Fullerene-based electrode interlayers for bandgap tunable organometal perovskite metal-semiconductor-metal photodetectors

doi:10.1088/1674-1056/28/4/047804

中国物理B ›› 2019, Vol. 28 ›› Issue (4): 47804-047804.doi: 10.1088/1674-1056/28/4/047804

所属专题： SPECIAL TOPIC — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Fullerene-based electrode interlayers for bandgap tunable organometal perovskite metal-semiconductor-metal photodetectors

Wen Luo(罗文), Li-Zhi Yan(闫立志), Rong Liu(刘荣), Tao-Yu Zou(邹涛隅), Hang Zhou(周航)

School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China

收稿日期:2019-01-10 修回日期:2019-02-27 出版日期:2019-04-05 发布日期:2019-04-05
通讯作者: Hang Zhou E-mail:ruifeng.zhouh81@pkusz.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0202002), the Natural Science Foundation of Guangdong Province, China (Grant No. 2018A030313332), and the Fund from Shenzhen Science and Technology Innovation Commission, China (Grant No. JCYJ20160229122349365, High Sensitivity Perovskite Image Sensor Program).

Fullerene-based electrode interlayers for bandgap tunable organometal perovskite metal-semiconductor-metal photodetectors

Wen Luo(罗文), Li-Zhi Yan(闫立志), Rong Liu(刘荣), Tao-Yu Zou(邹涛隅), Hang Zhou(周航)

School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China

Received:2019-01-10 Revised:2019-02-27 Online:2019-04-05 Published:2019-04-05
Contact: Hang Zhou E-mail:ruifeng.zhouh81@pkusz.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0202002), the Natural Science Foundation of Guangdong Province, China (Grant No. 2018A030313332), and the Fund from Shenzhen Science and Technology Innovation Commission, China (Grant No. JCYJ20160229122349365, High Sensitivity Perovskite Image Sensor Program).

摘要/Abstract

摘要：

Perovskite photoconductor-type photodetector with metal-semiconductor-metal (MSM) structure is a basic device for photodetection applications. However, the role of electrode interlayer in MSM-type perovskite devices is less investigated compared to that of the pin diode structure. Here, a systematic investigation on the influence of phenyl-C₆₁-butyric acid methyl ester (PCBM) and indene-C₆₀ bisadduct (ICBA) interfacial layers for MSM perovskite photodetectors is reported. It is found that the fullerene-based interlayer significantly enhances the photocurrent of the MSM photodetectors. On one hand, the PCBM interlayer is more suitable for CH₃NH₃PbI₃ photodetector, with the responsivity two times higher than that of the device with ICBA interlayer. The ICBA layer, on the other hand, becomes more effective when the band gap of perovskite is enlarged with bromine composition, denoted as CH₃NH₃Pb(I_1-xBr_x)₃ (0 ≤ x ≤ 1). It is further found that the specific detectivity of photodetectors with ICBA interlayer becomes even higher than those with PCBM when the bromine compositional percentage reaches 0.6 (x > 0.6).

关键词: interlayer, perovskite, photodetectors

Abstract:

Key words: interlayer, perovskite, photodetectors

中图分类号: (Photoconduction and photovoltaic effects)

78.56.-a

78.66.Db (Elemental semiconductors and insulators) 78.66.Sq (Composite materials) 78.66.Tr (Fullerenes and related materials)

罗文, 闫立志, 刘荣, 邹涛隅, 周航. Fullerene-based electrode interlayers for bandgap tunable organometal perovskite metal-semiconductor-metal photodetectors[J]. 中国物理B, 2019, 28(4): 47804-047804.

Wen Luo(罗文), Li-Zhi Yan(闫立志), Rong Liu(刘荣), Tao-Yu Zou(邹涛隅), Hang Zhou(周航). Fullerene-based electrode interlayers for bandgap tunable organometal perovskite metal-semiconductor-metal photodetectors[J]. Chin. Phys. B, 2019, 28(4): 47804-047804.

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Fullerene-based electrode interlayers for bandgap tunable organometal perovskite metal-semiconductor-metal photodetectors

Fullerene-based electrode interlayers for bandgap tunable organometal perovskite metal-semiconductor-metal photodetectors

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