistance of 26.7 Ω/□, high transmittance of 82.1% in the visible light region, 81.6% in near-infrared region, and low surface roughness of 0.85 nm, which are useful properties for their potential applications in tandem solar cell and infrared technology.

关键词: aluminum-doped ZnO (AZO), Zr₅₀Cu₅₀, thin film metallic glass, optoelectrical properties, morphology

Abstract: Aluminum-doped ZnO (AZO) thin films with thin film metallic glass of Zr₅₀Cu₅₀ as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature on structural, optical, and electrical properties of AZO thin film are investigated. Increasing the thickness of buffer layer and substrate temperature can both promote the transformation of AZO from amorphous to crystalline structure, while they show (100) and (002) unique preferential orientations, respectively. After inserting Zr₅₀Cu₅₀ layer between the glass substrate and AZO film, the sheet resistance and visible transmittance decrease, but the infrared transmittance increases. With substrate temperature increasing from 25 ℃ to 520 ℃, the sheet resistance of AZO(100 nm)/ Zr₅₀Cu₅₀(4 nm) film first increases and then decreases, and the infrared transmittance is improved. The AZO(100 nm)/Zr₅₀Cu₅₀(4 nm) film deposited at a substrate temperature of 360 ℃ exhibits a low sheet resistance of 26.7 Ω/□, high transmittance of 82.1% in the visible light region, 81.6% in near-infrared region, and low surface roughness of 0.85 nm, which are useful properties for their potential applications in tandem solar cell and infrared technology.

Key words: aluminum-doped ZnO (AZO), Zr₅₀Cu₅₀, thin film metallic glass, optoelectrical properties, morphology

中图分类号: (Multilayers)

73.21.Ac

42.70.-a (Optical materials) 68.55.-a (Thin film structure and morphology)

张宝庆, 刘高鹏, 宗海涛, 付丽歌, 魏志飞, 杨晓炜, 曹国华. Influence of Zr₅₀Cu₅₀ thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films[J]. 中国物理B, 2020, 29(3): 37303-037303.

Bao-Qing Zhang(张宝庆), Gao-Peng Liu(刘高鹏), Hai-Tao Zong(宗海涛), Li-Ge Fu(付丽歌), Zhi-Fei Wei(魏志飞), Xiao-Wei Yang(杨晓炜), Guo-Hua Cao(曹国华). Influence of Zr₅₀Cu₅₀ thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films[J]. Chin. Phys. B, 2020, 29(3): 37303-037303.

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Influence of Zr₅₀Cu₅₀ thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films

Influence of Zr₅₀Cu₅₀ thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films

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